• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.33-35
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• 2011

Films of CrAlN and CrZrN were deposited on a steel substrate by closed field unbalanced magnetron sputtering, and their oxidation behaviors were investigated. CrAlN films consisted of dense, polycrystalline CrN and AlN fine columns. The formed oxides consisted primarily of crystalline $Cr_2O_3$ incorporated with $Al_2O_3$. The oxide layers were thin and compact so as to make CrAlN films more protective than CrN films. In case of CrZrN films, Zr atoms were dissolved in the CrN phase. Zr atoms advantageously refined the columnar structure, reduced the surface roughness, and increased the micro-hardness. However, the addition of Zr did not increased oxidation resistance, mainly because Zr was not a protective element. All the deposited films displayed relatively good oxidation resistance, owing to the formation of the highly protective $Cr_2O_3$ on their surface. The $Cr_{40}Zr_9N$ and $Cr_{31}Zr_{16}N$ films oxidized to $Cr_2O_3$ as the major phase and ${\alpha}-ZrO_2$ as the minor one, whereas the CrN film oxidized to $Cr_2O_3$.

• 한국표면공학회지
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• 제40권1호
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• pp.39-43
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• 2007

The pure CrN powders oxidized to $Cr_2O_3$ noticeably above $850^{\circ}C$ in air. When these powders were sintered into bulk samples at $1500^{\circ}C$ under 40 atm of $N_2$ pressure, the CrN phase partly changed into the $Cr_2N$ phase, owing to the partial loss of nitrogen from CrN. When the bulk sample was heated at $1000-1200^{\circ}C$ for 100 hr under vacuum, the CrN phase also progressively changed into $Cr_2N$. At the same time, a relatively thin $Cr_2O_3$ layer formed on the bulk sample due to the reaction of chromium with residual oxygen in vacuum.

• 한국재료학회지
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• 제31권11호
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• pp.635-641
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• 2021

Cr thin films with O added are deposited on sapphire substrate by DC sputtering and are nitrided in NH₃ atmosphere between 300 and 900 ℃ for various times. X-ray diffraction results show that nitridation begins at 500 ℃, forming CrN and Cr₂N. Cr oxides of Cr₂O₃ are formed at 600 ℃. And, at temperatures higher than 900 ℃, the intermediate materials of Cr₂N and Cr₂O₃ disappear and CrN is dominant. The atomic concentration ratios of Cr and O are 77% and 23%, respectively, over the entire thickness of as-deposited Cr thin film. In the sample nitrided at 600 ℃, a CrN layer in which O is substituted with N is formed from the surface to 90 nm, and the concentrations of Cr and N in the layer are 60% and 40%, respectively. For this reason, CrN and Cr₂N are distributed in the CrN region, where O is substituted with N by nitridation, and Cr oxynitrides are formed in the region below this. The nitridation process is controlled by inter-diffusion of O and N and the parabolic growth law, with activation energy of 0.69 eV.

• 한국재료학회지
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• 제11권4호
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• pp.324-328
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• 2001

아크이온 플레이팅 장치를 이용하여 STD61강 기판 위에 이온질화 전처리를 행하거나 하지 않은 후, CrN 박막을 증착하고, 대기중 $700~900^{\circ}C$의 온도에서 40시간동안 이들에 대한 산화거동을 연구하였다. 산화거동은 열중량분석기, X선회절기, EDS, SEM을 이용하여 조사하였다. 증착된 CrN박막은 CrN과 $Cr_2$N의 두 상으로 구성되어 있었다. CrN박막은 보호적 $Cr_2$O$_3$층을 형성하여 기판을 산화로부터 보호하였다. 이온질화처리는 CrN박막의 내산화성에 영향을 주지 않았다.

• 한국표면공학회지
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• 제24권1호
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• pp.24-24
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• 1991

Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr2N turned out to have a fine fibrous structure. The Cr2N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr2N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The micorstructure of the Cr2N film was dense and no columnar structure was observed. The films in the mixed state of Cr2N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/$\textrm{mm}^2$ at 10gf load.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.119-120
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• 2013

공구, 다이몰드 등에 널리 쓰이는 TiC, TiN, CrN, TiCrN, TiAlN 코팅의 산화특성을 비교하기 위하여 $600^{\circ}C-900^{\circ}C$에서 대기중 산화시험을 실시하였다. 내산화성은 (TiC, TiN), TiAlN, TiCrN, CrN 코팅의 순서로 증가하였다. 코팅원소중 Ti는 $TiO_2$로, Cr은 $Cr_2O_3$로, Al은 $Al_2O_3$로 산화되었다.

