• Title/Summary/Keyword: Crystal grain size

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Effects of Crystal Grain Size and Particle Size on Core Loss For Fe-Si Compressed Cores

  • Takemoto, Satoshi;Saito, Takanobu
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1183-1184
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    • 2006
  • Core loss of soft magnetic powder cores have been focused on to achieve high efficiency of power supplies. In this study the effects of crystal grain size on core loss were investigated by changing heat treatment conditions. It was found that core loss is influenced by crystal grain size because eddy current loss decreased and hysteresis loss increased by making crystal grain size smaller, and it is also influenced by particle size.

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Study on the relationship between Plastic Deformation and Crystal Grain Change in Warm Forging (온간 단조기에서의 소성변형과 결정입자 변화와의 관계)

  • 이해영;제진수;강성수
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1995.06a
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    • pp.100-123
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    • 1995
  • The relationship between plastic deformation and crystal grain change in warm forging processes of SM100 carbon steel is studied. If the carbon steel is deformed in warm forging temperature (about recrystallization range), the crystal grain and cementite of the internal part are changed, so material properties are changed. Some experimental values, such as the elliptic degree of cementite, the grain size of cementitie and ferrite grain size, are investigated. When the plastic deformation proceeds, the elliptic degree of cementite becomes large, the grain size of cementite particle is small, and the size of ferrite grain appears fine by recrystallization. The elliptic degree of cementite has a considerable effect on formability. The distribution of effective strain in the forging is calculated by the rigid visco-plastic FEM analysis. The effective strain distribution obtained from the FEM simulation is compared with the experimental result. At effective strain 0.3 dynamic recovery and dynamic recrystallization begin, over 2.5 the organization of material has better quality that is suitable for the following cold forming.

Study on the Relationship between Plastic Deformation and Crystal Grain Change in Warm Forging (온간단조에서의 소성변형과 결정입자 변화와의 관계)

  • Je, Jin-Su;Kim, Jae-Hun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.2
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    • pp.461-472
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    • 1996
  • The relationship between plastic deformation and crystal grain change in warm forging processes of SM10C carbon steel is studied. If the carbon steel is deformed at warm forging temperature(about recrystallization range), material properties are changed due to microstructural chanre of the crystal grain and cementite of the internal part. Some experimental values are investigated in terms of the elliptic degree of cementite, the grain size of cementite and ferrite grain size. When plastic deformation proceeds, the elliptic degree of cementite becomes larger and the grain size of cementite particle becomes small. In addition, the size of ferrite grain becomes fines by recrystallization. The elliptic degree of cementite has a considerable effect on formability. The distribution of effective strain in the forging was calculated by the rigid visco-plastic FEM analysis. The effective strain distribution obtained from the FEM simulation is compared with the experimental result, At the level of effective strain 0.3, dynamic recovery and dynamic recrystallization begin and at the level of over 2.5, the organization of material has better internal structure that is suitable for the following cold forming.

Abnormal grain growth of ZnO ceramics (ZnO 세라믹스 거대입성장)

  • Kim, Young Jung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.6
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    • pp.251-256
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    • 2019
  • In the process of ZnO ceramic sintering at a temperature of 1385℃, higher than the normal sintering temperature, some grains were growth up to mm scale. When sintered at 1400℃ for 8 hours, the size of the grains that are not involved in the abnormal growth is as large as 30~40 ㎛, but the size of the abnormal grown grain reaches 1,000 ㎛, which is more than 10,000 times bigger in volume than the normal one within 8 hr growth. As a cause of rapid and abnormal grain growth, primary particle size distribution, compaction density variation within sample and doping of impurities could be considered. The primary particle size distribution could be considered main reason for abnormal grain growth but no solid evidence was obtained. Through the observation of the microstructure, it is presumed that the giant grains grow absorbing the neighbor grains through a grain rotation process.

A Study on the CdTe Single Crystal Growth by Vertical Bridgman Method (수직 Bridgman 법에 의한 CdTe 단결정 성장에 관한 연구)

  • Lee, Jong-Ki;Kim, Wook;Baik, Hong-Koo
    • Journal of Korea Foundry Society
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    • v.10 no.4
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    • pp.324-331
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    • 1990
  • The single crystal of CdTe was grown by modified 6 zone Bridgman method under the conditions of excess Te and excess Cd. To prevent the constitutional supercooling, the crystal growth was done under the temperature gradient of $17^{\circ}C/cm$ in front of the solid /liquid interface and the growth rate was 3mm/hr. The grain morphologies and the growth mechanism were investigated in excess Te and excess Cd conditions. The grain size of excess Te crystal was increased with an increase of the distance from the tip but, in the case of excess Cd crystal, single crystal was not obtained because of the cavities due to the excess Cd vapors so that the grain size was not increased with an increase of the distance from the tip. In addition, the growth of single crystal of CdTe was done with repeated necking ampoule. It was found that the necking had no effects on the grain selection because the cavities trapped in the necking portion acted as heterogeneous nucleation sites.

