• Title/Summary/Keyword: Coupling System

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Effects of Mn- and K-addition on Catalytic Activity of Calcium Oxide for Methane Activation (메탄 활성화반응에서 산화칼슘 촉매의 활성에 대한 망간과 칼륨의 첨가효과)

  • Park, Jong Sik;Kong, Jang Il;Jun, Jong Ho;Lee, Sung Han
    • Journal of the Korean Chemical Society
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    • v.42 no.6
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    • pp.618-628
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    • 1998
  • Pure CaO, Mn-doped CaO, Mn/CaO, and K/CaO catalysts were prepared and tested as catalysts for the oxidative coupling of methane in the temperature range of 600 to 800$^{\circ}C$ to investigate the effects of Mn- and K-addition on the catalytic activity of calcium oxide. To characterize the catalysts, X-ray powder diffraction(XRD), XPS, SEM, DSC, and TG analyses were performed. The catalytic reaction was carried out in a single-pass flow reactor using on-line gas chromatography system. Normalized reaction conditions were generally $p(CH_4)/p(O_2)=250$ Torr/50 Torr, total feed flow rate=30 mL/min, and 1 atm of total pressure with He being used as diluent gas. Among the catalysts tested, 6.3 mol% Mn-doped CaO catalyst showed the best $C_2$ yield of 8.0% with a selectivity of 43.2% at 775$^{\circ}C$. The $C_2$ selectivity increased on lightly doped CaO catalysts, while decreased on heavily doped CaO([Mn] > 6.3 mol%) catalysts. 6 wt.% Mn/CaO and 6 wt.% K/CaO catalysts showed the $C_2$ selectivities of 13.2% and 30.9%, respectively, for the reaction. Electrical conductivities of CaO and Mn-doped CaO were measured in the temperature range of 500 to 1000$^{\circ}C$ at Po2's of $10^{-3}\; to\;10^{-1}\;atm.$ The electrical conductivity was decreased with Mn-doping and increased with increasing $P0_2$in the range of $10^{-3}\;to\;10^{-1}\;atm,$ indicating the specimens to be p-type semiconductors. It was suggested that the interstitial oxygen ions formed near the surface can activate methane and the formation of interstitial oxygen ions was discussed on the basis of solid-state chemistry.

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Growth and characterization ofZnIn$_2S_4$ single crystal thin film using hot wall epitaxy method (Hot Wall Epitaxy(HWE)에 의한 ZnIn$_2S_4$ 단결정 박막 성장과 특성)

  • 최승평;홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.4
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    • pp.138-147
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    • 2001
  • The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

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Optimization and Application Research on Triboelectric Nanogenerator for Wind Energy Based High Voltage Generation (정전발전 기반 바람에너지 수확장치의 최적화 및 고전압 생성을 위한 활용 방안)

  • Jang, Sunmin;Ra, Yoonsang;Cho, Sumin;Kam, Dongik;Shin, Dongjin;Lee, Heegyu;Choi, Buhee;Lee, Sae Hyuk;Cha, Kyoung Je;Seo, Kyoung Duck;Kim, Hyung Woo;Choi, Dongwhi
    • Korean Chemical Engineering Research
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    • v.60 no.2
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    • pp.243-248
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    • 2022
  • As the scope of use of portable and wearable electronic devices is expanding, the limitations of heavy and bulky solid-state batteries are being revealed. Given that, it is urgent to develop a small energy harvesting device that can partially share the role of a battery and the utilization of energy sources that are thrown away in daily life is becoming more important. Contact electrification, which generates electricity based on the coupling of the triboelectric effect and electrical induction when the two material surfaces are in contact and separated, can effectively harvest the physical and mechanical energy sources existing in the surrounding environment without going through a complicated intermediate process. Recently, the interest in the harvest and utilization of wind energy is growing since the wind is an infinitely ecofriendly energy source among the various environmental energy sources that exist in human surroundings. In this study, the optimization of the energy harvesting device for the effective harvest of wind energy based on the contact electrification was analyzed and then, the utilization strategy to maximize the utilization of the generated electricity was investigated. Natural wind based Fluttering TENG (NF-TENG) using fluttering film was developed, and design optimization was conducted. Moreover, the safe high voltage generation system was developed and a plan for application in the field requiring high voltage was proposed by highlighting the unique characteristics of TENG that generates low current and high voltage. In this respect, the result of this study demonstrates that a portable energy harvesting device based on the contact electrification shows great potential as a strategy to harvest wind energy thrown away in daily life and use it widely in fields requiring high voltage.