• Title/Summary/Keyword: Copper Film

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Characteristics and Deposition of CuInS2 film for thin solar cells via sol-gel method0 (Sol-gel법에 의한 박막태양전지용 CuInS2 박막의 증착과 특성)

  • Lee, Sang-Hyun;Lee, Seung-Yup;Park, Byung-Ok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.4
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    • pp.158-163
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    • 2011
  • $CuInS_2$ thin films were prepared using a sol-gel spin-coating method. That makes large scale substrate coating, simple equipment, easy composition control available. The structural and optical properties of $CuInS_2$ thin films that include less toxic materials (S) instead of Se, tetragonal chalcopyrite structure. Copper acetate monohydrate ($Cu(CH_3COO)_2{\cdot}H2O$) and indium acetate ($In(CH_3COO)_3$) were dissolved into 2-propanol and l-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 3000 rpm, and dried at $300^{\circ}C$ for Cu-In as-grown films. The as-grown films were sulfurized inside a graphite container box and chalcopyrite phase of $CuInS_2$ was observed. To determine the optical properties measured optical transmittance of visible light region (380~770 nm) were less than 30 % in the overall. The XRD pattern shows that main peak was observed at Cu/In ratio 1.0 and its orientation was (112). As annealing temperature increases, the intensity of (112) plane increases. The unit cell constant are a = 5.5032 and c = 11.1064 $\AA$, and this was well matched with JCPDS card. The optical transmittance of visible region was below than 30 %.

Fabrication of a Ultrathin Ag Film on a Thin Cu Film by Low-Temperature Immersion Plating in an Grycol-Based Solution (글리콜 용매 기반 저온 치환 은도금법으로 형성시킨 동박막 상 극박 두께 Ag 도금층)

  • Kim, Ji Hwan;Cho, Young Hak;Lee, Jong-Hyun
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.2
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    • pp.79-84
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    • 2014
  • To investigate the plating properties of a diethylene glycol-based Ag immersion plating solution containing citric acid, silver immersion plating was performed in a range from room temperature to $50^{\circ}C$ using sputtered Cu specimens. The used Cu specimens possessed surface structure with large numbers of pinholes which were created with over-acid etching. The Ag immersion plating performed at $40^{\circ}C$ exhibited that the pinholes and copper surface were completely filled with Ag just after 5 min mainly due to galvanic displacement reaction, indicating the best plating properties. Subsequently, the surface morphology of Ag-coated Cu became rougher as the plating time increased to 30 min because of the deposition of silver nanoparticles created by chemical reduction in the solution. The specimen that its overall surface was covered with silver indicated the start of oxidation at temperature higher than around $50^{\circ}C$ in air as compared with pure Cu, indicating enhanced anti-oxidation properties.

Diffusion barrier properties of Mo compound thin films (Mo-화합물의 확산방지막으로서의 성질에 관한 연구)

  • 김지형;이용혁;권용성;염근영;송종한
    • Journal of the Korean Vacuum Society
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    • v.6 no.2
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    • pp.143-150
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    • 1997
  • In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.

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Effect of a Bonding Layer between Electrodes on the Performance of a λ/4-Mode PVDF Ultrasound Transducer (λ/4 모드 PVDF 초음파 트랜스듀서에 있어서 전극 사이의 접합층이 성능에 미치는 영향)

  • Cao, Yonggang;Ha, Kanglyeol;Kim, Moojoon;Kim, Jungsoon
    • The Journal of the Acoustical Society of Korea
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    • v.33 no.2
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    • pp.102-110
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    • 2014
  • The effect of a bonding layer on the performance of a quarter-wave (${\lambda}/4$) mode PVDF ultrasound transducer having not only a piezoelectric layer but also a non-piezoelectric layer between two electrodes was analyzed. The equivalent circuit of a transmission line model by Kikuchi et al.[Sound of IEICE, 55-A, 331-338 (1981)] was introduced for the analysis. The validity of the model was confirmed by comparison with a KLM model for three postulated adhesion cases of a $80{\mu}m$ thick piezoelectric PVDF film to a copper (Cu) backer. The pulse-echo responses of five PVDF transducers, each fabricated with a different thickness ($5{\mu}m{\sim}20{\mu}m$) of the bonding layer, were measured and the results were compared with those by simulation. The two results were in good agreement with each other and it was noted that the effect of the bonding layer on the performance of the transducer could be analyzed by the Kikuchi model. In detail, the $20{\mu}m$ bonding layer decreased the center frequency and the bandwidth by about 19.7 % and 25.0 %, respectively, and increased the insertion loss by 57.2 %.

