• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.455-463
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• 2002

Ionic Polymer metal composite(IPMC), one of new actuation materials of EAPs is fabricated by electroless plating of platinum on both sides of the perfluorosulfonic acid film or Nafion film and its electromechanical characteristics are investigated. The IPMC strip bends towards anode under electrical field. As the number of plating cycle increases, the distance between plated platinum electrodes on both sides of Nafion membrane decreases and also the displacement is almost inversely proportional to the number of plating. The displacement of IPMC strip depends on voltage magnitude and applied signal frequency and its maximum deformation is observed at a critical frequency, resonant frequency. Low pressure sandblasting is used for surface treatment of Nafion membrane and at 8 times of plating cycle produced actuator with high displacement performance. For more efficiency of fabricated IPMC, it is useful to add one or two surface developing step which is the second reduction process using hydrazine.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• Advances in nano research
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• 제4권2호
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• pp.65-84
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• 2016

This paper investigates the buckling behavior of shear deformable piezoelectric (FGP) nanoscale beams made of functionally graded (FG) materials embedded in Winkler-Pasternak elastic medium and subjected to an electro-magnetic field. Magneto-electro-elastic (MEE) properties of piezoelectric nanobeam are supposed to be graded continuously in the thickness direction based on power-law model. To consider the small size effects, Eringen's nonlocal elasticity theory is adopted. Employing Hamilton's principle, the nonlocal governing equations of the embedded piezoelectric nanobeams are obtained. A Navier-type analytical solution is applied to anticipate the accurate buckling response of the FGP nanobeams subjected to electro-magnetic fields. To demonstrate the influences of various parameters such as, magnetic potential, external electric voltage, power-law index, nonlocal parameter, elastic foundation and slenderness ratio on the critical buckling loads of the size-dependent MEE-FG nanobeams, several numerical results are provided. Due to the shortage of same results in the literature, it is expected that the results of the present study will be instrumental for design of size-dependent MEE-FG nanobeams.

• International Journal of Aerospace System Engineering
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• 제9권1호
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• pp.1-15
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• 2022

Pyrotechnic initiators provide a source of pyrotechnic energy used to initiate a variety of space mechanisms. Pyrotechnic systems build in electromagnetic environment that may lead to critical or catastrophic hazards. Special precautions are need to prevent a pulse large enough to trigger the initiator from appearing in the pyrotechnic firing circuits at any but the desired time. The EMC verification shall be shown by analysis or test that the pyrotechnic systems meets the requirements of inadvertent activation. The MIL-STD-1576 and two range safeties, AFSPC and CSG, require the safety margin for electromagnetic potential hazards to pyrotechnic systems to a level at least 20 dB below the maximum no-fire power of the EED. The PC23 is equivalent to NASA standard initiator and the 1EPWH100 squib is ESA standard initiator. This paper verifies the two safety margins for electromagnetic potential hazards. The first is verified by analyzing against a RF power. The second is verified by testing against a DC current. The EMC safety margin requirement against RF power has been demonstrated through the electric field coupling analysis in differential mode with 21 dB both PC23 and 1EPWH100, and in common mode with 58 dB for PC23 and 48 dB for 1EPWH100 against the maximum no-fire power of the EED. Also, the EMC safety margin requirement against DC current has been demonstrated through the electrical isolation test for the pyrotechnic firing circuits with greater than 20 dB below the maximum no-fire current of the EED.

• 한국초전도ㆍ저온공학회논문지
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• 제9권1호
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• pp.37-42
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• 2007

We are developing a 22.9 kV/25 MVA superconducting fault current limiting(SFCL) system for a power distribution network. A Bi-2212 bulk SFCL element, which has the merits of large current capacity and high allowable electric field during fault of the power network, was selected as a candidate for our SFCL system. In this work, we experimentally investigated important characteristics of the 190 kVA Bi-2212 SFCL element in its application to the power grid e.g. DC voltage-current characteristic, AC loss, current limiting characteristic during fault, and so on. Some experimental data related to thermal and electromagnetic behaviors were also compared with the calculated ones based on numerical method. The results show that the total AC loss at rated current of the 22.9 kV/25 MVA SFCL system, consisting of one hundred thirty five 190 kVA SFCL elements, becomes likely 763 W, which is excessively large for commercialization. Numerically calculated temperature of the SFCL element in some sections is in good agreement with the measured one during fault. Local temperature distribution in the190 kVA SFCL element is greatly influenced by non-uniform critical current along the Bi-2212 bulk SFCL element, even if its non-uniformity becomes a few percentages.

