• Journal of Electrochemical Science and Technology
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• 제8권1호
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• pp.35-42
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• 2017

In this study, the effect of electrolyte addition on the removal of organics and nutrients in electrochemical wastewater using a copper electrode, and the characteristics of the by-product of electrolysis were investigated. The removal of organics increased significantly as shorter reaction times upon the addition of chloride ion, and most of the electrolysis reaction was completed within 20 min. The reaction rate gradually increased in proportion to the $Cl^-$/COD ratio, whereas the highest removed mass of organic matter per mass of added electrolyte was observed at a $Cl^-$/COD ratio of 1. After the addition of electrolyte, significant removal of ammoniacal nitrogen was observed as a result of the enhanced generation of oxidizers such as hypochlorite. Excellent phosphorus removal was also achieved in a very short reaction time (within 2 min) by electro-coagulation. As the electrolysis progressed, the amount of by-product increased gradually, whereas a decrease of sludge volume index was observed after the addition of electrolyte. This indicated that the settling performance of the by-products was better, and their removal would be easily achieved.

• 자원리싸이클링
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• 제21권5호
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• pp.50-57
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• 2012

황산동 용액중에 불순물로 존재하는 Sb, Bi 및 As를 제거하기 위해 Aminophosphosphonic acid를 관능기로 함유한 이온교환수지를 사용하여 비교 실험을 실시하였다. 이들 불순물 제거 반응에 영향을 미칠 수 있는 반응온도, 반응시간, 이온교환수지양 등에 대하여 고찰하였다. 기초 실험 결과 약 88%의 Sb 및 94%의 Bi가 이온교환수지에 흡착되어 황산동용액으로부터 제거가 가능하였다. 그러나 As의 경우는 제거율이 10% 이하로 미미하였다. 한편, Bi 와 Sb가 흡착된 수지에서 황산과 염산용액을 이용하여 선택적으로 세출이 가능하였다. 연속흡착실험 결과 Sb 와 Bi의 경우는 2BV 후에는 98.1%와 96.6%의 높은 흡착율을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.523-524
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• 2007

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

• 대한지하수환경학회지
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• 제5권1호
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• pp.30-36
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• 1998

저분자량 유기산을 이용한 in-situ flushing 토양세척기법의 실제 현장 적용성 검토를 위해 실험실에서 회분식 실험을 통하여 적당한 세척제를 선정하고 이에 따른 여러 가지 운전변수를 찾아보았다. 대상 중금속으로는 Cu를 택했고, 세척제로는 실제 토양환경에 영향이 비교적 적은 저분자량 유기산인 acetic, citric, oxalic, succinic acid를 이용했다. 유기산을 이용하여 처리한 결과 실험에 사용된 유기산들 모두 1 mM의 저농도에서는 효과를 나타내지 못했고 50 mM 이상의 고농도에서 보다 좋은 제거율을 보였는데, 50 mM과 100mM의 경우 제거율이 큰 차이를 보이지 못했다. citric arid와 oxalic acid의 경우 중성 및 약산성 상태에서 최대의 제거율이 나타났고 특히 citric arid의 경우 87.1%의 높은 제거율을 보였다. 유기산이 없을때는 강산성 상태에서 Cu의 최고제거율이 70% 정도였다. 그러나 각 경우에서의 speciation을 살펴보면 유기산이 없을 경우에는 추출된 Cu의 대부분이 유해한 free ion상태로 존재하게 되고 유기산이 있을 경우에는 추출된 Cu의 대부분이 유기산과 complex를 이룬다는 것을 알 수 있었다.

• Korean Chemical Engineering Research
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• 제46권5호
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• pp.863-867
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• 2008

피치계 활성탄소섬유가 납사분해 잔사유를 개질하여 용융 방사하고, 산화, 탄화 및 스팀으로 활성화하여 제조되었다. 활성탄소섬유의 표면은 주석-팔라듐을 사용하여 단일 스텝에 의해 예민화 과정을 거쳤다. 예민화된 활성탄소섬유 표면에 무전해도금법을 사용하여 구리를 골고루 담지하였다. 도금시간을 증가시켜서 구리의 담지량을 변화시키고, BET, SEM, XRD 및 ICP를 이용하여 촉매 특성 변화에 미치는 영향을 관찰하였다. 도금시간에 따라 부가된 구리의 양은 증가하나, 기공부피와 비표면적은 감소하였다. 또한 반응 온도가 증가함에 따라 NO 제거 성능이 증가하였다. $300^{\circ}C$ 이상의 반응 온도에서 부가된 구리의 양이 증가하면 표면적의 감소와 구리 분산도의 감소 때문에 NO 제거 성능은 감소하는 결과를 얻었다.

• Steel and Composite Structures
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• 제15권2호
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• pp.151-162
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• 2013

In this study, an electrolyzing device for the production of metal powders was designed and fabricated. The production of copper powders was performed using a variety of current densities, anode-cathode distances and power removal times. The effect of these parameters on powder particle size and shape was determined. Particle size was measured using a laser diffraction unit while the powder shape was determined by SEM. Experimental results show that an increase in current density leads to a decrease in powder particle size. In addition particle shape changed from globular dendritic to acicular dendritic with increasing the current density. Distance between the cathode and anode also showed a similar influence on powder particle size and shape. An increase in time of powder removal led to an increase in powder particle size, as the shape changed from acicular dendritic to globular dendritic.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.603-604
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro- structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_3$ abrasive particles in CMP slurry.

• 한국안전학회지
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• 제1권1호
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• pp.27-32
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• 1986

To remove sulfur dioxide from flue gas by the method of metal oxide, copper powder of average diameter $2.4\mu\textrm{m}$and $51\mu\textrm{m}$ were used in a fixed bed reactor over a, temperature range of $300^{\circ}C-500^{\circ}C$. Copper oxide reacts with sulfur dioxide producing cupric sulfate and it can be regenerated from the latter by using hydrogen or methane. Experimental results showed that the reaction rate was increased by the increase of reaction temperature in the range of $300^{\circ}C-422^{\circ}C$ and the removal efficiency of sulfur dioxide was high in case of small size copper particle. However the removal efficiency was decreased at higher temperature due to decomposition of cupric sulfate. The rate controlling step of this reaction was chemical reaction and deactivating catalysts model can be applied to this reaction. The rate constants for this reaction and deactivation are as follows ： k＝8,367exp(-10,298/RT) Kd＝2.23exp(-8,485/RT)

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1269-1270
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1729-1730
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_{3}$ abrasive particles in CMP slurry.