• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.71-76
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• 2015

Recently, light emitting diodes (LEDs) have been studied to improve their efficiencies for the uses in various fields. Particularly in the aspect of chip structure, via hole type vertical LED chip is developed for improvement of light output power, and heat dissipations. However, current vertical type LEDs have still drawback, which is current concentration around the n-contact holes. In this research, to solve this phenomenon, we introduced isolation layer under n-contact electrodes. With this sub-electrode, even though the active area was decreased by about 2.7% compared with conventional via-hole type vertical LED, we could decrease the forward voltage by 0.2 V and wall-plug efficiency was improved approximately 4.2%. This is owing to uniform current flow through the area of n-contact.

• Korean Journal of Adult Nursing
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• v.21 no.4
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• pp.435-445
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• 2009

Purpose: This study was to examine whether VRE infection control strategies have an effect on the decrease in incidence rates for VRE acquisition and VRE nosocomial infection in ICU. Methods: All the patients were examined for VRE carriers on ICU admission. Among them, patients hospitalized for over 48 hours were investigated for VRE acquisition rates and VRE nosocomial infection rate using VRE infection control strategies in ICU for the experimental group from September 2007 to April 2008. Before that, incidence of VRE acquisition and VRE nosocomial infection for the control group without Intervention were investigated from May to August 2007 retrospectively. Results: VRE acquisition rate in clinical specimens was 0.6% in the experimental group, that was significantly lower when compared to the control group. VRE carrier rate at admission to ICU was 15.4%. Out of 182 VRE carriers, 180 patients were identified by the active surveillance culture. Conclusion: These results suggested that active surveillance culture at admission was considered to be an essential measure for detection of VRE carrier. But without strict isolation and adherence rating after each intervention, hand washing and contact isolation alone did not significantly decrease VRE nosocomial infection, although it did significantly decrease incidence of VRE acquired from clinical specimen.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.615-618
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• 2005

In this work, the effects of corner transistors in SOI MOSFETs were investigated. We fabricated SOI MOSFETs with various widths and a fixed length and characterized them. The SOI thickness was $4000{\AA}$ and the buried oxide(BOX) thickness was $4000{\AA}$. The isolation of active region was simply done by silicon etching and TEOS sidewall formation. Several undesirable characteristics have been reported for LOCOS isolation in fabrication on SOI wafers so far. Although we used an STI-like process instead of LOCOS, there were still a couple of abnormal phenomena such as kinks and double humps in drain current. Above all, we investigated the location of the parasitic transistors and found that they were at the corners of the SOI in width direction by high-resolution SEM inspection. It turned out that their characteristics are strongly dependent on the channel width. We made a contact pad through which we can control the body potential and figured out the dependency of operation on the body potential. The double humps became more prominent as the body bias went more negative until the full depletion of the channel where the threshold voltage shift did not occur any more. Through these works, we could get insights on the process that can reduce the effects of corner transistors in SOI MOSFETs, and several possible solutions are suggested at the end.

• Structural Engineering and Mechanics
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• v.48 no.4
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• pp.479-500
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• 2013

This paper presents the experimental as well as analytical study conducted on layer-bonded scrap tire rubber pad (STRP) isolators to develop low-cost seismic isolators applicable to structures in developing countries. The STRP specimen samples were produced by stacking the STRP layers one on top of another with the application of adhesive. In unbonded application, the STRP bearings were placed between the substructure and superstructure without fastening between the contact surfaces which allows roll-off of the contact supports. The vertical compression and horizontal shear tests were conducted with varying axial loads. These results were used to compute the different mechanical properties of the STRP isolators including vertical stiffness, horizontal effective stiffness, average horizontal stiffness and effective damping ratios. The load-displacement relationships of STRP isolators obtained by experimental and finite element analysis results were found to be in close agreement. The tested STRP samples show energy dissipation capacity considerably greater than the natural rubber bearings. The layer-bonded STRP isolators serve positive incremental force resisting capacity up to the shear strain level of 150%.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• ETRI Journal
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• v.28 no.3
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• pp.389-392
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• 2006

In this letter, a laterally-driven bistable electromagnetic microrelay is designed, fabricated, and tested. The proposed microrelay consists of a pair of arch-shaped leaf springs, a shuttle, and a contact bar made from silicon, low temperature oxide (LTO), and gold composite materials. Silicon-on-insulator wafers are used for electrical isolation and releasing of the moving microstructures. The high-aspect-ratio microstructures are fabricated using a deep reactive ion etching (DRIE) process. The tandem-typed leaf springs with a silicon/gold composite layer enhance the mechanical performances while reducing the electrical resistance. A permanent magnet is attached at the bottom of the silicon substrate, resulting in the generation of an external magnetic field in the direction vertical to the surface of the silicon substrate. The leaf springs show bistable characteristics. The resistance of the pair of leaf springs was $7.5\;{\Omega}$, and the contact resistance was $7.7\;{\Omega}$. The relay was operated at ${\pm}0.12\;V$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.261-278
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• 2003

