• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.131-134
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• 2001

Vertically aligned carbon nanotubes are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition of acetylene gas at the temperature range 750∼950$^{\circ}C$. As the growth temperature increases from 750 to 950$^{\circ}C$, the growth rate increases by 4 times and the average diameter also increases from 30 nm to 130 nm while the density increases progresively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950$^{\circ}C$. This result demonstrates that the growth rate, diameter, density, and crystallinity of carbon nanotubes can be controlled with the growth temperature.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.531-540
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• 1991

In this study, high quality machinable ceramics was prepared from the K2O-MgO-Al2O3-SiO2-B2O3-F glass system using domestic pyrophyllite. The mixture of pyrophyllite and additives was melted at 1450$^{\circ}C$ for 1 hour and formed in a graphite mold. The base glass was heat-treated at 600$^{\circ}C$ to 1200$^{\circ}C$ with interval of 50$^{\circ}C$ for 3 hours identified by XRD. Crystalline phase were confirmed by XRD and their microstructure was observed by SEM. The glass ceramics which was prepared by heat treatment of base glass at 1150$^{\circ}C$ for short time has good physical, mechanical, thermal, chemical properties and machinability.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.6
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• pp.344-349
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• 2010

Silicon carbide nanowires were grown by heat treatment of the films at $1200^{\circ}C$ after amorphous SiC thin films were deposited on graphite substrate by radio frequency magnetron sputtering at $600^{\circ}C$. It was confirmed that SiC nanowires with the diameter of 20-60 nm and length of about 50nm were grown from Field Emission Scanning Election Microscope (FE-SEM) and Transmission Election Microscope (TEM) observation. The diameter of nanowires was increased as heat treatment time is increased. The nanowires were identified to ${\beta}$-SiC single crystalline from X-Ray Diffraction(XRD) analysis. It was observed from this study that deposition temperature of samples was critical to the crystallization of nanowires. On the other hand, the effect of deposition time was insignificant.

• Carbon letters
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• v.8 no.4
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• pp.335-339
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• 2007

Carbon/silicon composites were synthesized by mixing silicon powders with petroleum pitch and subsequent heat-treatment. The resultant composites were composed of carbon and nano-size crystalline silicon identified by XRD and EDX. FIB images and SEM images were taken respectively to detect the existence of silicon impregnated in carbon and the distribution of silicon on the carbon surface. The obtained carbon/silicon materials were assembled as half cell anodes for lithium ion secondary battery and their electrochemical properties were tested. The pitch/silicon composite (3 : 1 wt. ratio) heat treated at $1000^{\circ}C$ and mixed with 55.5 wt.% of graphite showed relatively good electrochemical properties such as the initial efficiency of 78%, the initial discharge capacity of 605 mAh/g, and the discharge capacity of 500 mAh/g after 20 cycles.

• Journal of Korea Foundry Society
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• v.20 no.3
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• pp.188-196
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• 2000

A vacuum casting was proposed as a new fabrication method of Si wafer for solar cell substrate. It was tried to fabricate a Si plate with good properties and to reduce the production cost by direct vacuum casting. By $5{\sim}10$ cmHg of pressure difference Si plate with $50{\times}46{\times}1.5\;mm^3$ was fabricated. For the preventing of the reaction between graphite mold and Si melt, BN powder coating or BN insert were used. The Si wafer was poly crystalline with 100 ${\mu}m{\sim}1$ mm order of grain size. And there were some twins and dislocations in the grains.

• Proceedings of the KSEEG Conference
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• 2001.04a
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• pp.308-310
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• 2001

유기물질이 오랜 기간동안 고온 고압하에서 탄화작용을 받아 생성된 천연흑연은 단위구조가 탄소육각망평면(炭素六角網平面)이 평행하게 배열된 층상으로 전기전도도 및 윤할성이 우수하나 소수성이 매우 강하며 표변화학적 특성이 거의 없기 때문에 다른 물질과 표면흡착이 매우 어려운 물질이다. 따라서 본 연구에서는 흑연의 표면특성을 변화시키고자 유기물(ABDM)을 흡착시키고 표면흡착 매커니즘 및 표면특성을 해석하였다. 흑연 입자 표면 위의 ABDM흡착은 두 단계의 서로 다른 게에서 이루어졌다. 첫 번째 단계는 흡착 초기 흑연입자와 ABDM의 표면전위 특성차이에 의한 1차 흡착으로 흑연표면 소수성이 더욱 증가하는 상태이고, 두 번째 단계는 1차 흡착된 ABDM 과 용액중의 ABDM chain 상호간의 steric 작용에 의한 2차 흡착이었다. 2차 흡착이 완료된 흑연입자 표면은 ABDM 이중층을 형성하게 되고 이에 따라 흑연의 표면전위 특성을 변화시킬 수 있었다.

• Carbon letters
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• v.7 no.4
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• pp.277-281
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• 2006

In this study, in order to easily provide functional groups on the surface of carbon nanotubes, dual structural multiwalled carbon nanotubes which have crystalline graphite and turbostratic carbon wall were synthesized by modified vertical thermal decomposition method. Synthesized dual structural MWCNTs were characterized by FE-SEM, TGA, HR-TEM, Raman spectroscopy and BET specific surface area analyzer. The average innermost and outermost diameters of the synthesized nanotubes were around 45 and 75 nm, respectively. The large empty inner space and the presence of graphitic carbons on the surface may open potential applications for gas storage and collection of hazardous materials.

• Applied Microscopy
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• v.48 no.4
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• pp.126-127
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• 2018

Carbon has numerous allotropes and various crystalline forms with full dimensionalities such as diamond, graphite, fullerenes, and carbon nanotubes leading a wide range of applications. Since the emerge of graphene consisting of a single atomic layer of carbon atoms, a fabrication of all-carbon-based device with combination of one-, two-, and three-dimensional carbons has become a hot issue. Here, we introduce an ultimate one-dimensional carbon atomic chain. Carbon atomic chains were experimentally created by removing atoms from monolayer graphene sheet under electron beam inside transmission electron microscope (TEM). A series of TEM images demonstrate the dynamics of carbon atomic chains over time from the formation, transformation, and then breakage.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.1
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• pp.58-63
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• 2005

PTFE (polytetrafluoroethylene) thin films were prepared from the pellets of the graphite doped PTFE via pulsed laser ablation with 1064 nm Nd:YAG laser. The graphite powder converts the absorbed photon energy into thermal energy which is transmitted to nearby PTFE. The PTFE is decomposed by thermal process. The deposited films were transparent and crystalline. SEM (scanning electron microscopy) and AFM (atomic force microscopy) analyses indicated that the film surface morphology changed to fibrous structure with increasing thickness. The fluorine to carbon ratios of the film were 1.7 and molecular axis was parallel with (100) Si-wafer substrate. These results obtained by XPS (X-ray photoelectron spectroscopy), FTIR (fourier transform infrared spectroscopy) and XRD (X-ray diffraction).