• The Journal of the Petrological Society of Korea
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• v.6 no.3
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• pp.185-209
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• 1997

Granitic rocks in the Cheongsan area cosist of three plutons-Baegrog granodiorite, Cheongsan porphyritic granite, and two mica granite. Amphilboles from the Baegrog granodiorite belong to the calcic amphilbole group and show compositional variations from magnesio-hornblende in the core to actinolitic hornblende in the rim. Biotites from the three granites represent intermediate compositions between phlogopite and annite. Muscovites from the two mica granite are considered to be primary muscovite in terms of the occurrence and mineral chemistry. Each granitic rock reveals systematic variation of major oxide contents with $SiO_2$. Major oxide variation trends of the Baegrog granodiorite are fairly different from those of Cheongsan porphyritic granite and two mica granite. The latter two granitic rocks are also different with each other in variation trends for some oxides. Thus three granitic rocks in the Cheongsan area were solidifield from the independent magmas of chemically different, heterogeneous origin. The granitic rocks in the area show calc-alkaline nature. The whole rock geochemistry shows that the Baegrog granodiorite and Cheongsan porphyritic granite belong to metaluminous, I-type granite, whereas the two mica granite to peraluminous, I/S-type granite. The opaque mineral contents and magnetic susceptibility represent that the granitic rocks in the area are ilmenite-series granite, indicating that each magma was solidified under relatively reducing environment. The tectonic environment of the granitic activity in the area seems to have been active continental margin. Alkali feldspar megacryst in the Cheongsan porphyritic granite is considered to be magmatic, judging from the crystal size, shape, arrangement, and distribution pattern of inclusions. The petro-graphical characteristics of the Cheongsan porphyritic granite can be explained by two stage crystallization. Under the smaller degree of undercooling the alkali feldspar megacrysts rapidly grew owing to slow rate of nucleation and fast growth rate. At the larger degree of undercooling the nucleation rate and density drastically increased and the small crystals of the matrix were formed.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.6
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• pp.715-721
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• 2007

Residual calcium concentration is high, in general, at the effluent of the fluoride removal process in the electronics industry manufacturing semiconductor and LCD. To increase the stability of the membrane process incorporated for reuse of wastewater, the residual calcium is required to be pre-removed. Hyperkinetic Vortex Crystallization(HVC) process was installed in the electronics industry manufecturing semi conductor as a pilot scale for accelerating calcification of calcium ion. Compared to the conventional soda ash method, the 31% higher calcium removal efficiency was achieved when HVC was applied at the same sodium carbonate dosage. In order to maintain the economic calcium removal target of 70% preset by manufacturer, the dosing concentration of the soda ash was 530 mg/L based on influent flowrate. The seed concentration in the reactor was one of the critical factors and should be maintained in the range of $800\sim1,200mg$ SS/L to maximize the calcium removal efficiency. The calcite production rate was 0.30 g SS/g $Na_2CO_3$ in the average. The economic HVC passing time of the mixture was in the range of $2\sim5$ times. Relatively, stable calcium concentration was maintained in the range of $30\sim72$ mg/L(average 49 mg/L) although the calcium concentration in the feed was severely fluctuated with $74\sim359$ mg/L(average 173 mg/L). The HVC process was characterized as environment-friendly technology reducing chemical dosage and chemical sludge production and minimizing maintenance cost.

• Applied Chemistry for Engineering
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• v.5 no.6
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• pp.1036-1043
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• 1994

The silane crosslinking method was applied for the crosslinking of polyethylene (PE). Crosslinking of PE was performed by, first grafting vinyltrimethoxysilane(VTMOS) to the main chain of PE using an extruder at $200{\sim}210^{\circ}C$, followed by exposure to three different silane crosslinking conditions (1. immersed in $80^{\circ}C$ water, 2. at $80^{\circ}C$ air forced convection oven, 3. exposed to air at room temperature ). The thermal characteristic changes of PE resins with respect to the silane crosslinking conditions were studied by measuring the crystalline melting temperature, density and crosslinking reaction rate. Because silane crosslinking was carried out at solid state, crystalline melting temperature, crystallinity, crystal growth rate, crosslinking reaction rate and the change in the density of silane crosslinked PE were affected by crosslinking condition and the type of base resin. The properties of silane crosslinked PE were different from those of Peroxide crosslinked PE which was crosslinked at the molten state. It was found, from the result of DSC analysis, that silane crosslinked linear low density polyethylene(LLDPE) crosslinked at room temperature had no secondary melting peak because the crosslinking reaction proceeds slowly as the crystalline grows. After crystallization, the melting point of PE was lowered by crystalline interruption of crosslinked site.