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A study on the Poly-$Si_{1-x}Ge_x$ thin film deposition(II) Variation of surface roughness, grain size and electrical property with deposition parameters (다결정 $Si_{1-x}Ge_x$박막 증착에 관한 연구(II) 증착변수에 따른 표면거칠기, 결정립크기 및 전기적성질 변화)

  • 이승호;어경훈;소명기
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.1
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    • pp.64-72
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    • 1998
  • In this work, we have investigated the change of surface roughness, grain size and crystallinity of Poly-$Si_{1-x}Ge_x$ films deposited with the variation of deposition parameters (temperature, pressure, Ge composition ) and the effect of these results on the electrical resistivity. The crystallinity and the grain size were increased with increasing deposition temperature and Ge composition. Also, the electrical resistivity was decreased by enhanced grain size, while the surface roughness was increased. With increasing deposition pressure, the crystallinity was increased, but the grain size and the cluster size were decreased, by which the surface roughness was decreased. And the electrical resistivity was increased. Based on the effect of the crystallinity and the grain size on the electrical resistivity, it was founded that the electrical resistivity was depend on the grain size rather than the crystallinity.

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Fabrication of a large grain YBCO bulk superconductor by homo-seeding melt growth method

  • Lee, Hee-Gyoun
    • Progress in Superconductivity and Cryogenics
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    • v.24 no.3
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    • pp.35-40
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    • 2022
  • To fabricate large grain YBCO bulk superconductors by melt process, Sm123 single crystal with a high melting point are mostly used as seeds. However, it also uses Y123 film deposited on MgO single crystal substrate. This study investigated the growth behavior of the Y123 grain during a melt process when single grain YBCO bulk was used as a seed. Single grain Y123 bulk was grown when the seed size was small. When the seed size was relatively large, multiple grains were grown but the grains were still large. Y123 seed crystal was completely decomposed during high temperature anneal at 1040℃ and new Y123 crystals were nucleated during a slow cooling stage below a peritectic temperature. Thereafter, newly formed Y123 crystals from the seed area are thought to grow into the Y1.8 powder compact. The crystallographic orientations of newly nucleated Y123 grains are independent of the crystallographic orientation of Y123 seed. It is thought that the crystallographic orientation of newly nucleated Y123 crystal can be controlled by using Y211-free Y123 single crystal as a seed of homo-seeding melt growth.

The Study of Microstructure Influence at Fretting Contacts using Crystal Plasticity Simulation (결정 소성 시뮬레이션을 이용한 프레팅 접촉에서의 마이크로 구조 영향에 관한 연구)

  • Ko, Jun-Bin;Goh, Chung-Hyun;Lee, Kee-Seok
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.8 s.173
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    • pp.84-91
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    • 2005
  • The role of microstructure is quite significant in fretting of Ti-6Al-4V since its material properties depend strongly on crystallographic texture. In this study, we adopt crystal plasticity theory with a 2-D planar triple slip idealization to account fur microstructure effects such as grain orientation distribution, grain geometry, as well as $\alpha$ colony size. Crystal plasticity simulations suggest strong implications of microstructure effects at fretting contacts.

The optimum condition of the powder synthesis and sintering for the floatign zone crystal growth of $LiNbO_3$ (Floating zone법에 의한 $LiNbO_3$ 단결정 성장을 위한 최적 원료분말 합성 및 소결 조건)

  • Cho, Hyun;Shim, Kwang-Bo;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.121-128
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    • 1996
  • The optimum conditons were experimentally established for the powder synthesis and sintering of the feed-rods for $LiNbO_3$ crystal growth by a floating zone method. At the lower synthesis temperatures(700, $ 800^{\circ}C$) the minor amounts of $Li_2CO_3$ and $Nb_2O_5$ were present in the synthesized $LiNbO_3$ powder and at the higher temperature the particle size increased which is not favorable for the sintering process for the feed-rods. $LiNbO_3$ powder synthesized at $950^{\circ}C$ for 12 hours was found to be the best because it contains only the$LiNbO_3$ phase with the small particle size and uniform particle size distribution. As the sintering temperature and the soaking time increase, the sintered feed-rods exhibited the higher sintered density and grain growth phenomena. The $LiNbO_3$ feed rods sintering at $1100^{\circ}C$ for 2 hours were found to have the best microstructure for the precursor feed-rods of the floating zone crystal growth because of their higher density, small grain size and uniform particle size distribution. As the sintering temperature and the soaking time increase, the sintered feed-rods exhibited the higher sintered density and grain growth phenomena. The $LiNbO_3$ feed rods sintering at $1100^{\circ}C$ for 2 hours were found to have the best microstructure for the precursor feed-rods of the floating zone crystal growth because of their density, small grain size and uniform grain size distribution.

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Crystal structure, microstructure, and low-loss dielectric property of MgO-added (Ca,Sr)(Zr,Ti)O3 (MgO가 첨가된 (Ca,Sr)(Zr,Ti)O3의 결정구조, 미세구조 및 저손실 유전특성)

  • Do-Hyeok Lee;Kyoung-Seok Moon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.6
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    • pp.261-267
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    • 2023
  • Crystal structure, microstructure, and dielectric properties of the (Ca, Sr)(Zr, Ti)O3 (CSZT) system has been studied as a function of sintering temperature and MgO addition for microwave applications. A single-phase CSZT powder with the orthorhombic crystal structure was obtained by the solid-state reaction method. The powder compacts were sintered at 1200℃, 1300℃, and 1400℃ respectively. All the sintered samples had a single-phase orthorhombic crystal structure and grain size increased with sintering temperature. In the case of 1 mol% MgO addition, the orthorhombic crystal structure was the main phase; however, a secondary phase appeared during sintering at 1400℃, as determined by EDS analysis. At 1400℃, the undoped and MgO-doped CSZT had almost similar grain size distribution and densification but the grain size distribution became slightly narrow. The MgO-doped CSZT showed excellent low-loss dielectric properties: εr = 34.14, tanδ = 0.00047, τε = -3.58 ppm/℃ at 1 MHz.