Fabrication and Characteristics of Shielding Effects for the Complex Conductive Filler (복합 전도성 필러의 제작과 전자파 차폐 특성)

  • Park, Ju-Tae;Park, Jae-Sung;Do, Young-Soo
    • 전자공학회논문지 IE
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    • v.43 no.4
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    • pp.122-127
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    • 2006
  • A series of conductive filler were prepared with electroless plating method. Base conductive materials of the filler were nickel and copper. The cores were prepared with Nylon 6 and rayon in different aspect ratio. Also, various complexes were made with ABS resin and conductive filler with different filler feed ratio. The conductivity of the filler was measured with conductivity analyzer and the size distributions of fillers was measured with laser particle size analyzer. Electromagnetic wave shielding efficiency of each complex film was measured with flange circular coaxial transmission line sample holder within the 1MHz$\sim$1GHz bandwidth range. From this study, the conductivity of filers surpass that of other carbon films. It is available that the filler made of fibrous materials can be applied in plastic molding industry of electric appliances as a EMI filler.

A fractal analysis of bone phantoms from digital images (디지탈영상에서 골판톰의 프랙탈분석)

  • Kim Jae-Duk;Kim Jin-Soo;Lee Chang-Yul
    • Imaging Science in Dentistry
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    • v.35 no.1
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    • pp.33-40
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    • 2005
  • Purpose : (1) To analyse the effect of exposure time, ROI size and one impact factor in the image processing procedure on estimates of fractal dimension; and (2) to analyse the correlated relationship between the fractal dimension and the Cu-Eq value (bone density). Materials and Methods : The cylindric bone phantoms of 6 large and 5 small diameter having different bone densities respectively and human dry mandible segment with copper step wedge were radiographed at 1.0 and 1.2 sec esposure (70 kVp, 7 mA) using one occlusal film and digitized. Eleven rectangular ROIs from 11 cylindric bone phantoms and 4 rectan-gular ROIs from cortical, middle, periodontal regions, and socket of bone were selected. Gaussian blurred Image was subtracted from original image of each ROI and multiplied respectively by 1, 0.8, and 0.5, and then the image was made binary, eroded and dilated once, and skeletonized. The fractal dimension was calculated by means of a box counting method in the software ImageJ. Results : The fractal dimension was decreased gradually with continued bone density decrease showing strong correlations (bone phantom; r> 0.87, bone; r> 0.68) under 70 kVp 1.0 sec M = 0.8. Fractal dimensions showed the significant differerence (p < 0.05) between two different exposure times on the same small ROI of bone phantom. Fractal dimensions between two different sizes of ROI on bone phantom showed the significant differerence (p < 0.05) under 1.2 sec exposure, but did not show it (p > 0.05) under 1.0 sec exposure. Conclusions : Exposure time, ROI size, and modifying factor during subtracting could become impacting on the results of fractal dimension. Fractal analysis with thoroughly evaluated method considering the various impacting factors on the results could be useful in assessing the bone density in dental radiography.

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Intimate Understanding for Growth Mode of Graphene on Copper

  • Song, U-Seok;Jeon, Cheol-Ho;Kim, Su-Yeon;Kim, Yu-Seok;Kim, Seong-Hwan;Lee, Su-Il;Jeong, Dae-Seong;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.181-181
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    • 2012
  • Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the evidences for two different growth modes of graphene on Cu investigated by varying carbon feedstock (C2H2 and CH4) and working pressure. The number of uniform graphene layer grown by C2H2 increased with increasing its injection time. A combined secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) study revealed a carbon-diffused Cu layer created below surface region of Cu substrate with the expansion of Cu lattice. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Based on various previous results and ours, we have successfully found that there are two selective growth modes for graphene on Cu substrate, and a desired mode can be chosen by tuning working pressure corresponding to the kind of carbon feedstock. We believe that this finding will shed light on high quality graphene growth and its multifaceted applications.

