• Journal of Powder Materials
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• v.27 no.2
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• pp.139-145
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• 2020

The powder manufacturing process using the gas atomizer process is easy for mass production, has a fine powder particle size, and has excellent mechanical properties compared to the existing casting process, so it can be applied to various industries such as automobiles, electronic devices, aviation, and 3D printers. In this study, a modified A4032-xSn (x = 0, 1, 3, 5, and 10 wt.%) alloy with low melting point properties is investigated. After maintaining an argon (Ar) gas atmosphere, the main crucible is tilted; containing molten metal at 1,000℃ by melting the master alloy at a high frequency, and Ar gas is sprayed at 10 bar gas pressure after the molten metal inflow to the tundish crucible, which is maintained at 800℃. The manufactured powder is measured using a particle size analyzer, and FESEM is used to observe the shape and surface of the alloy powder. DSC is performed to investigate the change in shape, according to the melting point and temperature change. The microstructure of added tin (Sn) was observed by heat treatment at 575℃ for 10 min. As the content of Sn increased, the volume fraction increased to 1.1, 3.1, 6.4, and 10.9%.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.141-157
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• 1995

Single crystals of TeO2 with large diameter were grown by Czochralski technique with auto-diameter control system. The ratio of crystal to crucible was 60-70%. The effect of critical pulling and rotation rate on the crystal quality was studied. Optimum growth parameters for high quality crystal pulling rate was less than 1.2 mm/hr. The solid-liquid interface was convex at the rotation rate of 10-23 rpm and concave at the rotation rate of more than 25 rpm, depending on the size of crystal and crucible. The platinum concentration in the melts is one of the main factors of the constitutional supercooling and thus the bubble entrapment in the growing crystal. Growth axis was confirmed to {110} direction during the whole growth procedure. Infrared spectrometric study and dislocation density measurment by chemical etching method on the grown crystal were performed. Finally, the reasons of cooperation of striations, inclusions, and optical inhomogeneities were discussed.

• Journal of Advanced Engineering and Technology
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• v.4 no.4
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• pp.431-436
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• 2011

This study was carried out to reduce the problem during distillation process, which separate U, TRU (TRans Uranium) metal electro deposit, Cd and LiCl-KCl eutectic salt generating from LCC (Liquid Cadmium Cathode) electro winning process. The cadmium recovering apparatus was manufactured to separate for each metal using solid-liquid separation method. The apparatus consists of the first sieve for the separation of U and TRU metal electrodeposit, the second sieve for the separation of LiCl-KCl eutectic salt, cadmium collection basket, and a heating furnace. In addition, the size of each sieve is 2 mm to 3 mm. In this experiment, a metal wire was employed to replace TRU metal electrodeposit and U, which exist actually in a LCC crucible. In the solid state, The LiCl-KCl is separated at 340℃ at which the solid and the liquid of the remaining cadmium and LiCl-KCl eutectic salt coexists in each, after the metal wire separated at 500℃. As a result, it seems that it would be beneficial to set the processing condition in the distillation process with the additional treatment process of cadmium and LiCl-KCl eutectic salt.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.179-184
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• 2018

To lessen oxygen concentrations in a wafer through modifying the length of graphite heaters, we investigated the influence of relative distance from heater to quartz crucible on temperature profile of hot-zone in Czochralski silicon-crystal growth by simulation. In particular, ATC temperature and power profiles as a function of different ingot body positions were investigated for five different heater designs; (a) typical side heater (SH), (b) short side heater-up (SSH-up), (c) short side heater-low (SSH-low), (d) bottom heater without side heater (Only-BH), and (e) side heater with bottom heater (SH + BH). It was confirmed that lower short side heater exhibited the highest ATC temperature, which was attributed to the longest distance from triple point to heater center. In addition, for the viewpoint of energy efficiency, it was observed that the typical side heater showed the lowest power because it heated more area of quartz crucible than that of others. This result provides the possibility to predict the feed-forward delta temperature profile as a function of various heater designs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.175-181
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• 2005

