• Korean Chemical Engineering Research
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• 제52권3호
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• 한국세라믹학회지
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• 제28권11호
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• pp.865-872
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• 1991

LAS (lithium aluminosilicate) sol was synthesized using the hydrolysis-condensation reaction of TEOS, chelated Al(OBus)3 and LiNO3 with H2O in alcohol (ethanol+2-propanol) medium. Lowering Li content by a factor of 1/2 significantly enhanced densification and retarded the crystallization of LAS gel by ~30$0^{\circ}C$. Dense LAS specimen with essentially pore-free microstructure was obtained by sintering the sol-gel derived gel at 80$0^{\circ}C$ for 4 h and annealing at 120$0^{\circ}C$ for 2 h. Similary, a mixed colloidal processing was attempted as a convenient, alternative route for the fabrication of dense LAS sintered body. The $\beta$-spodumene seeding (~0.8 ${\mu}{\textrm}{m}$) in the sol-gel derived LAS modified the sequence of phase transformations and lowered the temperature of crystallization by ~12$0^{\circ}C$. Combining the epitaxial seeding with the sol-gel process, we could lower the crystallization temperature to the sintering temperature range (~80$0^{\circ}C$) and, demonstrate a possibility of making the viscous sintering/crystallization as a continuous as a continuous unit process.

• 지식경영연구
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• 제12권1호
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• pp.39-52
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• 2011

Many LCD manufacturers continue to develop the technologies of LCD manufacturing processes for the reduction of production cost, power consumption and high-resolution. The LTPS (Low Temperature Polycrystalline Silicon) crystallization technology is important for rearranging the internal structure of liquid crystal grain by adding certain energy to amorphous silicon and turning it into poly-silicon in order to manufacture LCD with better performance. We consider 14 existing technologies of LTPS crystallization in the LCD manufacturing and present an intelligent analysis methodology using patent map and AHP (Analytic Hierarchy Process) analysis for determining an optimal LTPS crystallization technology. By using patent map analysis, we easily understand the development process and mega-trend of LTPS crystallization technologies and their relationship. By using AHP analysis, we evaluate 14 LTPS technologies. Through the use of proposed methodology, we determine the Continuous Wave Laser Lateral Crystallization technology as an optimal one.

• 한국응용과학기술학회지
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• 제24권3호
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• pp.219-232
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• 2007

In T-mixer crystallization, supersaturation is generated by mixing of another solvent or non-solvent in order to reduce the solubility of the compound. Also, T-mixer is a type of continuous crystallization. In order to induce micro-mixing, two solutions were mixed rapidly by T-mixer, which formed high supersaturation. As the results, mean size of HMX crystals decreased with increasing de-supersaturation rate $(R_s)$. Eventually, HMX particles ranging from 0.5 to $5{\mu}m$ can be obtained by T-mixer crystallization. Mixing efficiency in T-mixer increased with increasing $R_s$ values. In T-mixer crystallization without surfactants, homogeneous nucleation was formed when S and $R_s$ was over 54 and $1.6{\times}10^3/sec$. In T-mixer crystallization with surfactants, homogeneous nucleation was formed when S and $R_s$ was over 26 and 7.4/sec.

• 한국결정성장학회지
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• 제12권4호
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• pp.190-195
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• 2002

NaX seed결정(10~20 $\mu$m)을 $3.5Na_2$O : $Al_2O $: $2.1SiO_2$ : $1000H_2$O 용액에 0.5~2.0g 첨가한 후 연속결정화법으로 50 $\mu$m의 균일한 결정을 성장시켰다. 연속결정화법에 의한 결정성장을 시험하기 위하여, 모액을 7일, 5일, 3일, 2일과 1일 간격으로 공급하였다. Seed 첨가의 결과는 첨가하지 않은 용액과 비교하여 보다 균일하고 큰 결정들을 얻었다. 합성용액에 seed의 첨가는 반응물과 물리적인 접촉 면적을 초래하여 합성 겔의 핵성장 없이 seed 결정의 결정성장을 확인할 수 있다.

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2369-2376
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• 2011

Effect of heat treatment of carbon nanofibers (CNF) on electrical properties and crystallization behavior of polypropylene was reported. Two types of CNFs (untreated and heat treated at 2300 $^{\circ}C$) were incorporated into polypropylene (PP) using intensive mixing. A significant drop in volume resistivity was observed with composites containing untreated 5 wt % and heat treated 3 wt % CNF. In non-isothermal crystallization studies, both untreated and heat treated CNFs acted as nucleating agents. Composites with heat treated CNFs showed a higher crystallization temperature than composites with untreated CNFs did. TEM results of CNF revealed that an irregular structure of CNFs can be converted into the continuous graphitic structure after heat treatment. Furthermore, STM showed that the higher carbonization temperature leads to the higher graphite degree which presents the larger carbon network size, suggesting that a more graphitic structure of CNFs led to a higher crystallization temperature of PP.

• Korean Chemical Engineering Research
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• 제48권6호
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• pp.712-716
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• 2010

염석결정화란 제 3의 성분을 가하여 혼합용매로 만들어 용질의 용해도를 저하시키는 방법으로 염료 용액으로부터 염료 결정화에 염석결정화를 이용하였다. 이번 연구에서 반응성 염료(Reactive Red 218)의 용해도와 결정화 속도를 연구하였다. 그 결과 염료 용액의 용해도는 KCl 농도가 높을수록 용해도가 낮아지는 것을 확인할 수 있었다. 또한 연속식 결정화기에서 반응성 염료(Reactive Red 218)에 대한 결정화 속도식은 결정 성장 속도 $G=6.864{\times}10^{-5}{\Delta}C^{1.207}$와 핵 생성속도 $B^0=4.8{\times}10^{22}{\Delta}C[1.1{\times}10^{-13}+{({\Delta}C)}^{0.7}{M_T}^2]$의 실험식으로 표현할 수 있다.

• 한국산학기술학회논문지
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• 제18권7호
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• pp.714-719
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• 2017

입자의 크기와 형상을 제어할 수 있는 무기물질의 제한된 제조방법은 나노입자와, 의료, 전자부품, 반도체, 의약품, 화장품 등과 같은 다양한 산업영역에서 신물질을 개발하는데 중요한 요소이다. 탄산칼슘은 수많은 활용성 때문에 산업에서 가장 많이 주목받고 있는 물질중 하나이다. 용액결정화는 용액으로부터 녹아 있는 용질을 순수한 고체 형태로 추출하는 분리 공정으로, 화학공업과 제약공업 등에 널리 적용되어, 사용되고 있는 분리공정 중에 하나이다. 입자의 평균입경과 입도분포, 형상은 연속식 결정화기에서 중요한 요소이다. 본 연구에서는 연속식 결정화기에서 염화칼슘 공정으로 탄산칼슘 입자를 제조할 때, 정상상태에서 탄산칼슘 입자의 입도분포와 입경변화에 대하여 연구하였다. 입자의 평균입경과 입도분포는 입도분석기를 이용하여 측정하였으며, 입자의 형상과 크기는 전자현미경(SEM)을 이용하여 변화를 관찰하였다. 정상상태에서, 주입되는 시료의 농도와 혼합속도가 증가 할수록 입자의 평균입경은 증가하고, 제조되는 입자는 aragonite 보다는 calcite 입자가 주로 생성된다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.88.2-88
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• 2000

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.