• Title/Summary/Keyword: Crystallization rate

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The Study of Nanocrystalline Silicon Bottom-gate Thin Film Transistor Fabricated at Low Temperature for Flexible Display

  • Lee, Youn-Jin;Lee, Kyoung-Min;Hwang, Jae-Dam;No, Kil-Sun;Yoon, Kap-Soo;Yang, Sung-Hoon;Hong, Wan-Shick
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.557-559
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    • 2009
  • We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.

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Synthesis of Diamond films for Radiation Detector (방사선 검출기용 다이아몬드 막의 합성)

  • 박상현;김정달;박재윤;김경환;구효근;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.366-369
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    • 1999
  • Synthetic diamond films have been deposited on the silicon(100) surface and molybdenum substrates using an microwave plasma enhanced vapor deposition (MWPECVD) method. The effect of deposition time, surface morphology, X-ray diffraction pattrm, infrared transmittance and Raman Scattering have been studied, The diamond film deposited on Mo substrate for (100) hours at 40 torr H$_2$-CH$_4$O$_2$ gas system have been shown 1${\mu}{\textrm}{m}$/h of growth rate and good crystallization

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The Effect of Complexing Agent on the Deposit Charateristics in the Electroless Nickel Plating Solution (무전해 니켈 도금액에서 착화제가 도금피막에 미치는 영향)

  • Jeon Jun-Mi;Koo Suck-Bon;Lee Hong-Kee;Park Hae-Duck;Shim Su-Sap
    • Journal of the Korean institute of surface engineering
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    • v.37 no.6
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    • pp.326-334
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    • 2004
  • Deposit charateristics of Electroless nickel(EN) were investigated with various complexing agents. As expected, the deposition rate of nickel is increased with pH and that of Phosphorous is decreased with pH. The result of SEM investigation shows that the rough surface crystallization is appeared with pH. It is show that the surface resistance of EN deposit is decreased with pH at 85$^{\circ}C$.

Thermal Behavior of Nylon 6 and Bisphenol-A Polycarbonate Blends Compatibilized with an Epoxy Resin (에폭시 수지로 상용화된 Nylon 6와 비스페놀-A PC 블렌드의 열적거동)

  • Abdrhman, Mabrouk J.M.;Zhang, Liye;Zhou, Bing;Li, Hangquan
    • Polymer(Korea)
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    • v.32 no.6
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    • pp.523-528
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    • 2008
  • Diglycidyl ether of bisphenol-A (DGEBA) was selected as a compatibilizer in Nylon 6 and bisphenol-A polycarbonate (PC) blends. SEM revealed a much finer morphology in the presence of DGEBA. The thermal properties, such as glass transition, melting point, crystallization temperature and rate, of the blends were examined using DSC. Overall, the introduction of DGEBA caused a strong dependence of these thermal properties on the composition due to compatibilization.

The crystallization characteristic of ZnO films deposition at low temperature by oxygen flow rate and RF power (저온공정에서 RF 파워와 산소유량에 의한 ZnO 박막의 결정성 연구)

  • Wen, Long;Kim, Hye-Ran;Jin, Su-Bong;Choe, Yun-Seok;Choe, In-Sik;Han, Jeon-Geon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.343-345
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    • 2012
  • 대향 타겟 스퍼터링법 (Facing Targets Sputtering)을 이용하여 저온 공정에서 ZnO 박막을 증착하였다. 이 실험에서 두 개의 타겟의 거리를 110nm로 고정하고 박막의 증착두께를 150nm로 정하였다. 산소 가스의 유량, 인가 전력을 변수로 하였을 경우 ZnO 박막의 방향성과 결정성을 XRD로 측정하고 분석하였다. 그 결과 인가전압과 산소 유량의 증가에 따라 결정성은 좋아진다.

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Photoluminescence of the Mn-doped ZnGa₂O₄ Phosphors Prepared by Coprecipitation of Metal Salts

  • 고중곤;박희동;김동표
    • Bulletin of the Korean Chemical Society
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    • v.20 no.9
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    • pp.1035-1039
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    • 1999
  • Manganese-activated zincgallate (Zn1-xMnxGa2O4) phosphor as a green phosphor was readily prepared by coprecipitation in aqueous basic solution of metal salts. The obtained product converted to amorphous zincgallate even at 300℃, followed by crystallization at 1000 ℃. The pyrolyzed phosphor showed fine particle, then reduction treatment at 900 ℃ changed into homogeneous shape with slight grain growth(particle size less than 0.5 mm). The photoluminescence characteristics of the zincgallates have been investigated as a function of dopant concentrations, reducing atmospheres and temperatures. Under UV excitation the phosphors displayed the highest green emission efficiency at 504 nm when the specimen oxidized at 1000 ℃ was reduced at 900 ℃ in a mild hydrogen atmosphere (97% N2, 3% H2) with a flow rate of 100 ml/min.

