• Title/Summary/Keyword: Crystalline graphite

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Effect of Stabilization Conditions on the Microstructure and Electrochemical Properties of Melt-blown Graphite Fibers Prepared from NMP (NMP로부터 제조된 Melt-blown흑연섬유의 안정화조건에 따른 미세구조와 전기화학적 특성)

  • Kim Chan;Yang Kap Seung;Ko Jang Myoun;Park Sang Hee;Park Ho Chul;Kim Young-Min
    • Journal of the Korean Electrochemical Society
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    • v.4 no.3
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    • pp.104-108
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    • 2001
  • Naphthalene derived mesophase pitch WP) was spun into short fibers by using melt-blown technology. The pitch fibers oxidative stabilization were carried out heating rates of $2^{\circ}C/min,\;5^{\circ}C/min\;and\; 10^{\circ}/min$. The heating rate was a key factor to maximate the capacity of the Li-ion secondary battery through controlling the morphology of the graphitized fiber. The diameters of the melt-blown fibers prepared were in the range of $4{\mu}m\~16{\mu}m$ with functions of air jet speed, air temperature and the temperature of the nozzle. The graphitized fibers of $10{\mu}m$ diameters showed various morphological structure with heating rate of the stabilization. Radial, radial-random and skin-core cross-sectional structure of the fibers were observed at the respective heating rate of $2^{\circ}C/min\;5^{\circ}C/min\;and\;10^{\circ}C/min$. Most crystalline structure of graphite was obtained from the fiber stabilized at heating rate of $10^{\circ}C/min$ exhibiting the best anode performance with 400 mAh/g of capacitance and $96.8\%$ of charge/discharge efficiency.

A Study on the Infrared Emission Properties and Freeze-thaw Resistance for Calcined Clay by Carburization Treatment (소성 점토의 침탄에 따른 동결융해 저항성 및 적외선 방사특성 연구)

  • Kim, Ki-Ho;Kim, Sang-Myoung;Kang, Byung-Chul
    • Journal of the Korean Ceramic Society
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    • v.45 no.7
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    • pp.387-394
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    • 2008
  • The Physical property changes of calcined clay by carburization were investigated studied. The carburization mechanism is the penetration of carbon which occurred during incomplete fuel combustion into crevice of clay structure. The experiments for elasticity and freeze-thaw resistance were conducted, and the results can be summarized as follows: Dynamic modulus of elasticity and also freeze-thaw resistance of calcined clay by carburization treatment increased more than 92% after testing 300 cycle, which was more improved than 88% of calcined clay. Therefore, it can decrease the possibility of winter-sowing, which is one the weakness of calcined clay. It is on the basis of the fact that the porosity of calcined clay by carburization treatment is about 12%, which indicates smaller pore spaces comparing with the 14% of porosity of calcined clay and those values were calculated by apparent porosity show and also supported by SEM images. Infrared emissivity of calcined clay by carburization treatment and calcined clay were respectively 0.92 and 0.9l at $80^{\circ}C$. However, those values were 0.91 and 0.88 at $200^{\circ}C$, which means infrared emissivity of calcined clay by carburization treatment shows 3.6% higher than the calcined clay. Moreover, within the wavelength range from 3 to $7\;{\mu}m$, while the calcined clay had low infrared emissivity, the calcined clay by carburization treatment had increased infrared emissivity. It is inferred that it was affected by carbon element that has high infrared absorptivity within this wavelength range.

RBSC Prepared by Si Melt Infiltration into the Y2O3 Added Carbon Preform (Y2O3 첨가 탄소 프리폼에 Si 용융 침투에 의해 제조한 반응 소결 탄화규소)

  • Jang, Min-Ho;Cho, Kyeong-Sik
    • Journal of Powder Materials
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    • v.28 no.1
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    • pp.51-58
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    • 2021
  • The conversion of carbon preforms to dense SiC by liquid infiltration is a prospectively low-cost and reliable method of forming SiC-Si composites with complex shapes and high densities. Si powder was coated on top of a 2.0wt.% Y2O3-added carbon preform, and reaction bonded silicon carbide (RBSC) was prepared by infiltrating molten Si at 1,450℃ for 1-8 h. Reactive sintering of the Y2O3-free carbon preform caused Si to be pushed to one side, thereby forming cracking defects. However, when prepared from the Y2O3-added carbon preform, a SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C → SiC reaction at 1,450℃, 3C and 6H SiC phases, crystalline Si, and Y2O3 were generated based on XRD analysis, without the appearance of graphite. The RBSC prepared from the Y2O3-added carbon preform was densified by increasing the density and decreasing the porosity as the holding time increased at 1,450℃. Dense RBSC, which was reaction sintered at 1,450℃ for 4 h from the 2.0wt.% Y2O3-added carbon preform, had an apparent porosity of 0.11% and a relative density of 96.8%.

