• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.30-37
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• 2005

We present an air bridge type electrode system with tunable electrode distance for detecting electroactive biomolecules. It is known that the narrower gap between electrode fingers, the higher sensitivity in IDA (interdigitated array) electrode. In previous researches on IDA electrode, narrower patterning required much precise and expensive equipment as the gap goes down to nanometer scale. In this paper, an improved method is suggested to replace nano gap pattering with downsizing electrode distance and showed that the patterning can be replaced by thickness control using metal deposition methods, such as electroplating or metal sputtering. The air bridge type electrode was completed by the following procedures: gold patterning for lower electrode, copper electroplating, gold deposition for upper electrode, photoresist patterning for gold film support, and copper etching for space formation. The thickness of copper electroplating is the distance between upper and lower electrodes. Because the growth rate of electroplating is $0.5{\mu}m\;min^{-1}$, the distance is tunable up to hundreds of nanometers. Completed electrodes on the same wafer had $5{\mu}m$ electrode distance. The gaps between fingers are 10, 20, 30, and $40{\mu}m$ and the widths of fingers are 10, 20, 30, 40, and $50{\mu}m$. The air bridge type electrode system showed better sensitivity than planar electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.395-396
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• 2008

Copper-Phthalocyanine (Cu-Pc) thin films of 100nm thickness have been deposited on silicon substrates as the different heating temperatures by thermal evaporation deposition technique. X-ray patterns showed with different temperature conditions at the $2\theta$ range of 5-$55^{\circ}$. The surface roughness of Cu-Pc thin films was investigated by using an atomic force microscope (AFM). A scanning electron microscope (SEM) has been used to characterize the micro-structures and morphologies depended on the substrate temperatures.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.853-856
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• 2009

Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films, tris(N,N-ethylbutyldiselenocarbamato)indium(III) was treated to produce CuInSe2 films by MOCVD method at 400 ${^{\circ}C}$. These precursors are very stable in ambient conditions. In our process, it was quite easy to obtain high quality CIS thin films with less impurities and uniform thickness. Also, it was found that it is easy to control the stoichiometric ratio of relevant elements on demands, leading to Cu or In rich CIS thin films. These CIS films were analyzed by XRD, SEM, EDX, and Near-IR spectroscopy. The optical band gap of the stoichiometric CIS films was about 1.06 eV, which is within an optimal range for harvesting solar radiation energy.

• 한국표면공학회지
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• 제29권2호
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• pp.140-145
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• 1996

Silver deposits formed on copper substrates by replacement reactions show poor adhesion, and a silver film plated on such a deposit does not adhere. Silver ion makes a highly stable complex with cyanide ion, so that in a silver cyanide solution, the activity of silver ion is very small. This is one of the reasons for the universal use of cyanide baths in the industrial silver plating. However, the consideration of the difference between the values of the stability constants for bath the silver-iodide complex and the copper-iodide complex suggest that the rate of replacement deposition of silver on the copper substrate in si]ver-potassium iodide solution, could be comparatively low. To confirm this, the rate of replacement deposition of silver in both a silver-potassium iodide solution ($AgNO_3$0.10 mol/L, KI 2.00 mol/L ) and a strike silver plating bath (AgCN 0.028 mol/L, KCN 1.15 mol/L ) was estimated from the current density corresponding to the point of intersection of the anodic and the cathodic polarization curves. These estimated values were almost the same, and it is suggested that the silver-potassium iodide solution is not only a cyanide free silver plating bath capable of employing a copper substrate but a silver plating bath which requires no strike plating.