• 대한수학회논문집
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• 제13권1호
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• pp.85-94
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• 1998

The purpose of this paper is to give sample characterizations of n-dimensional CR-submanifolds of (n-1) CR-semifolds of (n-1) CR-dimension immersed in a complex projective space $CP^{(n+p)/2}$ with Fubini-Study metric and we study an n-dimensional compact, orientable, minimal CR-submanifold of (n-1) CR-dimension in $CP^{(n+p)/2}$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.21-21
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• 2014

$CrN/Al_2O_3/CrN$ 다층 코팅을 HIPIMS와 ALD간 하이브리드 코팅법을 통해 형성하였다. ALD를 통해 CrN 층에 도입한 $Al2O_3$층의 두께 및 위치가 $CrN/Al_2O_3/CrN$ 다층 코팅층의 미세구조, 표면 거칠기, 기계적 특성 및 화학적 특성에 미치는 영향에 대해 조사하였다. 전체 공정시간은 거의 변화시키지 않고도, ALD를 이용한 $Al2O_3$층의 삽입에 의하여 기계적/화학적 특성이 크게 개선될 수 있음을 확인하였으며, 개선된 특성에 대한 원인에 대해 조사하였다.

• 한국결정학회지
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• 제3권1호
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• pp.44-52
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• 1992

Ti(C, N)-Cr3C2계 ceramics 의 소결에 있어 서, 소결 분위기가 소결체의 물성에 미치는 영 향과 Cr3c2월 상변화 현상을 검토하였다. Ti(C, N)-Crsc2 혼합분말을 진공 및 질소 분위기에서 소결할 경우 치밀한 소결체를 얻을 수 있었으나, 아르곤 분위기에서는 치밀한 소결체를 얻을 수 없었다. 이들 소결체의 X-선 회절 분석결과, 진공 분위기에서는 Cr3c2가 CrIC3로 변화하 였으며 질소 및 아르곤 분위기에서는 상변화가 거의 없었다 이는 진공소결시 Ti(C, N)에서 탈질 현상이 일어나고 이에 따라 Cr3c2중의 C의 이동에 의해 CrTCE 상으로 변하며, 따라서 활발 한 Ti 및 Cr의 이동으로 인해 치밀한 소결이 이루어지는 것으로 해석되며 반면 질소분위기에서는,가질 현상이 일어나고 이에 따라 유리탄 소의 생성, 이 유리탄소에 의한 입계 내의 산소 의 제거 및 입계 사이의 유리탄소의 잔존 등의 소결기구에 의해 치밀화가 이루어 지는 것으로 해석된다.

• 한국표면공학회지
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• 제34권3호
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• pp.231-239
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• 2001

The structure and composition of Cr-nitrides formed on an electroplated hard Cr layer during an ionnitriding process was analyzed, and the growth kinetics of the Cr-nitrides was examined as a function of the ion-nitriding temperature and time in order to establish a computer simulation model prediction the growth behavior of the Cr-nitride layer. The Cr-nitrides formed during the ion-nitriding at $550~770^{\circ}C$ were composed of outer CrN and inner $Cr_2$N layers. A nitrogen diffusion model in the multi-layer based on fixed grid FDM (Finite Difference Method) was applied to simulate the growth kinetics of Cr-nitride layers. By measuring the thickness of each Cr-nitride layer as a function of the ion-nitriding temperature and time, the activation energy for growth of each Cr-nitride was determined; 82.26 KJ/mol for CrN and 83.36 Kj/mol for $Cr_2$N. Further, the nitrogen diffusion constant was determined in each layer; $9.70$\times$10^{-12}$ /$m^2$/s in CrN and $2.46$\times$10^{-12}$ $m^2$/s in $Cr_2$N. The simulation on the growth kinetics of Cr-nitride layers was in good agreements with the experimental results at 550~72$0^{\circ}C$.