• Proceedings of the Korea Crystallographic Association Conference
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• 2001.05a
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• pp.6-6
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• 2001

• Proceedings of the Korea Crystallographic Association Conference
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• 2000.05a
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• pp.29-29
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• 2000

• Proceedings of the Korea Crystallographic Association Conference
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• 2005.11a
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• pp.12-13
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• 2005

• Proceedings of the Korea Crystallographic Association Conference
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• 2005.11a
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• pp.15-15
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.214-219
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• 2002

In order to elucidate the crystallographic orientation dependence of electrical properties of carbon (C)-doped GaAs epilayers, C incorporation into GaAs epilayers on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A has been performed by a low pressure metalorganic chemical vapor deposition using C tetrabromide ($CBt_4$) as a C source. The hole concentration of C-doped GaAs epilayers rapidly decreases with a hump at (311)A with increasing the offset angle. Although the growth temperature and the V/III ratio are varied, the crystallographic orientation dependence of hole concentration show a same trend. The above behaviors indicate that the bonding strength of As sites on a glowing surface plays an important role in the C incorporation into the high-index GaAs substrates.

• Proceedings of the Korea Crystallographic Association Conference
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• 2000.11a
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• pp.25-25
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• 2000

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.227-232
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• 2001

Structure-physical properties relationships for Aurivillius ceramics are discussed, with empha-sis in symmetry considerations. Single-crystal materials and polycrystal ceramics are analysed. Electric and magnetic coupling properties are considered. Colour Symmetry Groups and Texture Analysis tool are emploed. Symmetry conditions for polarisation vectors and inverse pole figures related to Aurivillius phases are given. The influence of crystallographic texture of the physical properties of polycrystalline Aurivillius ceramics is evaluated.

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.31-31
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• 2007

• Proceedings of the Korea Crystallographic Association Conference
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• 2001.11a
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• pp.23-24
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• 2001

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.43-49
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• 2013

${\beta}$-SiC was deposited onto a graphite substrate by a LPCVD method and the effect of the crystallographic orientation on mechanical properties of the deposited SiC was investigated. The deposition was performed at $1300^{\circ}C$ in a cylindrical hot-wall LPCVD system by varying the deposition pressure and total flow rate. The texture and crystallographic orientation of the SiC were evaluated by XRD. The deposition rate increased linearly with the gas flow rate from 800 sccm to 1600 sccm. It also increased with the pressure but became saturated above a total pressure of 3.3 kPa. In the range of 3.3 - 10 kPa, the preferred orientation changed from the (220) and (311) planes to the (111) plane. The hardness and elastic modulus showed maximum values when the SiC had the (111) preferred orientation, though it gradually decreased upon a change to the (220) and (311) preferred orientations.