• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.838-841
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• 2006

Orientational alignment patterns proved that they are very useful for realizing diverse properties of liquid crystals. Here we tried to produce the patterns combining interfered laser light and double irradiations. A photo-isomerizable polymer doped with azo dye, which induce uniform liquid crystal alignment to the uniform laser irradiation, was used as the alignment layer. Double irradiations into two orthogonal directions brought the orientation patterns similar to the checkerboard. It indicates the possibility of bistability on those patterns.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.422-425
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• 2006

Recently, studies on orientation of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (LC) and CNTs effects on electro-optic characteristics of the LC device have been performed. In this paper, we summarize interaction nature between CNT and LC, local distortion of the LC director field by motion of CNTs, and effects on electro-optic performances of LC device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.214-217
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• 2004

숭화법을 이용한 탄화규소(Silicon carbide) 단결정 성장시 사용되는 원료의 상(phase)이 단결정 성장에 미치는 영향을 알아보기 위해 알파형 탄화규소 분말(${\alpha}-SiC$ powder)과 베타형 탄화규소 분말(${\beta}-SiC$ powder)을 각각 사용하였다. 알파형 탄화규소 분말을 사용한 경우에 단결정(single-crystal)을 성장할 수 있었으나, 베타형 탄화규소 분말을 사용하였을 때에는 다결정(poly-crystal)이 성장되었다. 다결정 형성요인에 관한 EPMA 분석결과, 베타형 탄화규소 분말의 탄소에 대한 실리콘의 원소조성비$(N_{Si}/N_C\;=\;1.57)$가 알파형 탄화규소 분말의 경우보다$(N_{Si}/N_C\;=\;0.81)$ 높음을 확인하였다. 따라서 흑연도가니(crucible) 내부의 실리콘 원자가 알파형 탄화규소 분말을 사용하는 경우보다 높은 과포화상태가 되어 종자정 표면에 미세한 실리콘 액적(droplet)이 중착되고 이것으로부터 일정하지 않은 방향성(random orientation)을 갖는 탄화규소 다결정(다양한 방향성을 갖는 다형 포함)이 성장한 것으로 실리콘과 탄소 원소에 대한 EPMA 지도(map) 결과를 통해 확인할 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.57-62
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• 1994

$YbFeCoO_4$ single crystal was grown by floating zone method. The atmospheric condition of the growth was controlled in air and the growth rate was 1~2 mm/hr. After melting the feed rod of the composition of $YbFeCoO_4$, $YbFeCoO_4$ was decomposed to $YbFeCoO_4$ and CoO phase in the initial state of the growth. The liquid composition, however, changed to the direction of the eutectic point along the liquidus line and then stopped at the point in which $YbFeCoO_4$ single crystal could be grown. The growth direction of the crystal was preferred orientation [110], perpendicular to the c-axis in the hexagonal system due to using the polycrystalline seed.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.157-159
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• 1998

Sapphire crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molybdenum container, growth atmosphere, temperature gradient and orientation of see on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 90 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were colorless, transparent and could not be observed and macroscopic defects, such as bubbles, cracks, twins and mosaic structure. With the grown crystals, prototypes of sapphire substrate for blue wafers were characterized. As a result, we can get hight quality of sapphire wafers with c-axis, 1.5 inches in diameters and 0.33 mm in thickess.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.7-10
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• 1998

L-Histidine tetrafluoroborate single crystals have been grown from the aqueous solution. The profitable pH value to grow large crystals, the relative flow rate to get clear crystals, crystals habit and the orientation of the obtained crystal have been clarified. We have also demonstrated that the LHBF crystal has very high damage threshold which is potentially good for generation of the phase conjugated waves.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.224-229
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• 2013

Vanadium oxide thin films were deposited on $c-Al_2O_3$ (001) substrate by in-situ RF magnetron sputtering. Oxygen partial pressure was adjusted to prepare thermochromic $VO_2$ phase. X-ray diffraction patterns and scanning electron microscopy convincingly showed that plate-like $V_2O_5$ grains were changed into round-shape $VO_2$ grains as oxygen partial pressure decreased. After the optimized deposition conditions were fixed, the effect of substrate temperature and orientation on the optical properties of $VO_2$ thin films was analyzed.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.84-91
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• 2005

The role of microstructure is quite significant in fretting of Ti-6Al-4V since its material properties depend strongly on crystallographic texture. In this study, we adopt crystal plasticity theory with a 2-D planar triple slip idealization to account fur microstructure effects such as grain orientation distribution, grain geometry, as well as $\alpha$ colony size. Crystal plasticity simulations suggest strong implications of microstructure effects at fretting contacts.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.10a
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• pp.539-543
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• 2014

This work investigated the electromechanical performance of a cantilevered vibration energy harvester incorporating the single crystal PMN-PZT, manufactured with the most recent technology of solid-state single crystal growth. Single crystal PMN-PZTs with two different crystallographic axes such as [011] and [001] were considered. For the [011] orientation, because material properties such as the stiffness, piezoelectric strain coefficients are not the same in the directions normal to the crystallographic axis, the effects of the transversely anisotropy on the magnitude and frequency bandwidth of output power were also analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.334-337
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• 1996

Si anisotropic etching is a key technology for micromachining. The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solution are their full compatibility with IC process. In this work the anisotropic etching of single crystal Si in a TMAH (($CH_3$)$_4$NOH) based solution was studied. The influence of the addition of IPA to TMAH solution on their etching characteristics was also presented. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant concentration. The etch rates of (100) oriented Si crystal planes decreased linearly with increasing the IPA concentration, The etched (100) planes were covered by Pyramidal-shaped hillocks below 15 wt.%, but very smooth surfaces were obtained above 20 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes.