• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.157-161
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• 1999

We investigated the effect of mechanical back side damage in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay ($\mu$-PCD) technique, wet oxidation/preferential etching methods, near surface micro defect (NSMD) analysis, and X-ray section topography. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and NSMD density increased proportionally, also correlated to the oxidation induced stacking fault (OISF) density. Thus, NSMD technique can be used separately from conventional etching method in OISF measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.359.1-359.1
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• 2016

The electromagnetic (EM) properties of media, such as propagation, focusing and scattering, strongly rely on the electric permittivity and the magnetic permeability of media. Recently, artificially-created metamaterials (MMs) composed of periodically-arranged unit cells with tailored electric permittivity and magnetic permeability have drawn wide interest due to their capability of adjusting the EM response. MM absorbers using the conventional sandwich structures usually have very high absorption at a certain frequency, and the absorption properties of MMs can be adjusted simply by changing the geometrical parameters of unit cell. In this work, we suggested an incident-angle-independent broadband perfect absorber based on resistive layers. We analyze the absorption mechanism based on the impedance matching with the free space and the distribution of surface currents at specific frequencies. From the simulation, the absorption was expected to be higher than 96% in 1.4-6.0 GHz. The corresponding experimental absorption was found to be higher than 96% in 1.4-4.0 GHz, and the absorption turned out to be slightly lower than 96% in 4.0-6.0 GHz owing to the irregularity in the thickness of resistive layers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.111-115
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• 2001

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.127-132
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• 2003

This paper presents a new model that can precisely simulate the attenuation characteristics of the voltage-controlled PIN diode attenuators. After carefully investigating the problems in the conventional PIN diode models, a new PIN diode model was proposed and verified with experimental data. The proposed model is well operated when it is used in the voltage-controlled mode as well as current-controlled mode, and is simple and straightforward model, since the PN junction diode of this model has the same curve as that of the PIN diode. This model is very effective to design voltage-controlled attenuator and its implementation in commercial simulators is simple and accurate. This model will allow RF and Microwave designers to better use the PIN diodes in various circuits.

• Proceedings of the KSRS Conference
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• 2002.10a
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• pp.429-434
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• 2002

The Synthetic Aperture Radar (SAR) data are considered to contain the greatest amount of information among various microwave techniques developed for measuring ocean variables from aircraft or satellites. They have the potential of measuring wavelength, wave direction and wave height of the ocean waves. But, it is difficult to retrieve significant ocean wave heights and surface current from conventional SAR data, since the imaging mechanism of ocean waves by a SAR is determined by the three basic modulation processes arise through the tilt modulation, hydrodynamic modulation and velocity bunching which are poorly known functions. Along-Track Interferometric (ATI) SAR systems can directly detect the Doppler shift associated with each pixel of a SAR image and have been used to estimate wave fields and surface currents. However, the Doppler shift is not simply proportional to the component of the mean surface current. It includes also contributions associated with the phase velocity of the Brags waves and orbital motions of all ocean waves that are longer than Brags waves. In this paper, we have developed a new method for extracting the surface current vector using multiple-frequency (L- & C-band) ATI SAR data, and have generated surface wave height information.

• Journal of KIISE
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• v.41 no.10
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• pp.774-784
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• 2014

Studies of fault-injection into state machine diagram have been studied for generating robustness test cases. Conventional studies have, however, tended to inject too many faults into diagrams because they only have considered structural aspects of diagrams. In this paper, we propose a method that aims to reduce the number of injected fault without a decrease in effectivenss of robustness test. A proposed method is demonstrated using a microwave oven sate machine diagram and evaluated using a hash table state machine diagram. The result of the evaluation shows that the number of injected faults is decreased by 43% and the number of test cases is decreased by 63% without a decrease in effectiveness of hash table robustness test.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1293_1294
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• 2009

The sintering and high frequency electro-magnetic properties of Ba-hexagonal ferrite were investigated. All samples of the Ba-hexagonal ferrite were prepared by the conventional mixed oxide method and sintered at $1150^{\circ}C$~$1400^{\circ}C$. From the X-ray diffraction patterns of sintered Ba-hexagonal ferrite, the $Ba_3Co_2Fe_{24}O_{41}$ phase was represented as main phase in the almost sintering conditions. The bulk densities with sintering temperature and decreased at $1400^{\circ}C$. The permittivity ($\varepsilon$') and loss tangent of permittivity ($\varepsilon$"/$\varepsilon$') of $Ba_3Co_2Fe_{24}O_{41}$ ceramics increased and decreased with sintering temperature, respectively. The permeability of $Ba_3Co_2Fe_{24}O_{41}$ ceramics decreased with sinteirng temperature. The loss tangent of permeability was not changed compared each other with sintering temperature. The bulk density of $Ba_3Co_2Fe_{24}O_{41}$ ceramics sintered at $1300^{\circ}C$ was 4.79 g/$cm^3$. The permittivity, loss tangent of permittivity and permeability, loss tangent of permeability were 19.896, 0.1718 and 14.218, 0.2046 at 210 MHz, respectively.

• Journal of information and communication convergence engineering
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• v.15 no.4
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• pp.199-204
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• 2017

A compact dual-band half-ring-shaped (HRS) bent slot antenna fed by a coplanar waveguide for wireless local area network (WLAN) and worldwide interoperability for microwave access (WiMAX) applications is presented. The antenna consists of two HRS slots with different lengths and widths. The two HRS slots are connected through an arc-shaped slit, and the upper HRS slot is bent in order to reduce the size of the antenna. The optimized dual-band HRS bent slot antenna operating in the 2.45 GHz WLAN and 3.5 GHz WiMAX bands is fabricated on an FR4 substrate with dimensions of 30 mm by 30 mm. The slot length of the proposed dual-band slot antenna is reduced by 35%, compared to a conventional dual-band rectangular slot antenna. Experimental results show that the proposed antenna operates in the frequency bands of 2.40-2.49 GHz and 3.39-3.72 GHz for a voltage standing wave ratio of less than 2, and measured gain is larger than 1.4 dBi in the two bands.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1408-1410
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• 2001

The 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and EDS. According to the X-ray diffraction patterns of the 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics, the hexagonal $BaMg_6Ti_6O_{19}$ and ilmenite $MgTiO_3$ structures were coexisted. In the case of the 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics sintered at 1325$^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 23.95, 70,200, -55.8ppm/$^{\circ}C$, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.1
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• pp.105-110
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• 2005

In this paper, a new technique to reduce the phase noise in microwave oscillators is proposed using the resonant characteristics of the Photonic Bandgap(PBG). We applied PBG structure to ground of the microstrip line resonator with the low Q(Quality factor). Therefore, we improved about 10 dBc in contrast to phase noise characteristic of the conventional microstrip line oscillator at 2.4 GHz ＠ 100 MHz offset. Output power is 7.09 dBm.