• Title/Summary/Keyword: Crystallographic properties

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Relaxation and Freezing in Pb-based Relaxer Ferroelectrics (Pb계 완화형 강유전체에서의 relaxation 및 freezing거동)

  • 박재환;김윤호;박재관
    • Korean Journal of Crystallography
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    • v.12 no.3
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    • pp.157-161
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    • 2001
  • The observe relaxation phenomena and freezing behavior in Pb(Mg/sub ⅓/Nb/sub ⅔/O₃, relaxor ferroelectrics, weak electric-field properties as well as strong electric-field properties were investigated. The temperature dependence of the dielectric properties obtained using the low electric-field of 1 V/w was investigated. The dielectric properties obtained from the slope of the dielectric hysteresis loop and the temperature dependence of the pyroelectric properties were also investigated. When fitting all the experimental data with the Vogel-Filcher relation, a close agreement between the experimental data and equation was observed. The freezing temperature could be consistently calculated by the various methods.

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An Analysis of Tribological Properties of Metal Interlayered DLC Films Prepared by PECVD Method (PECVD로 증착된 금속층을 포함하는 DLC 박막의 기계적 특성 분석)

  • Jeon, Young-Sook;Choi, Won-Seok;Hong, Byung-You
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.7
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    • pp.631-635
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    • 2006
  • The properties of metal interlayered DLC films between the Si substrate and the DLC films were studied. DC magnetron sputtering method has been used to deposit intermediate layers of metals. And RF-PECVD method has been employed to synthesize DLC onto substrates of the silicon and metal layers. After we used metal Inter-layers, such as chromium, nickel, titanium and we studied tribological properties of the DLC films. The thickness of films were observed by field emission scanning electron microscope (FE-SEM). Also the surface morphology of the films were observed by an atomic force microscope (AFM). The crystallographic properties of the films were analyzed with X-ray diffraction (XRD), the friction coefficients were investigated by AFM in friction force microscope (FFM) mode. Tribological performances of the films were estimated by nano-indenter, stress tester measurement.

Electrical Properties and Microstructures in Ti Films Deposited by TFT dc Sputtering

  • Han, Chang-Suk;Jeon, Seung-Jin
    • Korean Journal of Materials Research
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    • v.26 no.4
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    • pp.207-211
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    • 2016
  • Ti films were deposited on glass substrates under various preparation conditions in a chamber of two-facing-target type dc sputtering; after deposition, the electric resistivity values were measured using a conventional four-probe method. Crystallographic orientations and microstructures, including the texture and columnar structure, were also investigated for the Ti films. The morphological features, including the columnar structures and surface roughness, are well explained on the basis of Thornton's zone model. The electric resistivity and the thermal coefficient of the resistivity vary with the sputtering gas pressure. The minimum value of resistivity was around 0.4 Pa for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films; the apparent tendencies are almost the same for the two films, with a small difference in resistivity because of the different film thicknesses. The films deposited at high gas pressures show higher resistivities. The maximum of TCR is also around 0.4 Pa, which is the same as that obtained from the relationship between the resistivity and the gas pressure. The lattice spacing also decreases with increasing sputtering gas pressure for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films. Because they are strongly related to the sputtering gas pressures for Ti films that have a crystallographic anisotropy that is different from cubic symmetry, these changes are well explained on the basis of the film microstructures. It is shown that resistivity measurement can serve as a promising monitor for microstructures in sputtered Ti films.

Electric-Field-Induced Lattice Distortion and Related Properties in Relaxor Ferroelectrics (완화형 가유전체에서 전계인가에 따른 격자왜곡과 강유전물성의 상관관계)

  • 박재환;박재관;김윤호
    • Korean Journal of Crystallography
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    • v.12 no.1
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    • pp.14-19
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    • 2001
  • Effects of electric-field-induced lattice distortion on the polarization and strain were investigated in Pb(Mg/sub 1/3/Nb/sub 2/3)O₃ relaxor ferroelectric ceramics in the temperature range of -50℃∼90℃. The ratio of residual strain and polarization (S/sub r//P/sub r/ rarely depends on the temperature. However, the ratio of the electric field included strain and polarization (S/sub induced//P/sub induced/) increased as the temperature decreases below phase transition temperature. To explain these experimental results, a simple rigid ion model concentrating on only Bo/sub 6/ octahedron was suggested.

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Study on the Electrical Properties of Graphite by $TiO_2$ Coating ($TiO_2$ 코팅에 의한 흑연의 전기적 특성연구)

  • 최승도;문흥수;박병규;이태근;김철진;이석근
    • Korean Journal of Crystallography
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    • v.10 no.1
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    • pp.9-12
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    • 1999
  • TiO2로 수열코팅하여 표면 개질한 흑연의 미세구조 및 전기적 특성에 관하여 연구하였다. 수열합성에 의해 코팅된 TiO2는 rutile 상이였고, 흑연의 소결정을 증대하였다. 온도에 따라 흑연의 소결성 및 밀도는 증가하였고, 코팅된 TiO2에 의한 흑연의 산화로 저항은 증가하였고 1100℃ 이상에서는 포화되었다.

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$Bi_4Ge_3O_{12}$ Crystal Growth by Czochralski Method and the Effect of Composition on Optical Properties (쵸크랄스키법에 의한 $Bi_4Ge_3O_{12}$ 단결정 육성 및 화학조성이 광학적 성질에 미치는 영향)

  • 배인국;황진명
    • Korean Journal of Crystallography
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    • v.10 no.1
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    • pp.39-44
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    • 1999
  • 주파수 무선센서에 의한 자동직경제어방식으로 쵸크랄스키법에 의해 Bi4Ge3O12 단결정을 육성하였다. Bi4Ge3O12의 화학양론적 조성으로부터 Bi2O3와 GeO2의 조성비를 변화시키면서 단결정을 육성하였다. 광학적인 투과도 조사결과, 화학양론적 조성에서 가장 우수한 투과도를 나타내었고 과잉의 Bi2O3에서는 투과도가 현저히 낮아졌다. 또한 육성된 단결정의 결함밀도는 ∼1×103/cm2이었다.

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Structure Refinement of $SrAl_{12}O_{19}$ Magnetoplumbite Using Energy Minimization Techniques

  • Park, Jae-Gwan;A.N. Cormack
    • Korean Journal of Crystallography
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    • v.11 no.3
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    • pp.173-175
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    • 2000
  • Computational technique, based on the minimization of the crystal energy with respect to atomic coordinates, are shown to reproduce successfully complex crystal structure, in this case, strontium hexaaluminate magnetoplumbite, SrAl/sub 12/O/sub 19/. The experimental crystal structure and symmetry of the complex material is well reproduced with our potential models and some crystal physical properties are calculated.

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