• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.97-101
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• 2009

The use of a filler material in epoxy composite materials is an essential condition for reducing the unit cost of production and reinforcing mechanical strength. However, the dielectric strength of insulators decreases rapidly due to interactions between the epoxy resin and filler particles. In contrast to existing composite materials, nano-composite materials have superior dielectric strength, mechanical strength, and enduring chemical properties due to an increase in the bond strength of the polymer and nano material, It is reported that nano-fillers provide new characteristics different from the properties of the polymer material. This study is to improve the insulation capability of epoxy resins used in the insulation of a power transformer apparatus and many electronic devices mold. To accomplish this, the additional amount of nano-$SiO_2$ to epoxy resin was changed and the epoxy/$SiO_2$ nano composite materials were made, and the fundamental electrical properties were investigated using a physical properties and an analysis breakdown test. Using allowable breakdown probability, the optimum breakdown strength for designing an electrical apparatus was determined. The results found that the electrical characteristics of the nano-$SiO_2$ content specimens were superior to the virgin specimens. The 0.4 wt% specimens showed the highest electrical properties among the specimens examined with an allowable breakdown probability of 20 %, which indicates stable breakdown strength in insulating machinery design.