• 지구물리
• /
• 제6권2호
• /
• pp.79-87
• /
• 2003

An in-situ four-electrode contact resistivity probe system was designed, and field-tested in submarine sediments. Seismic survey was also performed to support and compare the results of electric survey. The probe was designed to be driven to selected depths below the seafloor using a Vibracore system. The four insulated electrodes were, spaced equidistant across the wedge, were extended beyond the probe tip to minimize effects of sediment disturbance by the wedge insertion. In-situ measurements of resistivity were recorded on board by precision electronic equipment consisting of signal generators and processors, and by temperature- monitoring systems. Overall limits of uncertainty at respective depths below the seafloor are up to ±10% of the measured values. Best estimates of conductivity are considered to be ±3 percent of the reported values. Resistivity measurements were made at six sites in carbonate sediments to a maximum depth of penetration of about 5 m. Average values of conductivity range between 0.88 and 1.21 mho/m. The results show the seabed is composed of alternating layers of relatively high-conductivity material (0.8 to 1.4 mho/m) in thicknesses of more or less one meter and layers about 30 cm thick having relatively low conductivities (0.4 to 0.8 mho/m).

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.231-236
• /
• 1997

To improve electrical properties and uniformity of high-low doped n-type GaAs, new ohmic contacts with a low-resistance and the superior uniformity was developed using a concept of hybrid ohmic contact. The hybrid ohmic contact displayed good surface and interface morphology and had minimum contact resistivity of 3${\times}$10-6 $\Omega$$\textrm{cm}^2$ in a wide annealing temperature ranged from 340$^{\circ}C$ to 420$^{\circ}C$, which was much wider than that of conventional ohmic contacts. The microstructural analysis showed that the Pd/Ge ohmic contact at low annealing temperature (∼300$^{\circ}C$) and also annealing temperature (∼400$^{\circ}C$), resulting ij hybrid ohmic contacts.

• 한국전기전자재료학회논문지
• /
• 제24권12호
• /
• pp.1010-1017
• /
• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• 대한금속재료학회지
• /
• 제50권10호
• /
• pp.785-792
• /
• 2012

A new flip chip structure consisting of interlocking joints locally surrounded by non-conductive adhesive was investigated in order to improve the contact resistance characteristics and prevent the parasitic capacitance increase. The average contact resistance of the interlocking joints was substantially reduced from $135m{\Omega}$ to $79m{\Omega}$ by increasing the flip chip bonding pressure from 85 MPa to 185 MPa. Improvement of the contact resistance characteristics at higher bonding pressure was attributed not only to the increased contact area between Cu chip bumps and Sn pads, but also to the severe plastic deformation of Sn pads caused during formation of the interlocking-joint structure. The parasitic capacitance increase due to the non-conductive adhesive locally surrounding the flip chip joints was estimated to be as small as 12.5%.

• Nuclear Engineering and Technology
• /
• 제55권4호
• /
• pp.1518-1527
• /
• 2023

A method was proposed for in-situ evaluating the thickness and resistivity of the oxide/hydroxide film formed on the surface of aluminum alloy exposed to sump water formed in the containment after a loss-of-coolant accident. The evaluation entailed fitting a model for the film impedance, which has film thickness and other variables describing the resistivity profile of the film along its thickness direction as fitting parameters, to the practically measured electrochemical impedance data. The obtained resistivity profiles implied that the films formed at pHs_25℃ 7, 8, 9, 10, and 11 all had a duplex structure; compared to the outer layer in contact with the solution, the inner layer of the film had a much higher resistivity and was inferred to be denser and provide most of the protectiveness of the film. Both the thickness and the total resistance of the film decreased with the increasing solution pH_25℃, suggesting that the films formed in more alkaline solutions had less protectiveness against corrosion, consistent with the increasing aluminum alloy corrosion rates previously identified.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.197-200
• /
• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and $N_2$ gas ambient annealing method at $950^{\circ}C$ for 10 min. The specific contact resistivity ( $\rho_{c}$ ), sheet resistance($R_s$), contact resistance($R_c$), transfer length($L_T$) were calculated from resistance($R_T$) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho_{c}=3.8{\times}10^{-5}\Omega cm^{3}$, $R_{c}=4.9{\Omega}$, $R_{T}=9.8{\Omega}$ and $L_{T}=15.5{\mu}m$, resulting average values of another sample were $\rho_{c}=2.29{\times}10^{-4}\Omega cm^{3}$, $R_{c}=12.9{\Omega}$ and $R_{T}=25.8{\Omega}$. The physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
• /
• pp.73-77
• /
• 2002

n형 SiC를 이용한 오옴성 접합을 알아보고자 Cu/Si/Cu 형태의 접합실험을 실시하였다. 오옴성 접합의 형성을 위하여 Cu/Si/Cu를 증착 하고 열처리를 시행하였다. 열처리는 RTP를 이용한 진공상태의 2-step 방법으로 시행하였다. 접합에 계산을 위하여 TLM구조로, 면 저항(Rs), 접촉저항(Rc), 이동거리(L$_{T}$), 패드간거리(d), 저항(R$_{T}$)값을 구하면 접합비 저항(Pc) 값을 알 수 있다. 이로 인한 결과 값은 접촉저항 값은 2$\Omega$이었고, 이동간 거리는 1$\mu\textrm{m}$이었으며 접합비저항($\rho$c)=1.0x$10^{-6}$ $\Omega$$\textrm{cm}^2$ 값을 얻을 수 있었다. 물리적 변화를 AES 및 XRD를 이용하여 알아보았다. SiC 계면 상에 Cu의 변화로 인한 silicide형성이 이루어짐을 알 수 있었다.있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.197-200
• /
• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and N$_2$ gas ambient annealing method at 950$^{\circ}C$ for 10 min. The specific contact resistivity($\rho$$\sub$c/), sheet resistance(R$\sub$S/), contact resistance(R$\sub$S/), transfer length(LT) were calculated from resistance(R$\sub$T/) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho$$\sub$c/=3.8x10$\^$-5/ Ω$\textrm{cm}^2$ , R$\sub$c/=4.9Ω, R$\sub$T/=9.8Ω and L$\sub$T/=15.5$\mu\textrm{m}$, resulting average values of another sample were $\rho$$\sub$c/=2.29x10$\^$-4/ Ω$\textrm{cm}^2$ , R$\sub$c/=12.9Ω, R$\sub$T/=25.8Ω. The Physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• 한국표면공학회지
• /
• 제49권1호
• /
• pp.54-61
• /
• 2016

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1509_1510
• /
• 2009

This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.