• Title/Summary/Keyword: Cr2O3-doping

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Synthesis and Densification Behavior of Al Doped (La0.8Ca0.2)(Cr0.9Co0.1)O3(LCCC) Ceramics for SOFC Interconnects (SOFC 연결재용 Al이 도핑된 (La0.8Ca0.2)(Cr0.9Co0.1)O3(LCCC)계 세라믹스의 합성 및 치밀화 특성)

  • Lee, Ho-Young;Kang, Bo-Kyung;Lee, Ho-Chang;Heo, Young-Woo;Kim, Jeong-Joo;Kim, Jae-Yuk;Lee, Joon-Hyung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.5
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    • pp.392-397
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    • 2012
  • In the $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC), which has been using as interconnector materials in SOFC, Al ions were substituted for Co because ionic radius of Al is similar to that of Co. Because of the almost identical ionic radius of Al and Co, the substitution was not thought to be affect the tolerance factor of LCCC, and the densification behavior, high temperature electrical conductivity and thermal expansion coefficient were examined as a function of Al concentration. In the cases of the x= 0 and x= 0.02 in $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1-x}Al_x)O_3$ (x= 0~0.1), the samples showed the relative densities above ${\geq}95%$ when those were sintered at ${\geq}1,350^{\circ}C$. In the case of the $x{\geq}0.06$ the sintered density deteriorated greatly at lower sintering temperatures. High temperature electrical conductivity of the samples decreased as the content of Al increased. Since the valence state of Al ion is unchangeable, while Cr or Co ions contribute to the electrical conduction by changing those valence states, Al substitution resulted in the decreased electrical conductivity. Al doping of LCCC was an effective way of decreasing the thermal expansion coefficient (TEC).

Photocatalytic Behaviors of Transition Metal Ions Doped TiO2 Synthesized by Mechanical Alloying (기계적 합금화법을 이용한 전이금속 도핑에 따른 TiO2분말의 광촉매 특성)

  • Woo S.H.;Kim W.W.;Kim S.J.;Rhee C.K.
    • Journal of Powder Materials
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    • v.12 no.4 s.51
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    • pp.266-272
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    • 2005
  • Transition metal ions($Ni^{2+}$, $Cr^{3+}$ and $V^{5+}$) doped $TiO_2$ nanostructured powders were synthesized by mechanical alloying(MA) to shift the adsorption threshold into the visible light region. The synthesized powders were characterized by XRD, SEM, TEM and BET for structural analysis, UV-Vis and photoluminescence spectrum for the optical study. Also, photocatalytic abilities were evaluated by decomposition of 4-chlorophenol(4CP) under ultraviolet and visible light irradiations. Optical studies showed that the absorption wavelength of transition metal ions doped $TiO_2$ powders moved to visible light range, which was believed to be induced by the energy level change due to the doping. Among the prepared $TiO_2$ powders, $NiO^{2+}$ doped $TiO_2$ powders, showed excellent photooxidative ability in 4CP decomposition.

Sol-gel growth and structural, electrical, and optical properties of vanadium-based oxide thin films (바나듐 옥사이드 박막의 성장 및 그 구조적, 전기적, 광학적 특성)

  • Park, Young-Ran;Kim, Kwang-Joo
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.534-540
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    • 2006
  • Thin films of $V_2O_3$, $VO_2$, and $V_2O_5$ were obtained from a single precursor solution through post-annealing processes under different annealing conditions. As annealed in air, the deposited films became $V_2O_5$ with orthorhombic crystal structure, while they were $V_2O_3$ and $VO_2$ with rhombohedral and monoclinic crystal structure as annealed in vacuums with base pressure of $1{\times}10^{-6}$ Torr and with 10 mTorr $O_2$ pressure, respectively. Electrical and optical measurements indicated that the $V_2O_5$ and $VO_2$ films are semiconducting, while the $V_2O_3$ films are metallic at room temperature. Chromium doping in $VO_2$ resulted in a decrease of the resistivity and changed the conduction type from n-type to p-type. 10% Cr-doped $VO_2$ films were found to have orthorhombic crystal structure, which is different from that of the undoped $VO_2$. Spectral features in the optical absorption spectra of all the films were interpreted as the transitions involving O 2p and V 3d bands. The crystal-field splittings between $t_{2g}$ and $e_g$ states of the V 3d bands are estimated to be about 1.5 and 1.0 eV for $V_2O_5$ and $VO_2$, respectively.

Sintering Behavior and Electrical Properties of Strontium Titanate-Based Ceramic Interconnect Materials for Solid Oxide Fuel Cells (고체산화물 연료전지용 Strontium Titanate 세라믹 접속자 소재의 소결 거동 및 전기적 특성)

  • Park, Beom-Kyeong;Lee, Jong-Won;Lee, Seung-Bok;Lim, Tak-Hyoung;Park, Seok-Joo;Song, Rak-Hyun;Shin, Dong-Ryul
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.80.1-80.1
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    • 2010
  • A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

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Fabrication of Transition-metal-incorporated TiO2 Nanopowder by Flame Synthesis (화염법에 의한 천이금속 첨가 이산화티타늄 나노분말의 제조)

  • Park Hoon;Jie Hyunseock;Lee Seung-Yong;Ahn Jae-Pyoung;Lee Dok-Yol;Park Jong-Ku
    • Journal of Powder Materials
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    • v.12 no.6 s.53
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    • pp.399-405
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    • 2005
  • Nanopowders of titanium dioxide $(TiO_2)$ incorporating the transition metal element(s) were synthesized by flame synthesis method. Single element among Fe(III), Cr(III), and Zn(II) was doped into the interior of $TiO_2$ crystal; bimetal doping of Fe and Zn was also made. The characteristics of transition-metal-doped $TiO_2$ nanopowders in the particle feature, crystallography and electronic structures were determined with various analytical tools. The chemical bond of Fe-O-Zn was confirmed to exist in the bimetal-doped $TiO_2$ nanopowders incorporating Fe-Zn. The transition element incorporated in the $TiO_2$ was attributed to affect both Ti 3d orbital and O 2p orbital by NEXAFS measurement. The bimetal-doped $TiO_2$ nanopowder showed light absorption over more wide wavelength range than the single-doped $TiO_2$ nanopowders.