The Effects of Deposition Conditions on Deposition Rate and Crystallinity of ZnO Thin Films Deposited by PECVD (PECVD를 이용한 ZnO박막 증착시 증착 변수가 증착속도 및 결정 구조에 미치는 영향)

  • Kim, Yeong-Jin;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.4 no.1
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    • pp.90-96
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    • 1994
  • ZnO thin films were deposited using Diethylzinc and $N_{2}O$ gas by plasma enhanced CVD (PECVD) at low substrate temperatures below $300^{\circ}C$. The effect of deposition parameters on the growth rate and the structural properties was determined at various deposition conditions. Crystallized ZnO thin films were successfully deposited even at $150^{\circ}C$ of substrate temperature. Above $200^{\circ}C$ c-axis oriented ZnO thin films, of which a standard deviation of X-ray rocking curve was less than $6^{\circ}$. were deposited on glass substrates. The variation of deposition rate showed different trends depending on substrate temperature and rf-input power. According to the deposition rate behavior as a function of substrate temperature, the transition points were observed resulting from crystallization of ZnO thin films. The activation energies for the deposition of ZnO thin films were 3.1KJ/mol and 1.9KJ/mol for the rf powers of 200W and 250W, respectively.

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Performance analysis of a cooling system with refrigerant in a marine absorption refrigerator (선박용 흡수식 냉동기의 냉매적용 냉각 시스템 성능 분석)

  • Yun, Sang-Kook
    • Journal of Advanced Marine Engineering and Technology
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    • v.40 no.4
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    • pp.282-287
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    • 2016
  • Recently in order to protect the ocean environment and to reduce energy consumption, shipbuilders have been developing highly economized ships. This research analyzed the possibility of adopting the onshore absorption refrigerator to offshore ships having a cooling system with refrigerant by using the waiste heat of the engine jacket cooling water instead of compression refrigerators. The results showed that R236fa could be a suitable medium for absorbing the heat of the absorber and condenser in an absorption refrigerator. The cooling system using R236fa achieved a high COP of 0.798, which is 15% and 5% higher than an air cooling system with a cooling tower and a water cooling system with a heat exchanger, respectively. The cooling system with R236fa achieved high efficiency with a 25% reduction in flow rate of LiBr solution and only 15.7% flow rate of cooling medium as compared to the water cooling system. The heating of sea water by the engine jacket water flowing out from the generator can prevent the crystallization of LiBr solution due to the low temperature of sea water.

Improvement of Dissolution Rate for Zaltoprofen Tablets Using CMC and HPMC (CMC와 HPMC를 이용한 잘토프로펜 정제의 용출률 개선)

  • Park, Hyun-Jin;Hong, Hee-Kyung;Song, Yi-Seul;Hong, Min-Sung;Seo, Han-Sol;Hong, Dong-Hyun;Lee, Dong-Won;Khang, Gil-Son
    • Polymer(Korea)
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    • v.34 no.4
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    • pp.300-305
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    • 2010
  • Zaltoprofen is a propionic acid derivative of non-steroidal anti-inflammatory drugs (NSAIDs) and has been widely used in the treatment of a number of arthritic conditions or lumbago. Zaltoprofen has low water solubility and low bioavailability, therefore great efforts have been devoted to enhance the extent of drug adsorption. In this study, zaltoprofen was formulated into a tablet to enhance the bioavailability and to achieve sustained-release using additives such as lactose monohydrate, carboxymethylcellulose (CMC), hydroxypropylmethylcellulose (HPMC). Fourier transform-infrared (FTIR) and differential scanning calorimeter (DSC) were employed to study the structure and crystallization of zaltoprofen in the tablet with various contents of additives. It was found that additives had interactions with zaltoprofen and inhibited the crystallization of zaltoprofen. Tablets containing low viscosity HPMC showed a higher release than those containing high viscosity HPMC. Also, as the amount of CMC increased zaltoprofen release increased.

Evaluation of Multi-Level Memory Characteristics in Ge2Sb2Te5/TiN/W-Doped Ge2Sb2Te5 Cell Structure (Ge2Sb2Te5/TiN/W-Doped Ge2Sb2Te5 셀 구조의 다중준위 메모리 특성 평가 )

  • Jun-Hyeok Jo;Jun-Young Seo;Ju-Hee Lee;Ju-Yeong Park;Hyun-Yong Lee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.1
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    • pp.88-93
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    • 2024
  • To evaluate the possibility as a multi-level memory medium for the Ge2Sb2Te5/TiN/W-doped Ge2Sb2Te5 cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge2Sb2Te5 and W-doped Ge2Sb2Te5 thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.