• 대한기계학회논문집A
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• 제33권5호
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• pp.447-454
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• 2009

Rate-independent crystal plasticity model suffers from the non-uniqueness of activated slip systems and the determination of the shear slip rates on the active slip systems. In this paper, a time-integration algorithm which circumvents the problem of the multiplicity of the slip systems was developed and implemented into the user subroutine VUMAT of a commercial finite element program ABAQUS. The magnitude of the slip shears on the active slip systems in f.c.c Cu single crystal aligned with the specific crystallographic orientation was investigated to validate our solution procedure. Also, texture developments under various deformation modes such as simple compression, simple tension and plane strain compression were compared with the results of the rate-dependent model by using the rate-independent crystal plasticity model. The computation time employing the rate-independent model is much more reduced than the those of the rate-dependent model.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.78-82
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• 2021

The Ga₂O₃ single crystal was grown through a floating zone method, and its structural and optical properties were instigated. It has a monoclinic crystal structure with a (100) crystal orientation and an optical band gap energy of 4.6 eV. It showed an average transmittance of 70% in the visible region. At room temperature, its photoluminescent spectrum showed three different peaks: the ultraviolet at 360 nm, the blue-green at 500 nm, and the red peaks at 700 nm. Especially, at liquid nitrogen temperature, the ultraviolet peak was optically active while the others were quenched.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 1987년도 제2차학술발표초록집
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• pp.12-13
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• 1987

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.138-138
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• 1998

• 전기학회논문지
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• 제67권4호
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• pp.543-548
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• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• 열처리공학회지
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• 제22권3호
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• pp.155-161
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• 2009

An investigation of the deformation behavior of ${\gamma}'-Ni_3Al$ single crystals containing fine dispersion of disordered ${\gamma}$ particles was performed for several different crystal orientations. Deformation structures were observed by the weak-beam method of transmission electron microscopy (TEM). The critical resolved shear stress (CRSS) for (111) [$\bar{1}$01] slie. increases with increasing temperature in the temperature range where (111) slip operates. The CRSS for (111) [$\bar{1}$01] slip is dependent on crystal orientation in the corresponding temperature range. The temperature where the strenjlth reaches a maximum is dependent on crystal orientation; the higher the ratio of the Schmid factors of (010) [$\bar{1}$01] to that of (111) [$\bar{1}$01], the higher the peak temperature. The peak temperatures were increased by the precipitation of y particles for the samples of all orientations. Electron microscopy of deformation induced dislocation arrangements under peak temperature has revealed that most of dislocations are straight screw dislocations. The mobility of screw dislocations decreases with increasing temperature. Above the peak temperature, dislocations begin to cross slip from the (111) [$\bar{1}$01] slip system to the (010) [$\bar{1}$01] slip system, thus decreasing the strength.

• Journal of Magnetics
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• 제9권4호
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• pp.116-120
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• 2004

Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

• 한국자기학회지
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• 제16권5호
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• pp.249-254
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• 2006

CoFeNi 합금은 HDD, MEMS 분야에서 head core 재료로 쓰이는 permalloy(FeNi)합금보다 뛰어난 우수한 자기적 특성을 가진 재료로써 최근 많이 연구되어지고 있다. 전기도금된 CoFeNi합금 박막의 열처리에 따른 미세구조 변화와 결정학적 특성이 자기특성에 미치는 영향을 조사하였다. 삼원계 합금을 열처리하면 전기도금 시 결정의 크기와 결정구조의 변화가 자기특성에 영향을 미친다. 이를 조사하여 열처리를 통하여 얻어지는 CoFeNi계 박막의 자기 특성을 향상시키고자 하였고, $300{\sim}400^{\circ}C$까지 열처리를 함으로써 보자력을 최소화하고 포화자화 값을 증가시켰다. 포화자화 값의 증가는 bcc상의 생성으로 야기되는 것으로 판단된다.

• 한국결정성장학회지
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• 제5권1호
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• pp.44-49
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• 1995

6H - SiC를 승화법(Sublimation Process)으로 성장하였으며, 성장 결정의 표면에서 나타난 양상에 대하여 광학 현미경을 이용하여 관찰하였다. 6H-SiC는 측면방향(Hexagonal system에서 a축 방향)으로 성장하는 속도가 seed 방향인 c축 방향보다 빠르고, 따라서 많은 성장 step을 관찰할 수 있었다. 또한, SiC 결정의 주된 결함인 micropipe는 성장 후 결정의 표면까지도 형성되고 있어, 거대한 void로 관찰되어졌다. 이것은 pore와는 다르게 구별되며, 완전한 구형의 단면을 가진다. 본 연구에서는 micropipe 및 면결함, 그리고 결정성장시의 step 형성등의 현상에 대하여 광학 현미경으로 조사형 그 결과를 보고하기로 한다.

• 한국결정성장학회지
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• 제4권1호
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• pp.76-82
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• 1994

고온용액법(high temperature solution grwth)에 의해 $K_6P_4O_13$의 flux로 부터 KTP 단결정을 성장시켰다. Inclusion이 없는 KTP 단결정을 성장시키기 위해 성방로내 온도기울기, 결정의 회전, 종자결정의 방위, 냉각속도를 조절하였다. 성장된 KTP 단결정은 inclusion이 없었으며, 크기는 $10(a){\times}28(b){\times}33(c)mm^3$ 이었다. 또한 KTP 단결정 boule의 위치에 따른 SHG 출력 특성 측정 및 TEM 분석에 의해 종자결정 주위의 광학적 불균일성의 원인을 조사하였다.