• Title/Summary/Keyword: Contact Region

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Multi-Label Image Classification on Long-tailed Optical Coherence Tomography Dataset (긴꼬리 분포의 광간섭 단층촬영 데이터세트에 대한 다중 레이블 이미지 분류)

  • Bui, Phuoc-Nguyen;Jung, Kyunghee;Le, Duc-Tai;Choo, Hyunseung
    • Proceedings of the Korea Information Processing Society Conference
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    • 2022.11a
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    • pp.541-543
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    • 2022
  • In recent years, retinal disorders have become a serious health concern. Retinal disorders develop slowly and without obvious signs. To avoid vision deterioration, early detection and treatment are critical. Optical coherence tomography (OCT) is a non-invasive and non-contact medical imaging technique used to acquire informative and high-resolution image of retinal area and underlying layers. Disease signs are difficult to detect because OCT images have many areas which are not related to any disease. In this paper, we present a deep learning-based method to perform multi-label classification on a long-tailed OCT dataset. Our method first extracts the region of interest and then performs the classification task. We achieve 98% accuracy, 92% sensitivity, and 99% specificity on our private OCT dataset. Using the heatmap generated from trained convolutional neural network, our method is more robust and explainable than previous approaches because it focuses on areas that contain disease signs.

Clinical study of keratocystic odontogenic tumors

  • Tomomatsu, Nobuyoshi;Uzawa, Narikazu;Michi, Yasuyuki;Kurohara, Kazuto;Okada, Norihiko;Amagasa, Teruo
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
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    • v.38 no.1
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    • pp.55-63
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    • 2012
  • The odontogenic keratocyst (OKC) was originally classified as a developmental cyst, and OKCs were histologically divided into orthokeratotic (O-OKCs) and parakeratotic (P-OKCs) types. Clinical features differ between O-OKCs and P-OKCs with P-OKCs having a tendency to recur after surgical treatment. According to the revised histopathological classification of odontogenic tumors by the World Health Organization (2005), the term keratocystic odontogenic tumor (KCOT) has been adopted to describe P-OKCs. In this retrospective study, we examined 186 KCOTs treated at the Maxillofacial Surgery Department of the Tokyo Medical and Dental University Hospital from 1981 through 2005. The patients ranged in age from 7 to 85 years (mean, 32.7) and consisted of 93 males and 93 females. The most frequently treated areas were the mandibular molar region and ramus. The majority of KCOTs in the maxillary region were treated by enucleation and primary closure. The majority of KCOTs in the mandibular region were enucleated, and the wound was left open. Marginal resection was performed in the 4 patients with large lesions arising in the mandible. In patients who were followed for more than a year, recurrences were observed in 19 of 120 lesions (15.8%). The recurrences were found at the margins of the primary lesion in contact with the roots of the teeth or at the upper margins of the mandibular ramus. Clinicians should consider aggressive treatment for KCOTs because the recurrence rate of P-OKCs is higher than that of other cyst types such as O-OKCs, dentigerous cysts, primordial cysts that were non-keratinized, and slightly keratinized stratified squamous epithelium. Although more aggressive treatment is needed for KCOTs as compared to other cystic lesions, it is difficult to make a precise diagnosis preoperatively on the basis of clinical features and X-ray imaging. Therefore, preoperative biopsy is necessary for selecting the appropriate treatment for patients with cystic lesions.

Electrical Characterization of Lateral NiO/Ga2O3 FETs with Heterojunction Gate Structure (이종접합 Gate 구조를 갖는 수평형 NiO/Ga2O3 FET의 전기적 특성 연구)

  • Geon-Hee Lee;Soo-Young Moon;Hyung-Jin Lee;Myeong-Cheol Shin;Ye-Jin Kim;Ga-Yeon Jeon;Jong-Min Oh;Weon-Ho Shin;Min-Kyung Kim;Cheol-Hwan Park;Sang-Mo Koo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.413-417
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    • 2023
  • Gallium Oxide (Ga2O3) is preferred as a material for next generation power semiconductors. The Ga2O3 should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga2O3 is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu2O. Research the lateral-type FET structure of NiO/Ga2O3 heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×1017 to 1×1019 cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at ID = 1×10-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga2O3 region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at ID =1×10-3 A/mm.