Potential of chemical rounding for the performance enhancement of pyramid textured p-type emitters and bifacial n-PERT Si cells

  • Song, Inseol;Lee, Hyunju;Lee, Sang-Won;Bae, Soohyun;Hyun, Ji Yeon;Kang, Yoonmook;Lee, Hae-Seok;Ohshita, Yoshio;Ogurad, Atsushi;Kim, Donghwan
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1268-1274
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    • 2018
  • We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of $AlO_{x^-}$ and $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured $p^+$-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of $AlO_x$ layers on pyramid textured $p^+$-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance ($R_{SW}$) from ~2.5 to ~3.7% for the $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ~60 and ${\sim}100{\Omega}/sq$ $p^+$-emitters is reduced by 0.8 and $0.6mA/cm^2$, respectively under front $p^+$-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ~60 and ${\im}100{\Omega}/sq$ $p^+$-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ${\sim}100{\Omega}/sq$ $p^+$-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.

Effects of Si doping on PTC Properties in $BaTiO_3$ thermistor sintered in reduced atmosphere and reoxididation ($SiO_2$ 함량에 따른 $BaTiO_3$계 써미스터의 PTC 특성 변화)

  • Baek, Seung-Gyeong;Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jong-Hee;Nahm, Sahn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.157-157
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    • 2009
  • $BaTiO_3$를 기본조성으로 하는 PTC 써미스터는 Curie 온도이상에서 저항이 급격히 상승하는 반도성 전자세라믹스로서 degaussing 소자, 정온 발열체, 온도센서, 전류 제한 소자 등 상업적으로 폭넓게 사용되고 있다. 본 소자는 소결온도, 소결 및 열처리 분위기, 불순물, 첨가제 등의 제조공정상의 인자들과 기공률, 결정립 크기 등이 복합적으로 작용하여 PTCR 특성이 크게 영향을 받기 때문에 제조하기에 무척 까다로운 소자로 알려져 있다. 특히 과전류 보호 소자용으로 사용하기 위해서는 상온 비저항을 크게 낮추어야 하며 이에 대한 연구가 계속 진행되고 있다. 따라서 본 연구에서는 SiO2을 0.5~10 at%로 달리한 조성으로 환원 분위기에서 소결하고 공기 중에서 재산화 처리하여 재료의 PTC 특성에 어떠한 영향을 미치는지 분석하였다. 소정의 조성을 선택하여 $1180^{\circ}C{\sim}1240^{\circ}C$에서 2시간 동안 환원분위기에서 소결하고, $800^{\circ}C$에서 1 시간 공기 중에서 재산화 처리한 후 R-T 특성을 측정하여 SiO2 함량에 따른 PTC 특성을 분석하였다. 그 결과 SiO2의 함량이 증가할수록 상온 저항은 낮아지다가 3.0 at% 이상으로 첨가할 경우 급격히 상승하는 경향을 나타내었다. 특히 SiO2를 1.0~3.0 at% 일 때 우수한 PTC 특성을 가졌다. $1180^{\circ}C$에서는 소결 밀도가 낮아 상온 비저항이 크게 높았지만, $1200^{\circ}C{\sim}1220^{\circ}C$에서는 정상 입성장이 나타나면서 일반적인 PTC 특성을 가졌지만, $1240^{\circ}C$ 이상에서는 공정 액상이 형성되어 비정상 입성장이 일어나 상온 비저항이 크게 낮아졌다. 한편 점핑비-log(Rmax/Rmin)는 SiO2 함량이 증가할수록 높아지다가 3.0 at% 이상에서는 낮아짐을 확인하였다.

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Phase analysis of simulated nuclear fuel debris synthesized using UO2, Zr, and stainless steel and leaching behavior of the fission products and matrix elements

  • Ryutaro Tonna;Takayuki Sasaki;Yuji Kodama;Taishi Kobayashi;Daisuke Akiyama;Akira Kirishima;Nobuaki Sato;Yuta Kumagai;Ryoji Kusaka;Masayuki Watanabe
    • Nuclear Engineering and Technology
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    • v.55 no.4
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    • pp.1300-1309
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    • 2023
  • Simulated debris was synthesized using UO2, Zr, and stainless steel and a heat treatment method under inert or oxidizing conditions. The primary U solid phase of the debris synthesized at 1473 K under inert conditions was UO2, whereas a (U, Zr)O2 solid solution formed at 1873 K. Under oxidizing conditions, a mixture of U3O8 and (Fe, Cr)UO4 phases formed at 1473 K, whereas a (U, Zr)O2+x solid solution formed at 1873 K. The leaching behavior of the fission products from the simulated debris was evaluated using two methods: the irradiation method, for which fission products were produced via neutron irradiation, and the doping method, for which trace amounts of non-radioactive elements were doped into the debris. The dissolution behavior of U depended on the properties of the debris and aqueous solution for immersion. Cs, Sr, and Ba leached out regardless of the primary solid phases. The leaching of high-valence Eu and Ru ions was suppressed, possibly owing to their solid-solution reaction with or incorporation into the uranium compounds of the simulated debris.