• Title/Summary/Keyword: Crystallization Temperature

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Extraction & Purification of ${\beta}$-carotene from Recombinant Escherichia coli (재조합 대장균으로부터 고순도 베타-카로틴의 추출 및 정제)

  • Jo, Ji-Song;Nguyen, Do Quynh Anh;Yun, Jun-Ki;Kim, Yu-Na;Kim, You-Geun;Kim, Sung-Bae;Seo, Yang-Gon;Lee, Byung-Hak;Kang, Moon-Kook;Kim, Chang-Joon
    • Microbiology and Biotechnology Letters
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    • v.37 no.3
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    • pp.231-237
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    • 2009
  • This paper aimed to develop a solvent extraction and purification process to recover high-purified ${\beta}$-carotene from recombinant Escherichia coli. Cells harvested from the culture broth were treated through numerous steps: dehydration, solvent extraction, crystal formation and separation. To optimize the extracting condition, experiments were carried out to investigate the effect of cell disruption, temperature, organic solvents, solvent-biomass ratio on the yield of ${\beta}$-carotene extracted from cells. The result indicated that no significant differences of extraction yield were observed from cells with or without step of cell disruption. Among different extracting solvents, the highest extraction yield of ${\beta}$-carotene, 30.3 mg-${\beta}$-carotene/g-dry cells, was obtained with isobutyl acetate at solvent-biomass ratio 25 mL/g-dry cells at $50^{\circ}C$. Notably, in case of acetone, the extraction yield was quite low when using acetone itself, but increased almost up to the highest value when combining this solvent and olive oil. The purity of ${\beta}$-carotene crystals obtained from crystallization and separation was 89%. The purity degree was further improved up to 98.5% by treating crude crystals with additional ethanol washing.

Plagioclase Composition of Feldspar Trachybasalt in Jeju Island (제주도 장석 조면현무암의 장석 성분에 대한 연구)

  • Yea, Nam Hee;Yun, Sung-Hyo;Koh, Jeong Seon
    • The Journal of the Petrological Society of Korea
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    • v.21 no.3
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    • pp.309-333
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    • 2012
  • Basalt having lots of feldspar phenocryst occurred at the northern and southern slope of the Mt. Halla, Jejudo. Among them, the Sioreum trachybasalt in southern slope consists of abundant phenocrysts of plagioclase in aphanitic groundmass. And the number of plagioclase grains are about 20 per $10cm^2$, and based on 667 grains the sizes are 13~0.7 mm (average 4.23 mm) in length and 8.6~0.5 mm (average 2.3 mm) in width. In according to modal analyses, Sioreum basaltic rock consists mainly of plagioclase (16~28%), olivine, clinopyroxene (1.5~6%) and opaque minerals (~0.1%) of magnetite and ilmenite as phenocryst and microphenocryst and groundmass (60~82%). The compositions of plagioclase, olivine and clinopyroxene are bytownite~andesine, chrysolite~hyalosiderite, augite respectively. Plagioclase phenocrysts show different type of zoning, namely, normal, reversal, patchy, oscillatory type. The An contents of zoned plagioclase mainly increase from core to rim. Those of oscillatory type from core to rim show variations of increase following decrease or decrease following increase, being more enriched in rim or almost same to core. Under the microscope, some plagioclase phenocrysts are especially melted in core part or marginal part, or found as only the remnant remain which resulted from reaction with melt. Some clinopyroxene are also corroded in margin part or found as irregular shape resulted from melting. The characteristics of petrography and compositional variation from core to rim of plagioclase and clinopyroxene, indicate that they are disequilibrium with melt and has been undergone geological environmental changes in magma batch during crystallization including magma mixing with replenishment of more mafic and high temperature melt.

