• Title/Summary/Keyword: Cu and Sn

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Characterization of Atomic-Layer Deposited ZnSnO Buffer Layer for 18%- Efficiency Cu(In,Ga)Se2 Solar Cells (18% 효율 Cu(In,Ga)Se2 박막태양전지용 ZnSnO 버퍼층의 원자층 증착법 및 분석)

  • Kim, Sun Cheul;Kim, Seung Tae;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.3 no.2
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    • pp.54-60
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    • 2015
  • ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

Improvement of the shieldability and lightweight of a radiation protective apron (방사선 방호용 에이프런의 경량화와 차폐능 개선)

  • Kim, Young-Keun;Jang, Young-Ill;Kim, Jung-Min
    • Journal of radiological science and technology
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    • v.26 no.1
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    • pp.45-50
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    • 2003
  • In this work, we characterized the shieldability and lightweight of radiation protective aprons which were consisted of various metal(Pb, Sn, Ni, Ti and Cu) by measuring the x-ray dose transmitted through the filters. The transmitted ratio and lead equivalent of various metal were obtained by linear interpolation and the lead equivalent of double layered filters contained Pb layer was determined. The transmitted ratio of the apron(0.25 mmPb) specified in KS B 0845 was 5.2%. The transmitted ratio of the filters at the thickness of 0.6 mm was decreased in the other of Ni(32.60%), Ti(17.75%), Cu(13.25%) and Sn(3.84%). From the results of experimental evaluation for combined filter of Pb and Sn, it was founded that in the case of the first Sn layer, the lead equivalent was higher than that of the first Pb layer. The lead equivalent corresponding to apron of 0.25 mmPb was obtained in the double layered filters of Sn(0.19 mm) - Pb(0.1 mm) and Pb(0.1 mm) - Sn(0.37 mm). Thus, the Sn-Pb filter had the lower weight about 13% than apron of 0.25 mmPb.

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Study on the Prediction of Fatigue Life of BGA Typed Solder Joints (BGA 형태 솔더 접합부의 피로 수명 예측에 관한 연구)

  • Kim, Seong-Keol;Kim, Joo-Young
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.17 no.1
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    • pp.137-143
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    • 2008
  • Thermal fatigue life prediction for solder joints becomes the most critical issue in present microelectronic packaging industry. And lead-free solder is quickly becoming a reality in electronic manufacturing fields. This trend requires life prediction models for new solder alloy systems. This paper describes the life prediction models for SnAgCu and SnPb solder joints, based upon non-linear finite element analysis (FEA). In case of analyses of the SnAgCu solder joints, two kinds of shapes are used. As a result, it is found that the SnAgCu solder has longer fatigue life than the SnPb solder in temperature cycling analyses.

Effect of sulfur addition on Cu2ZnSnSe4 thin film by Pulsed Laser Deposition (PLD를 이용한 CZTS의 박막의 S 첨가의 영향)

  • Jang, Yun-Jung;Amal, M. Ikhlasul;Alfaruqy, M. Hilmy;Kim, Kyoo Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.86.1-86.1
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    • 2010
  • Cu2ZnSnSe4는 CIS 태양전지의 In 대체 물질계로 주목을 받고 있는 저가형 태양전지 재료로 장차 차세대 태양전지 재료로 응용이 기대되고 있다. 그러나 에너지 밴드갭이 0.9~1.1eV로 다소 낮아 태양전지 광흡수층 재료로 사용하기 위해서는 wide band gab화 처리가 필요하다. 본 연구에서는 CZTSe에 S를 첨가하여 에너지 밴드갭을 확장하고자 하며, S의 첨가가 CZTSe 박막의 특성에 미치는 영향에 대하여 조사하였다. 실험의 편의성을 도모하고자 펄스레이저 법을 사용하여 증착하였다. 박막 조성 제어에는 Cu, Zn, Sn, Se, S 분말을 볼밀로 분쇄, 혼합하여 균질 혼합상 프리커서를 제조하고 이를 Cold Isostatic Press(CIP) 성형하여 Source target을 사용하였다. Pulsed YAG-Laser를 사용하여 soda lime glass상에 증착하고 조성, 구조, 조직을 관찰하고 에너지 밴드갭, 광흡수계수, 면저항, 전하밀도 등 특성을 조사하였다.

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Fabrication of fine Sn-0.7wt%Cu Solder Bump Formed by Electroplating (전해도금을 이용한 Sn-0.7wt%Cu 초미세 솔더 범프의 형성)

  • Lee, Gi-Ju;Lee, Hui-Yeol;Jeon, Ji-Heon;Kim, In-Hui;Jeong, Jae-Pil
    • Proceedings of the KWS Conference
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    • 2007.11a
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    • pp.227-228
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    • 2007
  • 본 연구에서는 플립칩 범프를 형성하는 여러 가지 방법 중 전해도금을 이용하여 Sn-0.7wt%Cu 솔더 범프를 형성 하고자 하였다. 전류밀도에 따른 전류 효율을 알아보기 위하여 전류밀도에 따른 실험적 증착 속도와 이론적 속도를 비교 분석 하였다. 도금 두께는 FE-SEM(Field Emission Scanning Electron Microscope)을 이용하여 측정 하였으며 최종적으로 $20{\mu}m{\times}20{\mu}m{\times}10{\mu}m$ 크기에 $50{\mu}m$ 피치를 가지는 straight wall 형 Sn-0.7wt%Cu 솔더 범프를 형성하고자 하였다.

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