• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.2
• /
• pp.141-148
• /
• 1999

High quality pure and Nb-doped $PbWO_{4}$ Single Crystal were grown from a 50 %~50 % mixture of Lead oxide (PbO) and Tungsten oxide $(WO_{3})$ by Czochralski method in Iridium crucible. The stoichiometric deviation correspond to the selective loss of the crystal constituents is found to be responsible for the yellowish coloration of $PbWO_{4}$. Through the X-ray powder diffraction experiment, we have investigated the lattice constant variations of each $PbWO_{4}$ crystals. We also present information on their photoluminescence (PL), optical absoption properties and Raman spectra. The temperature dependence of PL intensity and FWHM (Full Width Half Maximum) were measured in the temperature range 10 K~300 K. One observes a slight temperature dependence in the low temperature region and PL intensity decreases over 200 K by thermal quenching. The activation energy, Huang-Rhys coupling constant and inhomogenious brodenning acquired from their temperature dependence.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2004.06a
• /
• pp.137-146
• /
• 2004

Laser Induced Breakdown Spectroscopy(LIBS) system is being developed as an in-situ analysis system for the radioactive waste glass in the cold crucible melter. In order to complete the LIBS system, a spectrometer, a detector, and a laser were structured. An ESA 3000 (LLA Instruments GmbH, Germany) including a calibrated Kodak KAF-1001 CCD detector was selected as the spectrometer. A Q-switched Nd-YAG Brilliant(Quantel, France) laser was selected as an energy source. As the first research stage, the excitation temperatures of Fe(I) as a function of the detector's delay intervals(500, 1000, 1500, 2000ns) were evaluated using the Einstein-Boltzmann equation. The optimized excitation temperature of Fe (I) was 7820k at the delay time of 1500㎱ using the 532nm Nd-YAG laser pulse. This LIBS system will be optimized under the real environment vitrification facility in the near future and then used to be in-situ analyzed the glass compositions in the melter qualitatively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.5
• /
• pp.193-198
• /
• 2011

Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method. The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystal-melt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.5
• /
• pp.190-195
• /
• 2014

Because of the temperature gradient occurring during the growth of the ingot with directional solidification method, defects are generated and the residual stress is produced in the ingot. Changing the growth and cooling rate during the crystal growth process will be helpful for us to understand the defects and residual stress generation. The defects and residual stress can affect the properties of wafer. Generally, it was found that the size of grains and twin boundaries are smaller at the top area than at the bottom of the ingot regardless of growth and cooling condition. In addition to that, in the top area of silicon ingot, higher density of dislocation is observed to be present than in the bottom area of the silicon ingot. This observation implies that higher stress is imposed to the top area due to the faster cooling of silicon ingot after solidification process. In the ingot with slower growth rate, dislocation density was reduced and the TTV (Total Thickness Variation), saw mark, warp, and bow of wafer became lower. Therefore, optimum growth condition will help us to obtain high quality silicon ingot with low defect density and low residual stress.

• Journal of the Korean Ceramic Society
• /
• v.41 no.9
• /
• pp.677-683
• /
• 2004

Nd:LLM (Nd:LiLa(MoO$_4$)$_2$) single crystals for the laser host material were grown by the Czochralski method. The Nd:LLM grown single crystals cracked easily, and the reasons of cracks are generally related with phase transition, incongruent melting, chemical heterogeneity of composition, geometric thermal structures of imbalance and growth direction. We confirmed that phase transition is not observed by TG-DTA thermal analysis, and the XRD analysis revealed congruent melting in our products. It was confirmed that the volatilization of Li$_2$O composition is the important reason of chemical heterogeneity. The geometric thermal profile of the resistance furnace of our own design was controlled with a crucible height. Also, Nd:LLM crystal affected growth direction, and was the best quality in case of (101) growth direction. The distribution and effective distribution coefficient of Nd$^{3+}$ ion were accomplished by PIXE analysis.s.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.550-554
• /
• 1998

We suggested the new method of thermal screen in Bridgman-Stockbarger method to control the polygrain, the internal cavities and solid-liquid (SL) interface. $CaF_2$ single crystal of 6 inch was grown perfectly when we adopted to use a graphite pipe and a ceramic warmer in the conditions of growth rate 2 mm/hr, vertical temperature of $14^{\circ}C$ for freezing and temperature of $1324^{\circ}C$ at conical tip of crucible. The light scattering phenomena occurred by internal cavities were controlled as decreasing the freezing rate to 2 mm/hr and/or as adopting the rotation of melt (7 rpm).

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.4
• /
• pp.336-346
• /
• 1994

We studied the reaction between silicon and carbon. Silicon granules and silicon with 0.2 wt% carbon powders were prepared for sample and then they were heated up to the $1450^{\circ}C, 1550^{\circ}C, 1650^{\circ}C, 1700^{\circ}C$ and were dwelled 1 hr and 4 hrs, respectively. we studied the change of morphologies of molten silicon and the formation of SiC following the reaction withcarbon using optical microscope, SEM, and XRD. Above the melting point of silicon, oxygens are precipitated during the decomposition of quartz used crucible. SiO formed from the reaction between molten silicon and precipitated oxygen evaporated and made the surface defects. SiC were formed with the reaction between the unreacted carbon and molten silicon. Polytype of the SiC formed at the solidification interface was ${\alpha}-SiC$.

• Resources Recycling
• /
• v.21 no.5
• /
• pp.65-71
• /
• 2012

The equilibrium distribution of bismuth and lead between molten PbO-$SiO_2$ slag and bismuth phase was studied in the temperature range of $775^{\circ}C$ to $850^{\circ}C$ in a MgO crucible. The oxygen partial pressure of atmosphere was controlled by $P_{CO2}/P_{CO}$ ratio. The value of $(%PbO)_{slag}/[%Pb]_{metal}$ increased with increasing $SiO_2$ content of slag, and the value of $(%Bi_2O_3)_{slag}/[%Bi]_{metal}$ decreased with increasing $SiO_2$ content of slag. The concentration of Pb in metal increased with increasing temperature. These experimental results agreed well with the thermodynamic prediction.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.5 no.3
• /
• pp.213-220
• /
• 2007

Appropriate numerical models for the simulation of off-gas flow in hot area of the vitrification plant have been developed in this study. The models have been applied to analyze the effect of design parameters of real plant and numerical analyses have been performed for CCM(Cold Crucible Melter), pipe cooler and HTF(High Temperature Filter). At first, the effect of excess oxygen and the ratio of oxygen distribution on combustion characteristics in the CCM has been studied. Next, solidification behavior of radio nuclide in the pipe cooler has been numerically modeled and scrutinized. Finally, flow pattern in accordance with the location of off-gas entrance of the HTF has been compared.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2005.11a
• /
• pp.69-78
• /
• 2005

Appropriate numerical models for the simulation of off-gas flow in hot area of the vitrification plant have been developed in this study. The models have been applied to analyze the effect of design parameters of real plant and numerical analyses have been performed for CCM(Cold Crucible Melter), pipe cooler and HTF(High Temperature Filter) At first, the effect of excess oxygen and the ratio of oxygen distribution on combustion characteristics in the CCM has been studied. Next, solidification behavior of radio nuclide In the pipe tooler has been numerically modeled and scrutinized. Finally, flow pattern In accordance with the location of off-gas entrance of the HTF has been compared.