• Journal of Pharmaceutical Investigation
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• v.36 no.4
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• pp.271-276
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• 2006

Felodipine, a calcium-antagonist of dihydropyridine type, is a poorly water soluble drug and has very low bioavailability. As preceding studies, use of solid dispersion systems and surfactants(solubilizers) has been suggested to increase dissolution and to improve bioavailability of felodipine. But in case of solid dispersion systems, large amount of toxic organic solvents should be used and manufacturing process time become longer than conventional process. In case of using surfactants, as time elapsed, decreasing of dissolution rate of felodipine due to crystallization has been reported. In this study, Copovidon as a hydrophilic polymer and $Transcutol^{\circledR}$ as a surfactant were combined to formulations if order to increase dissolution of felodipine and conventional wet granulation process were applied to manufacturing of formulations. The effect of Copovidon and $Transcutol^{\circledR}$ on the dissolution oi felodipine was investigated in-vitro. When Copovidon and $Transcutol^{\circledR}$ used simultaneously, the dissolution rate of felodipine was prominently increased compared with when used separately and the maximum increase in the dissolution of felodipine was 5.8 fold compared to control. This is most probably due to synergy effect by combination of Copovidon and $Transcutol^{\circledR}$. Felodipine sustained release tablets were successfully formulated using several grades of HPMC as a release retarding agent. The stability of felodipine sustained release tablet was evaluated after storage at accelerated condition($40^{\circ}C/75%\;RH$) for 6months in HDPE(High density polyethylene) bottle. Neither significant degradation nor change of dissolution rate for felodipine was observed after 6months. In conclusion, felodipine sustained release tablet was successfully formulated and dissolution of felodipine, poorly water soluble drug, was prominently increased and also stability was guaranteed by using combination system of hydrophilic polymer and surfactant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.8-14
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• 1997

RuO$_{2}$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructue, surface roughness and resistivity are studied with various O$_{2}$/(Ar+O$_{2}$) ratios and substrate temperatures. As O$_{2}$/(Ar+O$_{2}$) ratio decreas and substrate temperature increases, the preferred growing plane of RuO$_{2}$ thin films are changed from (110) to (101) plane. With increase of the O$_{2}$/(Ar+O$_{2}$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_{2}$ thin films increase form 2.38nm to 7.81 nm, and from 103.6.mu..ohm.-cm to 227.mu..ohm.-cm, resepctively, but the deposition rate decreases from 47 nm/min to 17nm/min. On the other hand, as the substrate temperature increases form room temperature to 500.deg. C, resistivity decreases from 210.5.mu..ohm.-cm to 93.7.mu..ohm.-cm. RuO$_{2}$ thin film deposited at 300.deg. C shows a execellent surface roughness of 2.38nm. As the annealing temperature increases in the range between 400.deg. C and 650.deg. C, the resistivity decreases because of th improvement of crystallinity. We find that RuO$_{2}$ thin film deposited at 20% of O$_{2}$/(Ar+O$_{2}$) ratio and 300.deg. C of substrate temperature shows execellent combination of surface smoothness and low resistrivity so that it is well qualified for bottom electrodes for ferroelectric thin films.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.441-446
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• 2003

Fine powders of ZnO were synthesized by the sol-gel method. The shape of gel powders with calcination temperatures changed into the sheet structure, the needle shape, and the spherical grain. The growth rate of grain size was slow to 700$^{\circ}C$ but high above 700$^{\circ}C$. The bigger the grain size is, the higher the degree of crystallization is. The organic element in gel powders evaporated below 300$^{\circ}C$. Temperature dependence of conductances showed the sigmoidal shape, but the temperature range of the constant conductances narrowed with the decrement of the calcination temperature of gel powders. The optimum sensing property for CO gas were observed with the specimen calcined at 500$^{\circ}C$ and degraded with the increment of calcination temperature.

• Progress in Superconductivity
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• v.5 no.1
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• pp.75-79
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• 2003

YBCO films were deposited with various thicknesses from 100nm to 1.6$\mu\textrm{m}$ on single crystal $SrTiO_3$ substrates by pulsed laser deposition (PLD). The effects of different deposition conditions, especially different deposition rates by means of changing the pulsed laser frequency up to 200Hz, on the J$_{c}$ value were studied. For YBCO film with the thickness of 200nm, the $J_{c}$ value of $2.1MA/\textrm{cm}^2$ has been achieved under the high deposition rate of 3.2nm/s (190nm/min). The $J_{c}$ can be maintained greater than $1M/\textrm{cm}^2$ with the thickness less than 1$\mu\textrm{m}$. The X-ray analysis was used to examine the texture, crystallization and surface quality. The SEM was employed to analyze the surface of YBCO, and it was shown the surface of YBCO film became rougher with increasing the thickness. There were many large singular outgrowths and networks of outgrowths on the surface of YBCO films which lowered the density of thick YBCO film. The outgrowth network was probably the a-axis YBCO corresponding to XRD $\theta$-2$\theta$scan and $\chi$-scan which were used to characterize a-axis orientation of YBCO film. The reason for J$_{c}$ declining with increasing the thickness was studied and discussed.sed.

• Journal of Pharmaceutical Investigation
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• v.34 no.5
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• pp.401-406
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• 2004

To develop an intravenous delivery system of all-trans retinoic acid (ATRA) for the cancer therapy, poly(L-lactic acid) nanoparticles were prepared and characterized. Emulsification-solvent evaporation method was chosen to prepare submicron sized nanoparticles. Spherical nanoparticles less than 200 nm in diameter with narrow size distribution were prepared, and the entrapment efficiency of drug was more than 95%. The endothermic peak at $183^{\circ}C$ and X-ray crystallographic peak of ATRA appeared in the nanoparticle system, suggesting the inhibition of crystallization of ATRA by polymer adsorption during the precipitation process. ATRA was released at $37^{\circ}C$ for 60 days and the release rate was dependent on the concentration of drug incorporated in the nanoparticles. While ATRA was unstable in the light, it was very stable at $4^{\circ}C$. These results suggest the usefulness of PLA nanoparticles as a sustained and prolonged release carrier for ATRA.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.494-498
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• 2000

RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.