Effect of Y2O3 Additive Amount on Densification of Reaction Bonded Silicon Carbides Prepared by Si Melt Infiltration into All Carbon Preform (완전 탄소 프리폼으로부터 Si 용융 침투에 의해 제조한 반응 소결 탄화규소의 치밀화에 미치는 Y2O3 첨가량의 영향)

  • Cho, Kyeong-Sik;Jang, Min-Ho
    • Korean Journal of Materials Research
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    • v.31 no.5
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    • pp.301-311
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    • 2021
  • The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y2O3-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y2O3-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y2O3-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y2O3 phases are detected by XRD analysis without the appearance of graphite. As the content of Y2O3 in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y2O3 added has 0.20 % apparent porosity and 96.9 % relative density.

GQD layers for Energy-Down-shift layer on silicon solar cells by kinetic spraying method

  • Lee, Gyeong-Dong;Park, Myeong-Jin;Kim, Do-Yeon;Kim, Su-Min;Gang, Byeong-Jun;Kim, Seong-Tak;Kim, Hyeon-Ho;Lee, Hae-Seok;Gang, Yun-Muk;Yun, Seok-Gu;Hong, Byeong-Hui;Kim, Dong-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.422.1-422.1
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    • 2016
  • Graphene quantum dots (GQDs), a new kind of carbon-based photo luminescent nanomaterial from chemically modified graphene oxide (CMGO) or chemically modified graphene (CMG), has attracted extensive research attention in the last few years due to its outstanding chemical, optical and electrical properties. To further extended its potential applications as optoelectronic devices, solar cells, bio and bio-sensors and so on, intensive research efforts have been devoted to the CMG. However, the CMG, a suspension of aqueous, have problematic since they are prone to agglomeration after drying a solvent. In this study, we synthesized the GQDs from graphite and deposited on silicon substrate by kinetic spray. The photo luminescent properties of deposited GQD films were analyzed and compared with initial GQDs suspension. In addition, its carbon properties were investigated with GQDs solution properties. The properties of deposited GQD films by kinetic spray were similar to that of the GQDs suspension in water. We could provide a pathway for silicon-based silicon based device applications. Finally, the well-adjusted GQD films with photo luminescence effects will show Energy-Down-Shift layer effects on silicon solar cells. The GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density (Jsc) was enhanced by about 2.94 % (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

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Growth of Hexagonal Boron Nitride Thin Films on Silicon Using a Single Source Precursors

  • Boo, Jin-Hyo;Lee, Soon-Bo;Casten Rohr;Wilson Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.120-120
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    • 1998
  • Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

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Geology and Soils of Chojeong-Miwon Area (초정-미원지역의 지질과 토양에 관한 연구)

  • 나기창
    • The Journal of the Petrological Society of Korea
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    • v.9 no.1
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    • pp.13-28
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    • 2000
  • Chojeong area is mainly composed of the Ogcheon Group which consists of regionally metamorphosed, age-unknown sedimentary rocks. In the northwestern parts, the Group is intruded by the Jurassic Daebo granite and Cretaceous felsic and mafic dykes. The lowermost, Midongsan Formation which consists of milky white impure quartzite, crops out along the anticline axes with N40E trend. Ungyori quartzite Formation is intercalated with quartzite and slate. Miwon Formation is most widely exposed in the area and consists mainly of phyllitic sandy rocks with a thin crystalline limestone bed. Hwajeonri Formation is divided into two parts, pelitic lower and calcareous upper parts, composed with phyllite and slate. Changri and Hwanggangri Formations are typical members of Ogcheon Group, the former bearing coally graphite seams consists mainly of black slate and phyllite with intercalated greenish grey phyllite, the latter is pebble bearing phyllite formation of which matrix and pebbles are variable in compositions and size. Biotite granite, porphyritic granite and two mica granite belong to Jurassic so-called Dabo granite. They intruded the Ogcheon Group forming vast contact metarnophic zone. Quartz porphyry, mafic dyke and felsite intruded along the marginal zone of porphyritic granite batholith and fracture of NS trend. Main structural lineaments in Ogcheon Group shows N25-45E, NS and N30-45W trends. The N25-45E trends are mainly from general ductile deformation during regional metamorphism, showing isoclinal folding, Fl foliations and lithological erosional characters. Some of these trends are due to normal faults. The NS and N30-45W trends represent brittle deformation including faults and joints. In the area of granitic batholith, NS to N30- 45 trends are from the direction of dykes. In the soils of the area, average contents of heavy metal elements such as Cd, Cr, Cu, Pb, and Zn are 0.2, 50.6, 35.5, 27.9, and 93.4 ppm respectively, which are not higher than the average values of natural soils, under the tolerable level. Enrichment Index does not show any heavy metal pollution in the area. Average depths of weathering(5m vs. 2m), porosities(43.94 vs. 51.80), densities(l.29 vs. 1.15), and permeabilities(2.52 vs. 8.07) are comparable in granite areas and in the phyllite areas of Ogcheon Group.

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