• Title/Summary/Keyword: Crystal Orientation

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Pixel-Isolation Walls of Liquid Crystal Display Formed by Anisotropic Photoreaction of the Prepolymers Containing Cinnamate Moiety

  • Jung, Eun-Ae;Sung, Shi-Joon;Cho, Kuk-Young;Kim, Dae-Hwan;Son, Dae-Ho;Kang, Jin-Kyu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.879-882
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    • 2009
  • A pixel isolation wall of liquid crystal display is fabricated by the anisotropic photoreaction of a cinnamate based prepolymer. The various oligomers containing a cinnamate moiety were synthesized and used for the formation of the pixel isolation wall. The anisotropic photoreaction of cinnamate moiety was closely related with the liquid crystal orientation at the polymer wall boundary.

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Electro-optical Properties of Twisted Nematic Liquid Crystal Displays Fabricated with TIPS-pentacene Doping

  • Lee, Jin-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.2
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    • pp.82-85
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    • 2013
  • This paper introduces 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) doped liquid crystal (LC) alignment properties on a rubbed polyimide (PI) layer as a function of the doping concentration of TIPS pentacene. Pretilt angles, photomicrographs, and electro-optical properties of TIPS pentacene doped LCs were comparable to those of pure LCs. However, TIPS pentacene in a LC medium supported twisted nematic-liquid crystal displays (TN-LCDs) to improve electro-optical properties. The threshold voltages observed in the TN cells decreased as the TIPS pentacene concentration increased. In addition, suitable response times were observed in TN cells.

A Study on the Liquid Crystal Orientation Characteristics of the Inorganic NiOx Film with Aligned Nanopattern Using Imprinting Process (무기막 NiOx의 정렬 패턴 전사를 이용한 액정의 배향 특성 연구)

  • Oh, Byeong-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.5
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    • pp.357-360
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    • 2019
  • We demonstrate an alignment technology using an imprinting process on an inorganic NiOx film. The aligned nanopattern was fabricated on a silicon wafer by laser interference lithography. The aligned nano pattern was then imprinted onto the sol-gel driven NiOx film using an imprinting process at an annealing temperature of $150^{\circ}C$. After the imprinting process, parallel grooves had been formed on the NiOx film. Atomic force microscopy and water contact angle measurements were performed to confirm the parallel groove on the NiOx film. The grooves caused liquid crystal alignment through geometric restriction, similar to grooves formed by the rubbing process on polyimide. The liquid crystal cell exhibited a pretilt angle of $0.2^{\circ}$, which demonstrated homogeneous alignment.

Fabrication of MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si Substrate for Pyroelectric IR Sensor (초전형 적외선 센서를 위한 MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si 기판 제작)

  • Kim, Sung-Woo;Sung, Se-Kyoung;Ryu, Jee-Youl;Choi, Woo-Chang;Choi, Hyek-Hwan;Lee, Myoung-Kyo;Kwon, Tae-Ha
    • Journal of Sensor Science and Technology
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    • v.9 no.2
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    • pp.90-95
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    • 2000
  • The substrate for pyroelectric IR sensor which has orientation similar to MgO single crystal was fabricated by depositing the MgO thin film on $Si_3N_4/SiO_2/Si_3N_4$/Si. The MgO thin film was deposited by RF magnetron sputtering. The c-axis orientation of PLT thin film deposited on Pt/MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si substrate was investigated. The MgO thin film deposited at $500^{\circ}C$ at a gas pressure of 30 mTorr with RF power of 160 W exhibited a good a-axis orientation. The PLT thin films deposited on these substrates also exhibited c-axis orientation similar to the PLT thin films deposited on MgO single crystal substrate.

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Growth of Gallium Oxide Thin Film on c-, a-, m-, r-Plane Sapphire Substrates Using Mist Chemical Vapor Deposition System (미스트 화학기상증착법을 이용한 c면, a면, m면, r면 사파이어 기판 위의 산화갈륨 박막 성장 연구 )

  • Gi-Ryeo Seong;Seong-Ho Cho;Kyoung-Ho Kim;Yun-Ji Shin;Seong-Min Jeong;Tae-Gyu Kim;Si-Young Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.1
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    • pp.74-80
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    • 2023
  • Gallium oxide (Ga2O3) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600℃ was applied for Ga2O3 thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga2O3 featured rhombohedral crystal structures and well-aligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga2O3-based electronics applications.

