• Korean Journal of Materials Research
• /
• v.28 no.10
• /
• pp.595-600
• /
• 2018

This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young's modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.4
• /
• pp.328-335
• /
• 2001

In this work, we made the precision thin film resistors of NiCr alloy (74wt%Ni-f18wt%Cr-4wt%Al-4wt%Cu) using DC/RF magnetron sputtering method and studied the sheet resistance and TCR(Temperature Coefficient of Resistance) etc... of the Ni-Cr-Al-Cu alloy thin film according to the change by annealing treatment to 400$\^{C}$ in air and nitrogen atmosphere and the change(power, pressure, substrate temperature) of sputtering process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.6
• /
• pp.470-474
• /
• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.737-740
• /
• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500${\AA}$ and annealing condition(300$^{\circ}C$, 3 hr) in Ar-10 %N$_2$deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.1
• /
• pp.37-42
• /
• 2004

In the electronic components and devices fabrication, thin film resistors with low TCR (temperature coefficient of resistance) and high precision have been used over 3 ㎓ microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because they have low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of S-type with excellent resistors properties by RF-sputtering. Also we reported the best annealing condition of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to annealing conditions($200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$)

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.145-150
• /
• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best annealing conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to annealing conditions$(200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C)$.

• Korean Journal of Materials Research
• /
• v.12 no.8
• /
• pp.669-675
• /
• 2002

CrN film coated by AIP method, improved the mechanical properties (Hardness, Roughness, wear and fatigue) of Ti-6Al-4V alloy. The properties were studied using GXRD, XPS, Hardness, Roughness, wear and fatigue testers. CrN thin film thickness was about 7.5$\mu\textrm{m}$ and grew with (111) orientation. Hardness of CrN thin film was very high (Hv 1390) and roughness of the surface layer was greatly improved (Ra=0.063$\mu\textrm{m}$) compared with matrix alloy (Ra=0.321$\mu\textrm{m}$). Such changes of hardness and roughness could be contributed to improving the wear resistance and fatigue life. Striation like pattern with dimples and voids, a typical fatigue fracture mode, was observed throughout the specimen.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.10 no.4
• /
• pp.96-101
• /
• 2011

The thin films of TiN have been used extensively as wear-resistant materials, for instance, such as tools of high-speed cutting, metal mold forming etc. In these days, because the thin films capable of being used more severe conditions are needed, the technologies of arc ion plating are tried to improve its characteristics. The purpose of this study is to investigate the characteristics of thin films of (Ti,Cr)N compared with those of TiN. The method of arc ion plating, which is known as showing good tight-adherence and productivity, was used. After manufacturing thin films of ($Ti_{1-x}Cr_{x}$)N (x=0~1) with change of Cr in (Ti,Cr) target, atomic concentration, structure, size of crystallite, residual stress and surface roughness of thin films on substrate were investigated. As the results, it was confirmed that Cr atomic concentrations of thin films were proportionally changed with Cr atomic concentrations of target, and thin films of ($Ti_{1-x}Cr_{x}$)N (x=0~1) showed NaCl type and CrN existed as solid solution to TiN.

• Journal of the Korean Magnetics Society
• /
• v.3 no.4
• /
• pp.320-324
• /
• 1993

The effect of sputtering conditions on magnetic properties of CoCrMo/Cr magnetic thin film was investigated. Substrate temperature were controlled from R. T to $250^{\circ}C$. The thickness changes of Cr underlayer and CoCrMo magnetic layer were in the range of $1000-2500\AA$ and $300-800\AA$, respectively. Grain size was found to be decreased with increasing magnetic layer thickness(from $500\AA$ to $800\AA$). CoCrMo magnetic layer microstructure showed relatively small dependence on Cr underlayer thickness, substrate temperature. Coercivity increased with increasing Cr underlayer, magnetic layer thickness and substrate temperature. CoCrMo/Cr thin film showed a coercivity of 880 Oe in $700\AA$ magnetic layer thickness and $1000\AA$ Cr underalyer thickness.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1540-1542
• /
• 1998

This paper presents the deposition and anneling characteristics of Cr thin film strain gaugs, which were deposited on glass by DC magnetron sputtring. The optimzed deposition conditions of Cr thin films were the input DC power, 7 W/$cm^2$ and the Ar vacuuming pressure, 9 mTorr, GF, TCR and TCS of Cr thin film strain gauges were 5.86, 400 ppm/$^{\circ}C$ and $\approx$0 ppm/$^{\circ}C$ respectively. The anneling conditions were investigated with the thinkness rang (1200 $\sim$ 3500$\AA$) of Cr thin films, anneling temperature (100 $\sim$ $300^{\circ}C$) and anneling time (24 $\sim$ 72hr). The maximum resistivity and the minimum TCR value were 1757.03 ${\mu}{\Omega}$cm, -194.07 ppm/$^{\circ}C$, respectively.