• 한국초전도ㆍ저온공학회논문지
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• 제25권4호
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• pp.24-27
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• 2023

Until now, many research activities have been conducted to commercialize high-temperature superconducting (HTS) wires for electric applications. Most of all researchers have focused on enhancing the piece length, critical current density, mechanical strength, and throughput of HTS wires. Recently, HTS magnet for generating high magnetic field shows degraded performance due to the deformation of HTS wire by high electro-magnetic force. The deformation can be derived from widthwise thickness non-uniformity of HTS wire mainly caused by wet processes such as electro-polishing of metal substrate and electro-plating of copper. Gradient sputtering process is designed to improve the thickness uniformity of HTS wire along the width direction. Copper stabilizing layer is deposited on HTS wire covered with specially designed mask. In order to evaluate the thickness uniformity of HTS wire after gradient sputtering process, the thickness distribution across the width is measured by using the optical microscope. The results show that the gradient deposition process is an effective method for improving the thickness uniformity of HTS wire.

• 전기학회논문지
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• 제65권4호
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• pp.684-688
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• 2016

The magnetic resonance method requires high quality factor(Q-factor) of resonators. Superconductor coils were used in this study to increase the Q-factor of wireless power transfer(WPT) systems in the magnetic resonance method. The results showed better transfer efficiency compared to copper coils. However, as superconducting coils should be cooled below critical temperatures, they require cooling containers. In this viewpoint, shielding materials for the cooling containers were applied for the analysis of the WPT characteristics. The shielding materials were applied at both ends of the transmitter and receiver coils. Iron, aluminum, and plastic were used for shielding. The electric field distribution and S-parameters (S11, S21) of superconducting coils were compared and analyzed according to the shield materials. As a result, plastic shielding showed better transfer efficiency, while iron and aluminum had less efficiency. Also, the maximum magnetic field distribution of the coils according to the shielding materials was analyzed. It was found that plastic shielding had 5 times bigger power transfer rate than iron or aluminum. It is suggested that the reliability of superconducting WPT systems can be secured if plastic is used for the cooling containers of superconducting resonance coils.

• 전기전자학회논문지
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• 제18권4호
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• pp.447-455
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• 2014

본 연구에서는 4H-SiC MOSFET의 주요 문제점인 $SiC/SiO_2$ 계면의 특성을 향상시키기 위해 PECVD (plasma enhanced chemical vapor deposition) 공정을 이용하여 n-based 4H-SiC MOS Capacitor를 제작하였다. 건식 산화 공정의 낮은 성장속도, 높은 계면포획 밀도와 $SiO_2$의 낮은 항복전계 등의 문제를 극복하기 위하여 PECVD와 NO어닐링 공정을 사용하여 MOS Capacitor를 제작하였다. 제작이 끝난 후, MOS Capacitor의 계면특성을 hi-lo C-V 측정, I-V 측정 및 SIMS를 이용해 측정하고 평가하였다. 계면의 특성을 건식 산화의 경우와 비교한 결과 20% 감소한 평탄대 전압 변화, 25% 감소한 $SiO_2$ 유효 전하 밀도, 8MV/cm의 증가한 $SiO_2$ 항복전계 및 1.57eV의 유효 에너지 장벽 높이, 전도대 아래로 0.375~0.495eV만큼 떨어져 있는 에너지 영역에서 69.05% 감소한 계면 포획 농도를 확인함으로써 향상된 계면 및 산화막 특성을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.197-197
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• 2011

In this study, in contrast with cases in which Scanning Tunneling Microscopy (STM) tip-induced reactions were instigated by the tunneling electrons, the local electric field, or the mechanical force between a tip and a surface, we found that the tungsten oxide (WO3) covered tungsten (W) tip of a STM acted as a chemical catalyst for the S-H dissociative adsorption of phenylthiol and 1-octanethiol onto a Ge(100) surface. By varying the distance between the tip and the surface, the degree of the tip-catalyzed adsorption could be controlled. We have found that the thiol head-group is the critical functional group for this catalysis and the catalytic material is the WO3 layer of the tip. After removing the WO3 layer by field emission treatment, the catalytic activity of the tip has been lost. 3-mercapto isobutyric acid is a chiral bi-functional molecule which has two functional groups, carboxylic acid group and thiol group, at each end. 3-Mercapto Isobutyric Acid adsorbs at Ge(100) surface only through carboxylic acid group at room temperature and this adsorption was enhanced by the tunneling electrons between a STM tip and the surface. Using this enhancement, it is possible to make thiol group-terminated surface where we desire. On the other hand, surprisingly, the WO3 covered W tip of STM was found to act as a chemical catalyst to catalyze the adsorption of 3-mercapto isobutyric acid through thiol group at Ge(100) surface. Using this catalysis, it is possible to make carboxylic acid group-terminated surface where we want. This functional group-selective adsorption of bi-functional molecule using the catalysis may be used in positive lithographic methods to produce semiconductor substrate which is terminated by desired functional groups.