Concepts.Wafer-Level Chip-Scale Concept with Handling Substrate.Low Accuracy Placement Layout with Isolation Trench.Possible Pitch of Interconnections down to $10{\mu}{\textrm}{m}$ (Sn-Grains).Wafer-to-Wafer Equipment Adjustment Accuracy meets this Request of Alignment Accuracy (+/-1.5 ${\mu}{\textrm}{m}$).Adjustment Accuracy of High-Speed Chip-to-Wafer Placement Equipment starts to meet this request.Face-to-Face Modular / SLID with Flipped Device Orientation.interchip Via / SLID with Non-Flipped Orientation SLID Technology Features.Demonstration with Copper / Tin-Alloy (SLID) and W-InterChip Vias (ICV).Combination of reliable processes for advanced concept - Filling of vias with W as standard wafer process sequence.No plug filling on stack level necessary.Simultanious formation of electrical and mechanical connection.No need for underfiller: large area contacts replace underfiller.Cu / Sn SLID layers $\leq$ $10{\mu}{\textrm}{m}$ in total are possible Electrical Results.Measurements of Three Layer Stacks on Daisy Chains with 240 Elements.2.5 Ohms per Chain Element.Contribution of Soldering Metal only in the Range of Milliohms.Soldering Contact Resistance ($0.43\Omega$) dominated by Contact Resistance of Barrier and Seed Layer.Tungsten Pin Contribution in the Range of 1 Ohm

• Journal of the Korean Burn Society
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• v.22 no.2
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• pp.21-24
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• 2019

Incidence of low-temperature contact burn by use of an electric pad is increased recently, especially in depressed sensory. Acquired immune deficiency syndrome patient using antiretroviral agent suffered with sensory depression as side effect. There are many limitations in wounds treatment of these patients. These patients are vulnerable to infection due to their weak immunity, so it is necessary to keep them in a state of isolation when a wound occurs. We report a case of a third degree burn by electric pad with a surface area of approximately 5% of the body surface of a patient who underwent a sensory depression, which is a side effect of antiretroviral drugs used for treatment in patients with AIDS. In this regard, we report the case with literature review, which is safely recovered using negative-pressure wound therapy and split-thickness skin graft.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.300-306
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• 2004

This paper reports a novel tunable bandpass filter using two-state switched inductor with direct-contact MEMS switches for wireless LAN applications. In our filter configuration, the switched inductor is implemented to obtain more stable and much larger frequency tuning ratio compared with variable capacitor-based tunable filter. The proposed tunable filter was fabricated using a micromachining technology and electrical performances of the fabricated filter were measured. The filter consists of spiral inductors, MIM capacitors and direct-contact type MEMS switches, and its frequency tunability is achieved by changing the inductance that is induced by ON/OFF actuations of the MEMS switches. The actuation voltage of the MEMS switches was measured of 58 V, and they showed the insertion loss of 0.1 dB and isolation of 26.3 dB at 2 GHz, respectively. The measured center frequencies of the fabricated filter were 2.55 GHz and 5.1 GHz, respectively. The passband insertion loss and 3-dB bandwidth were 4.2 dB and 22.5 % at 2.55 GHz, and 5.2 dB and 23.5 % at 5.1 GHz, respectively.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.16 no.12
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• pp.4062-4080
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• 2022

COVID-19, a highly infectious disease, has affected the globe tremendously since its outbreak during late 2019 in Wuhan, China. In order to respond to the pandemic, governments around the world introduced a variety of public health measures including contact-tracing, a method to identify individuals who may have come into contact with a confirmed COVID-19 patient, which usually leads to quarantine of certain individuals. Like many other governments, the South Korean health authorities adopted public health measures using latest data technologies. Key data technology-based quarantine measures include:(1) Electronic Entry Log; (2) Self-check App; and (3) COVID-19 Wristband, and heavily relied on individual's personal information for contact-tracing and self-isolation. In fact, during the early stages of the pandemic, South Korea's strategy proved to be highly effective in containing the spread of coronavirus while other countries suffered significantly from the surge of COVID-19 patients. However, while the South Korean COVID-19 policy was hailed as a success, it must be noted that the government achieved this by collecting and processing a wide range of personal information. In collecting and processing personal information, the data minimum principle - one of the widely recognized common data principles between different data protection laws - should be applied. Public health measures have no exceptions, and it is even more crucial when government activities are involved. In this study, we provide an analysis of how the governments around the world reacted to the COVID-19 pandemic and evaluate whether the South Korean government's digital quarantine measures ensured the protection of its citizen's right to privacy.