Low temperature plasma deposition of microcrystalline silicon thin films for active matrix displays: opportunities and challenges

  • Cabarrocas, Pere Roca I;Abramov, Alexey;Pham, Nans;Djeridane, Yassine;Moustapha, Oumkelthoum;Bonnassieux, Yvan;Girotra, Kunal;Chen, Hong;Park, Seung-Kyu;Park, Kyong-Tae;Huh, Jong-Moo;Choi, Joon-Hoo;Kim, Chi-Woo;Lee, Jin-Seok;Souk, Jun-H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.107-108
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    • 2008
  • The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

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Petrological Characteristics of Two-Mica Granites : Examples from Cheongsan, Inje-Hongcheon, Yeongju and Namwon areas (복운모 화강암의 암석화학적 특징 : 청산, 인제-홍천, 영주 및 남원지역의 예)

  • 좌용주
    • The Journal of the Petrological Society of Korea
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    • v.6 no.3
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    • pp.210-225
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    • 1997
  • From their general natures of peraluminous, S-type and ilmenite-series granites, two-mica granites in the Cheongsan, Inje-Hongcheon, Yeongju and Namwon areas were originated from crust-derived granitic magma and solidified under reducing condition. Each two-mica granite in Inje-Hongcheon and Namwon districts was differentiated from the the residual magma of porphyric biotite granite and high Ti/Mg biotite granite, respectively. The genetic relationships between two-mica granite and porphyritic biotite granite in Chenongsan district and between two-mica granite and biotite granodiorite in Yeongju district are ambiguous. In Namwon district granitic magmas were water-saturated and possible water solubilities in magmas were more than 5.8wt.%. In Yeongju district two-mica granitic magma was nearly water-saturated and showed possible water solubilities between 2.4~5.8wt.%. Two-mica granitic magmas in Cheongsan and Inje-Hongcheon districts were water-undersaturated. Pressure-dependent minimum melt compositions (0.5~2kb) and petrographic textures of two-mica granites in Inje-Hongcheon and Yeongju districts represent that the granites intruded and solidified at shallow level, whereas those in Cheongsan and Namwon districts exhibit relatively deeper level of granitic intrusion (2-3kb). The intersection of granite-solidus/muscovite stability indicates that magmatic primary muscovite can be crystallized from the water-saturated magma above 1.6kb (ca. 6km), but below the pressure muscovite can be formed by the subsolidus reaction. On the other hand, more pressure would be necessary for the crystallization of primary muscovite from the water-undersaturated magma. This pressure condition can explain the occurrence of primary and secondary muscovites from the two-mica granites in the areas considered. The experimental muscovite stability must be cautious of the application to examine the origin of muscovite. The muscovite stability can move toward high temperature field with adding of Ti, Fe and Mg components to the octahedral site of pure muscovite end member.

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Thermal and Uplift Histories of the Jurassic Granite Batholith in Southern Jeonju: Fission-track Thermochronological Analyses (전주 남부지역 쥬라기 화강암질 저반체의 지열사와 융기사: 피션트랙 열연대학적 해석)

  • Shin, Seong-Cheon
    • Economic and Environmental Geology
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    • v.49 no.5
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    • pp.389-410
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    • 2016
  • Wide ranges of fission-track (FT) ages were obtained from the Jurassic granite batholith in Jeonju-Gimje-Jeongeup area, southwestern Okcheon Belt: sphene=158~70 Ma; zircon=127~71 Ma; apatite=72~46 Ma. Thermochronological analyses based on undisturbed primary cooling and reset or partially-reduced FT ages, and some track-length data reveal complicated thermal histories of the granite. The overall cooling of the batholith is characterized by a relatively rapid earlier-cooling (${\sim}20^{\circ}/Ma$) to $300^{\circ}C$ isotherm since its crystallization and a very slow later-cooling ($2.0{\sim}1.5^{\circ}/Ma$) through the $300^{\circ}C-200^{\circ}C-100^{\circ}C$ isotherms to the present surface temperature. It is indicated that the large part of Jurassic granitic body experienced different level of elevated temperatures at least above $170^{\circ}C$ (maximum>$330^{\circ}C$) by a series of igneous activities in late Cretaceous. Consistent FT zircon ages from duplicate measurements for two sites of later igneous bodies define their formation ages: e.g., quartz porphyry=$73{\pm}3Ma$; diorite=$73{\pm}2Ma$; rhyolite=$72{\pm}3Ma$; feldspar porphyry=$78{\pm}4Ma$ (total weighted average=$73{\pm}3Ma$). Intrusions of these later igneous bodies and pegmatitic dyke swarms might play important roles in later thermal rise over the study area including hot-spring districts (e.g., Hwasim, Jukrim, Mogyokri, Hoebong etc.). On the basis of an assumption that the latercooling of granite batholith was essentially controlled by the denudation of overlying crust, the uplift since early Cretaceous was very slow with a mean rate of ~0.05 mm/year (i.e., ~50 m/Ma). Estimates of total uplifts since 100 Ma, 70 Ma and 40 Ma to present-day are ~5 km, ~3.5 km and ~2 km, respectively. The consistent values of total uplifts from different locations may suggest a regional plateau uplift with a uniform rate over the whole granitic body.