Ingots of rutile single crystals were grown by the skull melting method, and their characteristics were compared in terms of melt-dwelling time for each melt. The method is based on direct inductive heating of an electrically conducted melt by an alternating RF field, and the heating is performed by absorption of RF energy. $TiO_2$ is an insulator at room temperature but its electric conductivity increases elevated temperature. Therefore, titanium metal ring(outside diameter : 6cm, inside diameter : 4cm, thickness 0.2cm) was embedded into $TiO_2$, powder (anatase phase, CERAC, 3N) for initial RF induction heating. Important factors of the skull melting method are electric resistivity of materials at their melting point, working frequency of RF generator and cold crucible size. In this study, electric resitivity of $TiO_2$, $(10^{-2}\~10^{-1}\;{\Omega}{\cdot}m)$ at its melting point was estimated by compairing the electric resitivities of alumina and zirconia. Inner diameter and height of the cold crucible was 11 and 14cm, respectively, which were determined by considering of the Penetration depth $(0.36\~1.13cm)$ and the frequency of RF generator.

• Journal of the Korean Ceramic Society
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• v.22 no.5
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• pp.3-8
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• 1985

$ZrO_2$ single crystals were grown by slow cooling flux method using Borax $(Na_2B_4O_7)$ and KF as flux agent. The morphology of grown crystals was observed under a petrographic microscope. And the results obtained from grow crystals were as follows : 1. $ZrO_2$ crystals grown in the present work are morphologically divided into two shapes ; tabular and den-dritic crystals. 2. The maximum size of the crystals grown reaches to $4{\times}15{\times}2mm$ on edge into length at $ZrO_2$ 15mole% Borax 50mole% and KF 35mole% 3. $ZrO_2$ single crystals grown by flux method have monoclinc structure. 4. The content of KF as flux agents was limited by 60mole% KF. Since alumina crucible was heavily damaged by increasing KF content.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.487-492
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• 1989

The microstructure and electrical properties of ZnO-Bi2O3 system with Bi2O3(0.5~5mol%) content have been investigated in relatin to sintering temperature and atmosphere. The grain size of ZnO increases sharply with Bi2O3(0.5~5mol%) content, but over 0.5mol% Bi2O3 increased less rapidly when sintered at 120$0^{\circ}C$. Electrical characteristics varied with sintering atmosphere and air-sintered conditions showed comparatively lower nonlinear exponents than the double-crucible conditions. Calculated barrier voltage was about 1.7V.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.19-22
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• 2020

The thermal evaporation source is used to prepare thin films by physical vapor deposition. Materials of metals, organic materials, were tested and explained for thermal evaporation experiments. The developed effusion cell performance depends on the type of deposition material, the size of the crucible, the performance of the reflector, etc. and the proper conditions were found by producing, comparing and analyzing several sets of effusion cell to quantitatively evaluate the performance of the cell. The effusion cell for thermal evaporation source is used to prepare thin films of Ag, Cu, Mg.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.21-25
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• 1998

An experimental investigation on flow pattern was carried out in molten Woods metal using an incorporated magnet probe to determine the velocity field in a Woods metal model of Czochralski crystal growth system. The local velocities in Woods metal were obtained 3-dimensionally at numerous positions of large crucible by measuring the voltage induced in the melt. Since there have not been a lot of the model experiments on the velocity distributions in the large size of melt with low Prandtl number for Czochralski crystal growth system, the present paper aims to give useful guidelines for e analysis of fluid flow in Czochralski growth system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.140-142
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• 2019

AlN (Aluminum Nitride) crystal which could be used to substrates for UV LEDs was grown by PVT ((Physical Vapor Transport) method. 3 inch AlN single crystal with a thickenss of 4 mm was grown using Polycrystalline seed for 120 hours. In this report, a result of 3 inch polycrystalline bulk AlN growth behavior using large size crucible and growth condition were reported.