• Title/Summary/Keyword: Contact Resistivity(p/sub c/)

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Low Resistivity Ohmic Ni/Si/Ni Contacts to N-Type 4H-SiC (낮은 접촉저항을 갖는 Ni/Si/Ni n형 4H-SiC의 오옴성 접합)

  • Kim C. K.;Yang S. J.;Cho N. I.;Yoo H. J.
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.10
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    • pp.495-499
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    • 2004
  • Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

Effect of Rapid Thermal Annealing on the Ti doped In2O3 Films Grown by Linear Facing Target Sputtering

  • Seo, Ki-Won;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.342.1-342.1
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    • 2014
  • The electrical, optical and structural properties of Ti doped $In_2O_3$ (TIO) ohmic contacts to p-type GaN were investigated using linear facing target sputtering (LFTS) system. Sheet resistance and resistivity of TIO films are decreased with increasing rapid thermal annealing (RTA) temperature. Although the $400^{\circ}C$ and $500^{\circ}C$ annealed samples showed rectifying behavior, the $600^{\circ}C$ and $700^{\circ}C$ annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact between TIO and p-GaN. The annealing of the contact at $700^{\circ}C$ resulted in the lowest specific contact resistivity of $9.5{\times}10^{-4}{\Omega}cm^2$. Based on XPS depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the properties of TIO layer on rapid thermal annealing temperature.

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