A study on crystal growth and properties of high quality DAST (고품질 DAST 결정성장과 특성에 관한 연구)

  • 윤선웅;연석주;김종흠
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.1
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    • pp.12-16
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    • 2004
  • In this study, we have investigated the development of the crystal growth stability and reproducibility for large and high-quality DAST. DAST crystal were grown from a saturated methanol solution by a slow cooling method and DAST was synthesized by the condensation of 4-methyl-n-methyl pyridinum tosylate, which was prepared from 4-pocoline and methyl toluenesulponate and 4-N-dimethyl amino-bezaldehyde in the presence of piperidine. We had synthesized DAST crystals in dry Argon atmosphere in order to avoid the formation of hydride organge co-crystals, DAST$.$$H_2O$. Since DAST molecules crystallize in a humid atmosphere, crystal structure become centrosymmetric, and then second order NLO (nonlinear optical) properties would be disappeared. We fixed the growth orientation of DAST crystal (001) surface. The crystal growth was proceeded at a cooling rate of $H_2O$/day and the cooling period is for 4 days. The dimensions of seed crystal was $2.5\times 3.6\times0.4\textrm{mm}^3$ and we have obtained a DAST crystal with the dimension of $10\times 10.5\times3.0\textrm{mm}^3$. The color of grown DAST crystal is red and it's surface appears to be metallic green.

Flexible Liquid Crystal Displays Using Liquid Crystal-polymer Composite Film and Colorless Polyimide Substrate

  • Kim, Tae Hyung;Kim, Minsu;Manda, Ramesh;Lim, Young Jin;Cho, Kyeong Jun;Hee, Han;Kang, Jae-Wook;Lee, Gi-Dong;Lee, Seung Hee
    • Current Optics and Photonics
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    • v.3 no.1
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    • pp.66-71
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    • 2019
  • Application of liquid crystal (LC) materials to a flexible device is challenging because the bending of LC displays easily causes change in thickness of the LC layer and orientation of LCs, resulting in deterioration in a displayed image quality. In this work, we demonstrate a prototype device combining a flexible polymer substrate and an optically isotropic LC-polymer composite in which the device consists of interdigitated in-plane switching electrodes deposited on a flexible colorless polyimide substrate and the composite consisting of nano-sized LC droplets in a polymer matrix. The device can keep good electro-optic characteristics even when it is in a bending state because the LC orientation is not disturbed in both voltage-off and -on states. The proposed device shows a high potential to be applicable for future flexible LC devices.

Effect of Annealing on c-axis Orientation of $PbTiO_3$ Thin Films by D.C magnetron Reactive Sputtering (D.C Magnetron Reactive Sputtering 법으로 증착한 $PbTiO_3$ 박막의 열처리에 따른 c-축 배향성의 변화)

  • 이승현;권순용;최한메;최시경
    • Journal of the Korean Ceramic Society
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    • v.33 no.7
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    • pp.802-808
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    • 1996
  • PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.

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Liquid Crystal-based Imaging of Biomolecular Interactions at Roller Printed Protein Surfaces

  • Park, Min-Kyung;Jang, Chang-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.31 no.5
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    • pp.1223-1227
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    • 2010
  • In this study, the orientational behavior of thermotropic liquid crystals (LC) supported on a film of protein receptors was examined. Avidin was roller printed and covalently immobilized onto the surface of gold using NHS/EDC chemistry. The orientation of nematic 4-cyano-4'-pentylbiphenyl (5CB) was found to be parallel to the plane of the printed avidin surface before incubation with a solution of biotin. However, protein-receptor complexation induced a random orientation of 5CB, where protein-receptor complexes disturbed the nanoscale topography of the printed protein surface. Atomic force microscopy and ellipsometry was used to confirm printing and the specific interaction of proteins. These results demonstrate that the combination of LC and roller printing can be used to detect specific interactions between biomolecules by manipulating the orientational behavior of LC to the printed protein surfaces.

A study on the c-axis orientation of ZnO thin film deposited on glass substrates (유리기판에 제작한 ZnO 박막의 c축 배향성에 관한 연구)

  • 고상춘;이종덕;송준태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.9-13
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    • 1995
  • In this paper, Zinc Oxide films, with a high degree of c-axis orientation, have been grown on glass substrates by a rf magnetron sputtering. The maximum crystal orientation was found to occur with substrate temperature 150$^{\circ}C$, input power 190W, oxygen rate 50%, target-substrate distance 55mm. It is proposed to achieve high-resistivity ZnO films by increasing the annealing temperature. The piezoelectric layers, preferred oriented with (002) perpendicular to the layer with 4.9$^{\circ}$, could be obtained by the annealing temperature 300$^{\circ}C$ in oxygen atmosphere. It is indicated that the relative permittivity is range from 8.9 to 9.8 in the frequency ranging from 10KHz to 5MHz.

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