• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.293-300
• /
• 1996

A continuous growth method (Orr's method) were developed to grow LiNbO3 single crystals. The optimum growth condition established are as follows; When the controlled temperature of a platinum crucible were 1190℃∼1210℃, the pulling rate was 2 mm/hr, the feeding rate was 1.5∼2.5 g/hr, and the rotation speed was 20 rpm. The phase and growth orientation of the grown LiNbO3 crystals wer characterized by a X-ray diffraction method. The overflowing phenomena, which induced cracking into the grown crystal during the process, was effectively suppressed by the control of the growth parameter.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.33 no.5
• /
• pp.447-454
• /
• 2009

Rate-independent crystal plasticity model suffers from the non-uniqueness of activated slip systems and the determination of the shear slip rates on the active slip systems. In this paper, a time-integration algorithm which circumvents the problem of the multiplicity of the slip systems was developed and implemented into the user subroutine VUMAT of a commercial finite element program ABAQUS. The magnitude of the slip shears on the active slip systems in f.c.c Cu single crystal aligned with the specific crystallographic orientation was investigated to validate our solution procedure. Also, texture developments under various deformation modes such as simple compression, simple tension and plane strain compression were compared with the results of the rate-dependent model by using the rate-independent crystal plasticity model. The computation time employing the rate-independent model is much more reduced than the those of the rate-dependent model.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.4
• /
• pp.78-82
• /
• 2021

The Ga₂O₃ single crystal was grown through a floating zone method, and its structural and optical properties were instigated. It has a monoclinic crystal structure with a (100) crystal orientation and an optical band gap energy of 4.6 eV. It showed an average transmittance of 70% in the visible region. At room temperature, its photoluminescent spectrum showed three different peaks: the ultraviolet at 360 nm, the blue-green at 500 nm, and the red peaks at 700 nm. Especially, at liquid nitrogen temperature, the ultraviolet peak was optically active while the others were quenched.

• Proceedings of the Korean Fiber Society Conference
• /
• 1987.06a
• /
• pp.12-13
• /
• 1987

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 1998.05a
• /
• pp.138-138
• /
• 1998

• Journal of IKEEE
• /
• v.28 no.3
• /
• pp.261-270
• /
• 2024

In this study, a lanthanum gallium oxide (LaGaO) solution was prepared using a sol-gel method. By simply forming a LaGaO thin film through adjusting the curing temperature after applying the solution onto the substrate using a brush coating process, the potential for use as a liquid crystal (LC) alignment film in the LC display industry was validated. Through optical microscope observation, it was confirmed that the LC molecules were uniformly aligned as the curing temperature of the LaGaO thin film increased. It was confirmed that the LaGaO thin film cured at 230℃ had low pretilt angle, and that LaGaO particles were formed in a single direction as observed through an atomic force microscope. Through X-ray photoelectron spectroscopy, it was found that the LaGaO metal oxide thin film was well formed. Finally, it has been confirmed that LaGaO metal oxide has the potential as a novel LC alignment film material, as it exhibits excellent electrical and optical properties, along with high optical transmittance.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.4
• /
• pp.543-548
• /
• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• Journal of the Korean Society for Heat Treatment
• /
• v.22 no.3
• /
• pp.155-161
• /
• 2009

An investigation of the deformation behavior of ${\gamma}'-Ni_3Al$ single crystals containing fine dispersion of disordered ${\gamma}$ particles was performed for several different crystal orientations. Deformation structures were observed by the weak-beam method of transmission electron microscopy (TEM). The critical resolved shear stress (CRSS) for (111) [$\bar{1}$01] slie. increases with increasing temperature in the temperature range where (111) slip operates. The CRSS for (111) [$\bar{1}$01] slip is dependent on crystal orientation in the corresponding temperature range. The temperature where the strenjlth reaches a maximum is dependent on crystal orientation; the higher the ratio of the Schmid factors of (010) [$\bar{1}$01] to that of (111) [$\bar{1}$01], the higher the peak temperature. The peak temperatures were increased by the precipitation of y particles for the samples of all orientations. Electron microscopy of deformation induced dislocation arrangements under peak temperature has revealed that most of dislocations are straight screw dislocations. The mobility of screw dislocations decreases with increasing temperature. Above the peak temperature, dislocations begin to cross slip from the (111) [$\bar{1}$01] slip system to the (010) [$\bar{1}$01] slip system, thus decreasing the strength.

• Journal of Magnetics
• /
• v.9 no.4
• /
• pp.116-120
• /
• 2004

Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

• Journal of the Korean Magnetics Society
• /
• v.16 no.5
• /
• pp.249-254
• /
• 2006

CoFeNi alloys are some of the most studied soft magnetic materials because of their superial properties over FeNi alloys as write head core materials in HDD and MEMS. We studied the effect of magnetic property according to size and orientation of crystal for electroplated Co-Fe-Ni alleys. In case of heat treated ternary alloy, it affect the change of crystal size and structure. In this study, it intends to improve the magnetic properties of CoFeNi thin film by heat treatment. Minimized coercivity and increased magnetization are due to heat treatment from $300^{\circ}C\;to\;400^{\circ}C$. As a bcc phase formation, it grow to amount of magnetization.