• Korean Journal of Crystallography
• /
• v.3 no.2
• /
• pp.98-110
• /
• 1992

B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.17 no.2
• /
• pp.142-152
• /
• 1992

This paper presentes a new method to measure high electric field (or high voltage) by using crystalline SiO2 which has very high half wave voltage. There are many difficulties in measuring high electric field using other crystals which have generally low half wave voltage.By applying Stokes parameter and Mueller matrix. We derive optical modulation equation in the sensor which is composed of a polarizer, and Mueller matrix, we derive optical modulation equation in the sensor which is composed of a polarizer, a Pokels material, and an analyzer, We theoretically analyzed electro-optic effect, and calculated the phase retardation and half wave volt age of the birefringent material. The designed optical valtage sensor has very excellent linearity up to 20KV without divided volt-age. The maximum error was measured within 3%. Before annealing of Sio2 crystal, the maximum variation of the output voltage is 7.5% with varying temperature from \ulcorner20˚c to 60˚c. But, after annealing of SiO2 crystal, the output voltage variation is improved within 1%error.

• Journal of Technologic Dentistry
• /
• v.26 no.1
• /
• pp.115-128
• /
• 2004

In this study, optical and mechanical properties were investigated with 4 kinds of commercial dental enamels. As a result of EDS analysis $SiO_2,\;Na_{2}O,\;Al_{2}O_3\;and\;K_{2}O$ were the main components of commercial dental enamels. In case of H specimen, content of $SiO_2\;and\;K_2O$ were more than that of another specimens. Starting powder and fired specimens were glass ceramics which were consist of amorphous phase and leucite (crystalline) phase. Crystallization did not occurred during firing process, since the XRD peak intensity was similar between starting powder and fired specimens. As a result of differential thermal analysis, $T_g$ and crystalline temperature was varied with composition in the range of $548\sim576^{\circ}C$ and $735\sim780^{\circ}C$ respectively. 0.5mm thickness dental enamel specimens showed sufficient translucent properties. However, transmittance and reflectance were lower than 5% result from scattering due to the refractive index difference between glass and crystalline phase. 3 point bending strength was in the range of 73.9$\sim$101.8MPa which was similar or slightly higher than enamel of natural teeth and Vickers hardness was higher than enamel of natural teeth more than 100.

• Proceedings of the KIEE Conference
• /
• 1999.11a
• /
• pp.31-34
• /
• 1999

In the present study, we fabricated stoichiometric $(Ba_{1-x}Sr_x)TiO_3$ thin films at various substrate temperature and contents using of magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/$SiO_2$/Si). The substate temperature deposited at 200[ $^{\circ}C$], 400[$^{\circ}C$] and 600[$^{\circ}C$] and crystalline BST thin films show above 400[$^{\circ}C$]. Also, the composition of $(Ba_{1-x}Sr_x)TiO_3$ thin films deposited on Si wafer substrate at 400[$^{\circ}C$] were closed to stoichiometry($1.015{\sim}1.093$ in A/B ratio), but compositional deviation from a stoichiometry is larger as $SrCO_3$ is added. The drastic decrease of dielectric constant and increase of dielectric loss in $(Ba_{1-x}Sr_x)TiO_3$thin films is observed above 100[kHz]. V-I characteristics of $(Ba_{1-x}Sr_x)TiO_3$ thin films show the decrease of leakage current with the increase of $SrCO_3$ contents.

• Journal of the Korean Electrochemical Society
• /
• v.3 no.4
• /
• pp.200-203
• /
• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

• Journal of the Korean Electrochemical Society
• /
• v.17 no.1
• /
• pp.49-56
• /
• 2014

As an electrolyte additive, the effects of lithium bis(oxalate)borate (LiBOB) on the electrochemical properties of a carbon-coated silicon monoxide (C-coated SiO) negative electrode are investigated. The used electrolyte is 1.3M $LiPF_6$ that is dissolved in ethylene carbonate (EC), fluoroethylene carbonate (FEC), and diethyl carbonate (DEC) (5:25:70 v/v/v) with or without 0.5 wt. % LiBOB. In the LiBOB-free electrolyte, the film resistance is not so high in the initial period of cycling that lithiation is facilitated to generate the crystalline $Li_{15}Si_4$ phase. Due to repeated volume change that is caused by such a deep charge/discharge, cracks form in the active material to cause a resistance increase, which eventually leads to capacity fading. When LiBOB is added into the electrolyte, however, more resistive surface film is generated by decomposition of LiBOB in the initial period. The crystalline $Li_{15}Si_4$ phase does not form, such that the volume change and crack formation are greatly mitigated. Consequently, the C-coated SiO electrode exhibits a better cycle performance in the later cycles. At an elevated temperature ($45^{\circ}C$), wherein the effect of film resistance is less critical, the alloy ($Li_{15}Si_4$ phase) formation is comparable for the LiBOB-free and added cell to give a similar cycle performance.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1720-1723
• /
• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Electrical & Electronic Materials
• /
• v.10 no.3
• /
• pp.284-288
• /
• 1997

FT-IR and FT-Raman spectra were measured for 15Li$_{2}$O.3Al$_{2}$O$_{3}$.78SiO$_{2}$. 4K$_{2}$O glass system after UV irradiations. Optimum UV irradiation time of Li$_{2}$O.SiO$_{2}$ crystalline phase was 60 seconds and crystalline phase of Li$_{2}$O.SiO$_{2}$ was leached out on 5% HF. 977 cm$^{1}$ band of FT-Raman spectra can be attributed to two-non bridging oxygen in unit cell for 1 hour and optimum crystallization was confirmed for 3 hrs, 630.deg. C.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.396-401
• /
• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

• Journal of the Korean Electrochemical Society
• /
• v.9 no.3
• /
• pp.107-112
• /
• 2006

Si-C composites were prepared by the carbonization of silicon powder covered by polyaniline(PAn). Physical and electrochemical properties of the Si-C composites were characterized by the particle size analysis, X-ray diffraction technique, scanning electron microscope, and electrochemical test of battery. The average particle size of the Si was increased by the coating of PAn and somewhat reduced by the carbonization to give silicone-carbon composites. XRD analysis' results were confirmed co-existence of crystalline silicon and amorphous-like carbon. SEM photos showed that the silicon particle were well covered with carbonacious materials depend on the PAn content. Si-C|Li cells were fabricated using the Si-C composites and were tested using the galvanostatic charge-discharge test. Si-C|Li cells gave better electrochemical properties than that of Si|Li cell. Si-C|Li cell using the Si-C from HCl undoped PAn Precursor showed better electrochemical properties than that from HCl doped PAn Precursor. Using the electrolyte containing FEC as an additive, the initial discharge capacity was increased. After that the galvanostatic charge-discharge test with the GISOC(gradual increasing of the state of charge) condition was carried out. Si-C(Si:PAn:50:50 wt. ratio)|Li cell showed 414 mAh/g of the reversible specific capacity, 75.7% of IIE(initial intercalation efficiency), 35.4 mAh/g of IICs(surface irreversible specific capacity).