• Proceedings of the Korea Air Pollution Research Association Conference
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• 2003.05b
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• pp.391-392
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• 2003

한전 원자력 환경기술원에서는 중ㆍ저준위 방사성폐기물 유리화 기술의 상용화 가능성을 입증하기 위한 유리화 실증설비를 건설하여 시험 중에 있으며 이 유리화 기술은 유도 가열식 저온로(Cold Crucible Melter, CCM)에 폐기물을 투입하는 기술로서 폐기물의 부피 축소 효과와 더불어 최종 고화물로 생성되는 폐기물의 침출율이 매우 낮은 장점을 지닌다. 이와 같은 유리화 공정은 기존의 소각처리에서와 같이 폐기물의 열적 산화과정에 의해 유해오염가스와 입자성 물질이 발생된다. 따라서 이를 처리하기 위해배기체 처리공정(Off Gas Treatment System, OGTS)을 설치하여 환경 배출기준(SO$_2$300ppm, NO$_2$ 200ppm, CO 600ppm, HCI 50ppm, 분진 100mg/Nm$^3$ 등)을 만족하도록 하였고 특히 입자성 물질은 후단 OGTS나 배관내 침적으로 인한 방사성 오염을 막기 위해 CCM 후단에서 효율적으로 제거되어야만 한다. (중략)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.41-46
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• 1997

The change of flow field and the effects of convective heat transfer on the shape and location of melt/crystal interface has been studied during the crystal growth by the heat exchanger method. Although the thermal structure is stable in the crucible, the flow due to the natural convection driven by radial temperature gradient is significant, because the thermal stability is broken by the hemispherical melt/crystal interface shape. The maximum interface deflection with convection is smaller than without and the convective heat transfer should be considered to simulate the heat transfer process of heat exchanger method rigorously.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.165-172
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• 2005

본 고에서는 태양전지 모듈 원가의 60% 이상을 차지하는 실리콘 기판의 생산성을 향상시키고 그에 따라 제조단가를 저감시키기 위한 일환으로 최근 들어 일본과 프랑스를 중심으로 중점적으로 기술개발이 이루어지고 있는 EMCC법(Electro Magnetic Continuous Casting)에 의한 다결정 실리콘 잉고트의 제조기술에 관하여 연구하였다. 특히, 태양전지급의 고순도 잉고트로 제조하기 위해 높은 용융점과 낮은 전기전도도를 갖는 실리콘의 용해 및 주조 공정이 수냉되는 cold crucible 내에서 이루어지게 됨에 따라 발생하는 종래의 EMCC법의 문제점을 해결하고자, 코일전류 및 도가니 구조 등이 Joule 가열 효과 및 pinch 효과에 미치는 영향을 체계적으로 조사하였다. 연구 결과 대용량의 전원장치나 별도의 2차 가열원을 사용하지 않고서도 실리콘 원료의 가열 및 용해 효율을 현격히 향상시키며 용탕의 전 구간에 걸쳐 전자기력을 용탕의 정수압보다 큰 상태로 유지할 수 있는 EMCC용 무접촉성 도가니의 설계기술 및 이를 활용하는 전자기연주공정기술을 확립하였으며, 그 결과 직경 5 cm의 실리콘 잉고트를 1.5 mm/min의 속도로 무접촉 조건에서 연속주조할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.110-113
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• 2012

ZnO crystals with a baseball bat shape were synthesized without any catalysts through a simple thermal oxidation of ZnS powder in alumina crucible under air atmosphere. SEM images demonstrated that the bat structure was composed of two pieces of ZnO crystals, i.e hexagonal-shaped rod and inverted cone-shaped rod. X-ray diffraction (XRD) pattern revealed that the ZnO crystals had wurtzite hexagonal structure. Energy dispersive X-ray (EDX) spectrum showed that the ZnO was of high purity. A strong green emission peak at 510 nm was observed in cathodoluminescece spectrum.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.126-129
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• 2009

In this study, it was aimed to develop the re-use technology of ultra-fine silicon powders, by-products during the current production process of high purity poly-Si feedstock. For this goal, the compacts of the silicon powders were tried to fabricate by CIP (Cold Isostatic Pressing) method using silicon rubber mold without chemical binder materials. The density ratio of the silicon powder compacts reached 74%. In order to simulate the actual handling and charging conditions of feedstock material in casting process, a shaking test was carried out and mass loss measured. Finally, the silicon powder compacts were melted using a cold crucible induction melting method and the purity assessment was conducted by Hall effect measurement.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.169-172
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• 1998

A phyaical model of the Czochralski method for silicon single crystals is designed to measure the change of velocities and temperature profilles in the melt. Wood's metal(Bi 50%, Pb 26.7%, Sn 13.3%, Cd 10%, m.p. 70℃) is used to simulate the silicon melt in the crucible. To measure the local velocity change, electromagnetic probe is adopted as a velocity sensor. The output voltage of the sensor shows linear relationship to the velocity of the melt.

• Korean Journal of Crystallography
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• v.12 no.1
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• pp.5-9
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• 2001

Nd/sub 0.05/Y/sub 0.95/Ca₄O(BO₃)₃(Nd:YCOB) single crystals were grown by the Czochralski method using a iridium crucible under N₂ atmosphere. Optimum growth parameters to get high quality of single crystals were 1.5∼2 mm/hr of growth rate and 10∼20 rpm of rotation rate. The grown crystals were transparent with light purple color and well-developed in cleavage planes. The crystal structure of Nd;YCOB were identified to monoclinic by XRD method. Crystal defects acting as light scattering centers, such as micro-pores, secondary phases, inclusions and cracks were not observed under the He-Ne laser illuminations. Three red, green, blue laser devices for the RGB laser oscillations were designed and then fabricated from the grown Nd:YCOB crystals according to the phase-matching angles of negative type-I which were φ=16.40°, 33.95° and θ=22.59° with the flatness of λ/6 at least, respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.371-387
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• 1999

La2-xSrxCuO4 single-crystalline films were prepared on bulk single crystals of Zn-doped La2CuO4 as the substrates by LPE technique using tow deferent methods. When prepared using an alumina crucible in normal electrical furnace, the La2-xSrxCuO4 films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the La2-xSrxCuO4 films. For LPE growthby modified TSFZ method using an infrared heating furnace without crucibles, the La2-xSrxCuO4 films of x=0.11 showed superconducting with Tconset 36 K, which is 10 K higher than that in the La2-xSrxCuO4 bulk single crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.293-300
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• 1996

A continuous growth method (Orr's method) were developed to grow LiNbO3 single crystals. The optimum growth condition established are as follows; When the controlled temperature of a platinum crucible were 1190℃∼1210℃, the pulling rate was 2 mm/hr, the feeding rate was 1.5∼2.5 g/hr, and the rotation speed was 20 rpm. The phase and growth orientation of the grown LiNbO3 crystals wer characterized by a X-ray diffraction method. The overflowing phenomena, which induced cracking into the grown crystal during the process, was effectively suppressed by the control of the growth parameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1204-1207
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• 2003

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cases, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.