• 전기화학회지
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• 제13권4호
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• pp.270-276
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• 2010

기공 경사화된 마이크론 단위의 구조 틀 및 나노 수지상 구조 벽을 가지는 니켈-구리 거품 전극을 전기화학적인 방법으로 합성하였다. 전해 도금 시 순수한 니켈은 치밀한 층으로 성장하는 양상을 보였으나, 구리와 함께 도금시키는 경우 그 성장 양상이 순수한 니켈과는 매우 다르게 관찰되었다. 특히, 첨가제로써 염소 이온의 농도가 증가함에 따라 니켈-구리 도금 층의 수지상 성장이 뚜렷해지는 모습을 보였다. 또한, 기재와 먼 부분일수록 도금 층 내 구리 대비 니켈의 상대적인 양이 감소하였으며, 염소 이온 농도가 높아짐에 따라 전 도금 층에 걸쳐 니켈의 양이 증가하였다. 수지상 구조 벽의 가지 내부 조성을 분석한 결과, 중심부로 갈수록 구리 함량이 점차 높아지는 조성 구배를 확인하였으며, 적절한 열처리를 통해 상호 확산을 유도하여 균일한 조성의 니켈-구리 합금을 얻어낼 수 있었다. 본 연구를 통해 제작된 재료는 기능성 전기 화학 장치용 고성능 전극에 활용될 수 있을 것으로 기대된다.

• 한국진공학회지
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• 제15권5호
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• pp.485-492
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• 2006

새로운 1가 구리 전구체인 $[Cu^I(hfac)]_2(DVTMSO)$ and $[Cu^I(hfac)]_2(HD)$ (hfac=hexa- fluoroacetylacetonate, DVTMSO=1,2-divinyltetramethyldisiloxane, HD=1,5-hexadiene)를 합성하였으며, 또한 유기금속 화학증착법을 사용하여 증착특성을 확인하였다. 새로운 전구체는 기존 구리 1가 전구체와는 다르게 두 개의 Cu(hfac)가 하나의 중성리간드에 결합된 형태를 가지고 있다. 또한 새롭게 합성된 두 종류의 전구체는 기존에 알려진 1가 구리 고체 전구체에 비해 높은 안정성 및 높은 증기압을 가지고 있는 것이 확인하였다. 아울러 기존의 전구체와는 달리 새로운 전구체로 화학증착하면 막 (films)을 형성하지 않고 구리점 (dots)을 형성하는 것을 확인하였으며 이는 새로운 구조로부터 기인된 현상이라고 생각된다. 구리점의 모양은 증착온도에 따라 급격하게 변하는 것도 관찰되었다.

• 청정기술
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• 제18권2호
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• pp.183-190
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• 2012

PCB에칭에 의해 발생한 염화철 폐식각액 중 염화철을 산화시키고 구리를 석출시키는 전기화학적 재생공정은 환경오염을 줄이면서도 부산물을 얻어내어 경제성이 크다. 그러나, 염화철 폐식각액은 철과 구리, 두 가지 금속이 함께 함유되어 있기 때문에 전해조에서 일어나는 반응이 복잡하다. 본 연구에서는 회분식 공정을 통하여 전기화학적인 염화철 산화 및 구리 석출반응의 특성을 조사하고 관련된 공정변수들의 최적 조건을 도출해내었다. 염화철의 산화는 항상 원하는 수준으로 되었으며, 탄소 음전극을 사용한 반응에서 $350mA/cm^2$의 전류밀도와 12 g/L의 구리 농도 조건에서, $Fe^{2+}$이온의 비율이 높을수록 구리 석출 효율이 높았다. 또한, 도출해낸 최적 조건을 바탕으로 Bench 장치 연속운전을 통해서 scale-up 가능성을 확인하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.151-152
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• 2012

• 한국표면공학회지
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• 제32권3호
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• pp.244-248
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• 1999

Photoelectrodeposition of copper on semiconductive B-doped diamond films was investigated. There are cleasr morphology differences between photodeposited copper and electrodeposited copper. Photoelecrodeposition proceeded as uniform 2-dimensional growth. On the other hand electrodeposition proceeded as scarce random deposition. By applying this effect we have succeeded in forming a conductive pattern on semiconductive B-doped diamond with the aid of a photo-mask. And it was suggested that the surface reforming caused by photoelectrochemical process could be easily detected by the following metal (copper) deosition method, which is demonstrated as 'Diamond photographic phenomenon'.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.