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Advanced Treatment Planning Method for Gamma Knife Radiosurgery of Cerebral Arteriovenous Malformations (뇌동정맥기형의 감마나이프 방사선 수술 -치료 계획 방법의 개선을 중심으로-)

  • Jang Geon-Ho;Lim Young Jin;Hong Seong Eon;Leem Won
    • Radiation Oncology Journal
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    • v.13 no.1
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    • pp.87-94
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    • 1995
  • Since March 1992, total 200 patients who visited our hospital as functional or organic lesions of central nervous system were treated by gamma knife stereotactic radiosurgery for 27 months. Thirty-nine patients of total cases was diagnosed as cerebral arteriovenous malformation. The rate of magnification on X-ray film was reduced by cutting fixation adaptor from 1.0 to below 1.45 times. In order to treat the deep- and lateral-seated cerebral arteriovenous malformation, we slightly modified the angiographic indicator, the commercial Leksell system, by cutting each inner sides about 5mm, We performed the more distinction of the scales by adapting 0.5mm or 1mm copper filter to angiographic indicator. The center point of indicator(X=100mm, Y=100mm, Z=100mm) is corrected by adjusting scales of X-, Y-, Z-axis to each inner 100 and outer 100 point within 1-2mm by repeated exposure of X-ray on films in trial-and-errors. We have developed the 'GKANGIO' programed as the Fortran-77 in Microvax - 3100, which can save treatment planning time and perform accurate pretreatment planning using the theoretical target metrix center. The theoretical description of the simplified method is presented for the reduction of experimental and numerical errors in treatment planning of radiosurgery.

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Improved Conductivities of SWCNT Transparent Conducting Films on PET by Spontaneous Reduction

  • Min, Hyeong-Seop;Kim, Sang-Sik;Lee, Jeon-Guk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.43.2-43.2
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    • 2011
  • Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

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RF-Magnetron Sputtering을 이용한 $Cu_2O$ Rod 합성

  • Yu, Jae-Rok;Kim, Se-Yun;Jo, Gwang-Min;Kim, Jeong-Ju;Lee, Jun-Hyeong;Heo, Yeong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.475-475
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    • 2013
  • Cuprous oxide ($Cu_2O$)는 밴드갭이 2.17 eV p-type 산화물 반도체로써 태양에너지 변환기, photocatalysis (광촉매작용), 센서, 스위칭 메모리 등 응용이 다양한 재료이다. 산화물 반도체의 기본 특성은 나노/마이크로 범위 안에서 재료의 표면형태, 크기, 구조와 형상 공간방향등에 크게 영향을 받는다. 그렇기 때문에 원하는 $Cu_2O$ 특성을 얻기 위해서 성장 거동을 아는 것은 매우 중요하다. RF 마그네트론 스퍼터법으로 rod 성장 사례는 잘 알려지지 않았다. 그래서 RF 마그네트론 스퍼터법 $Cu_2O$ rod 형성 실험을 통하여 $Cu_2O$ 형성과 성장 거동을 알아보았다. RF 마그네트론 스퍼터법으로 $Cu_2O$ rod를 glass 기판 위에 Cu metal target을 이용하여 형성시켰다. $Cu_2O$ rod 합성을 위해 기판온도 및 산소분압 O2/(Ar+O2)=3%, 5%, 7% 증착시간 등을 변화시켜 실험하였다. 성장된 rod의 분석은 XRD, SEM으로 확인하였다. 성장 거동은 증착온도와 증착시간에 차이를 보였다. 증착온도 $550^{\circ}C$에서 rod가 생성되는 것을 관찰하였다. 증착시간이 길어질수록 rod 길이가 길어지고 일정 시간이 지나면 rod의 길이 성장보다는 두께(폭)가 성장하는 것을 확인하였다. 증착온도 $550^{\circ}C$ 그리고 산소분압 3%, 5%, 7% 조건에서 rod 합성 실험을 하였을 때 3%, 5% 조건에서 rod의 성장을 확인하였다. 이때 3%, 5% 산소분압에 따라 rod의 모양이 변화하였다. 하지만 7% 조건에서는 rod가 성장하지 않았다. 이유는 3%, 5%에서는 Cu metal peak을 확인하였지만, 7% 조건에서는 Cu metal peak이 없었다. 이로부터 Cu metal이 $Cu_2O$ rod 생성에 영향을 미치는 중요한 요소임을 예상할 수 있었다.

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