Dielectric properties of ${Ta_2}{O_5}$ thin film capacitor with $SnO_2$ thin film underlayer ($SnO_2$ 박막을 이용한 ${Ta_2}{O_5}$박막 커패시터의유전특성)

  • Kim, Jin-Seok;Jeong, Gang-Min;Lee, Mun-Hui
    • Korean Journal of Materials Research
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    • v.4 no.7
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    • pp.759-766
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    • 1994
  • Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

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Optimization of Modified Starches on Retrogradation of Korean Rice Cake(Garaeduk) (가래떡의 노화 억제에 관한 변형 전분의 최적화)

  • Park, Hyun-Jeong;Song, Jae-Chul;Shin, Wan-Chul
    • The Korean Journal of Food And Nutrition
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    • v.19 no.3
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    • pp.279-287
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    • 2006
  • This study was carried out to investigate the influences of modified starches on suppression of retrogradation in Korean rice cake for their optimization, Garaeduk. Based upon studying Avrami equation, the Avrami exponent n value of all the experiment samples was found to be 1.03 ${\sim}$ 1.37 in the influence of modified starches on retrogradation of the rice cake. This means that the retrogradation of the Korean rice cake occurred instantly after the crystallization of starch particles in the Korean rice cake formulated by modified starches. The highest Avrami exponent n value was indicated in the control sample. The rate constant k of retrogradation in the Korean rice cake formulated by modified starches showed comparatively low and appeared to be the lowest in the Korean rice cake formulated by SHPP. This tendency was shown well in the time constant(1/k) of retrogradation velocity. According to the DSC analysis, the onset temperature of gelatinization in thermal characteristics showed somewhat high in case of addition of modified starch into the Korean rice cake on storage time and the SHPP was slowly gone up. In peak temperature of gelatinization in thermal characteristics of the DSC analysis, SSOS and ASA were increased a little in comparison with the control. The control was comparatively high increase. Melting enthalphy of all samples added with modified starches (SSOS: 21.1${\rightarrow}$23.7${\rightarrow}$24.1, ASA: 21.1${\rightarrow}$24.8${\rightarrow}$25.4) appeared to be lower than that of the Korean rice cake without modified starches(21.2${\rightarrow}$26.1${\rightarrow}$27.1). The Korean rice cake added with SHPP was shown to be the lowest in the increasing rate of melting enthalpy(20.9${\rightarrow}$21.4${\rightarrow}$22.1). Heat spreadability of all the samples in Martin melting diameter was revealed to be good in order of control, ASA, SSOS, SHPP and especially the Korean rice cake added with SHPP was shown to be the best in heat spreadability. In color, sensory examination and textural characteristic of the Korean rice cake added with modified starches, the L$^*$value was not changed practically with the storage time and seemed to be stable. The a$^*$ value of the samples was followed by control(2.21${\rightarrow}$5.34: 141.6%), ASA (2.01${\rightarrow}$4.22: 110.0%), SSOS (2.78${\rightarrow}$4.87: 75.2%) and SHPP (2.12${\rightarrow}$3.40: 60.4%) in order of color change. Also the b$^*$ value of the samples was followed by control(4.32${\rightarrow}$6.35: 47.0%), ASA (4.66${\rightarrow}$5.73: 23.0%), SSOS (4.90${\rightarrow}$5.89: 20.2%) and SHPP (4.89${\rightarrow}$5.12: 4.7%) and there was the least (or no) color change with the SHPP. Textural characteristics of samples was shown to be the highest in case of modified starch addition and especially SHPP appeared to be the best in texture.