• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.141-145
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• 2001

Sn-3.5Ag 무연 솔더에 Cu를 첨가한 3원계 합금을 만든 후 압연과 열처리한 후 크리프 특성을 연구하였다. 모든 솔더 합금에서 1차 크리프는 거의 관찰되지 않았으며, 2차와 3차 크리프가 대부분을 차지하였고, 최소 크리프 변형율은 Cu 함량이 0.75 wt %에서 최소이었고, 응력 지수는 약 4이었으며, 파단 시간 또한 0.75 wt% Cu에서 가장 길었다. 크리프 기구는 격자 확산에 의한 전위의 상승과 전위 활주에 의한 고온 크리프임을 앞 수 있었으며, Cu의 첨가는 1 wt% 가지 연성에 큰 영향을 주지 않았으나, 1.5 wt% 첨가했을 경우 연성은 크게 감소하였다.

• Journal of Welding and Joining
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• v.30 no.2
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• pp.65-69
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• 2012

Environmental and health concerns over the lead have led to investigation of the alternative Pb-free solders to replace commonly used Pb-Sn solders in microelectronic packaging application. The leading candidates for lead-free solder alloys are presently the near eutectic Sn-Ag-Cu alloys. Therefore, extensive studies on reliability related with the composition have been reported. However, the insufficient drop property of the near eutectic Sn-Ag-Cu alloys has demanded solder compositions of low Ag content. In addition, the solder interconnections in automobile applications like a smart box require significantly improved vibration resistance. Therefore, this study investigated the effect of alloying elements (Ag, Bi, In) on the vibration fatigue strength. The vibration fatigue was conducted in 10~1000Hz frequency and 20Grms. The interface of the as-soldered cross section close to the Cu pad indicated the intermetallic compound ($Cu_6Sn_5$) regardless of solder composition. The type and thickness of IMC was not significantly changed after the vibration test. It indicates that no thermal activities occurred significantly during vibration. Furthermore, as a function of alloying composition, the vibration crack path was investigated with a focus on the IMCs. Vibration crack was initiated from the fillet surface of the heel for QFP parts and from the plating layer of chip parts. Regardless of the solder composition, the crack during a vibration test was propagated as same as that during a thermal fatigue test.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.68-73
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• 2020

Due to its favorable optical properties, Cu₂SnS₃ (CTS) is a promising material for thin film solar cells. Doping, which modifies the absorber properties, is one way to improve the conversion efficiency of CTS solar cells. In this work, CTS solar cells with selenium doping were fabricated on a flexible substrate using sputtering method and the effect of doping on the properties of CTS solar cells was investigated. In XRD analysis, a shift in the CTS peaks can be observed due to the doped selenium. XRF analysis confirmed the different ratios of Cu/Sn and (S+Se)/(Cu+Sn) depending on the amount of selenium doping. Selenium doping can help to lower the chemical potential of sulfur. This effectively reduces the point defects of CTS thin films. Overall improved electrical properties were observed in the CTS solar cell with a small amount of selenium doping, and a notable conversion efficiency of 1.02 % was achieved in the CTS solar cell doped with 1 at% of selenium.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• Proceedings of the KWS Conference
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• v.43
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• pp.25-27
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• 2004

• Proceedings of the KWS Conference
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• 2000.10a
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• pp.281-283
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• 2000

• Proceedings of the KWS Conference
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• 1997.10a
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• pp.110-111
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• 1997

• Proceedings of the KWS Conference
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• 1999.05a
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• pp.96-97
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.110-110
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• 2001

• Proceedings of the KWS Conference
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• 2001.05a
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• pp.271-272
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• 2001