Photoimmunology -Past, Present and Future-

  • Daynes, Raymond A.;Chung, Hun-Taeg;Roberts, Lee K.
    • The Journal of the Korean Society for Microbiology
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    • v.21 no.3
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    • pp.311-329
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    • 1986
  • The experimental exposure of animals to sources of ultraviolet radiation (UVR) which emit their energy primarily in the UVB region (280-320nm) is known to result in a number of well-described changes in the recipient's immune competence. Two such changes include a depressed capacity to effectively respond immunologically to transplants of syngeneic UVR tumors and a markedly reduced responsiveness to known inducers of delayedtype (DTH) and contact hypersensitivity (CH) reactions. The results of experiments that were designed to elucidate the mechanisms responsible for UVR-induced immunomodulation have implicated: 1) an altered pattern of lymphocyte recirculation, 2) suppressor T cells(Ts), 3) deviations in systemic antigen presenting cell (APC) potential. 4) changes in the production of interleukin-1-like molecules, and 5) the functional inactivation of epidermal Langerhans cells in this process. The exposure of skin to UVR, therefore, causes a number of both local and systemic alterations to the normal host immune system. In spite of this seeming complexity and diversity of responses, our recent studies have established that each of the UVR-mediated changes is probably of equal importance to creating the UVR-induced immunocompromised state. Normal animals were exposed to low dose UVR radiation on their dorsal surfaces under conditions where a $3.0\;cm^2$ area of skin was physically protected from the light energy. Contact sensitization of these animals with DNFB, to either the irradiated or protected back skin, resulted in markedly reduced CH responses. This was observed in spite of a normal responsiveness following the skin sensitization to ventral surfaces of the UVR-exposed animals. Systemic treatment of the low dose UVR recipients with the drug indomethacin (1-3 micrograms/day) during the UVR exposures resulted in a complete reversal of the depressions observed following DNFB sensitization to "protected" dorsal skin while the altered responsiveness found in the group exposed to the skin reactive chemical through directly UVR-exposed sites was maintained. These studies implicate the importance of EC as effective APC in the skin and also suggest that some of the systemic influences caused by UVR exposure involve the production of prostaglandins. This concept was further supported by finding that indomethacin treatment was also capable of totally reversing the systemic depressions in CH responsiveness caused by high dose UVR exposure (30K joules/$m^2$) of mice. Attempts to analyze the cellular mechanisms responsible established that the spleens of all animals which demonstrated altered CH responses, regardless of whether sensitization was through a normal or an irradiated skin site, contained suppressor cells. Interestingly, we also found normal levels of T effector cells in the peripheral lymph nodes of the UVR-exposed mice that were contact sensitized through normal skin. No effector cells were found when skin sensitization took place through irradiated skin sites. In spite of such an apparent paradox, insight into the probable mechanisms responsible for these observations was provided by establishing that UVR exposure of skin results in a striking and dose-dependent blockade of the efferent lymphatic vessels in all peripheral lymph nodes. Therefore, the afferent phases of immune responses can apparently take place normally in UVR exposed animals when antigen is applied to normal skin. The final effector responses, however, appear to be inhibited in the UVR-exposed animals by an apparent block of effector cell mobility. This contrasts with findings in the normal animals. Following contact sensitization, normal animals were also found to simultaneously contain both antigen specific suppressor T cells and lymph node effector cells. However, these normal animals were fully capable of mobilizing their effector cells into the systemic circulation, thereby allowing a localization of these cells to peripheral sites of antigen challenge. Our results suggest that UVR is probably not a significant inducer of suppressor T-cell activity to topically applied antigens. Rather, UVR exposure appears to modify the normal relationship which exists between effector and regulatory immune responses in vivo. It does so by either causing a direct reduction in the skin's APC function, a situation which results in an absence of effector cell generation to antigens applied to UVR-exposed skin sites, inhibiting the capacity of effector cells to gain access to skin sites of antigen challenge or by sequestering the lymphocytes with effector cell potential into the draining peripheral lymph nodes. Each of these situations result in a similar effect on the UVR-exposed host, that being a reduced capacity to elicit a CH response. We hypothesize that altered DTH responses, altered alloresponses, and altered graft-versus-host responses, all of which have been observed in UVR exposed animals, may result from similar mechanisms.

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Metamorphism of the amphibolites in the Hwanggangri area, the northeastern region of Ogcheon metamorphic belt, Korea (옥천변성대 북동부 황강리 지역내 앰피볼라이트의 변성작용)

  • 유영복;김형식;권용완;박종길
    • The Journal of the Petrological Society of Korea
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    • v.10 no.2
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    • pp.57-81
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    • 2001
  • In the amphibolites of the Hwanggangri area, three metamorphic zones are established like hornblende-actinolite zone (H-AZ), hornblende zone (HZ) and diopside zone (DZ) by the main mineral assemblages. Hornblende zone and hornblende-actinolite zone develope away from the diopside zone that experienced the highest thermal effect. Thus, this pattern identifies the decreasing metamorphic grade of the contact metamorphism with increasing distance from the granitic pluton. The mineral assemblages of this rock are classified into six representative groups such as $\circled1$ actinolite+plagioclase+chlorite, $\circled2$ actinolite+hornblende+plagioclase+chlorite$\pm$epidote$\pm$biotite, $\circled3$ actinolite+hornblende+plagioclass$\pm$biotite$\pm$epidote, $\circled4$ hornblende+plagioclase$\pm$biotite$\pm$chlorite, $\circled5$ hornblende+plagioclase+diopside+actinolite$\pm$epidote$\pm$chlorite, $\circled6$hornblende+plagioclase+diopside$\pm$biotite$\pm$epidote. Two metamorphic events m recognized in the amphibolites of the study area that the first metamorphism is the regional metamorphism dominantly occurred in the whole Ogcheon metamorphic belt and it gave rise to the growth of actinolite at the core or center of the amphibole grains of coarse and medium size. Its metamorphic grade ranges from the greenschist facies to epidote-amphibolite facies. The second metamorphism overlapped is the contact metamorphism caused by the adjacent granitic pluton, and its metamorphic grade is thought to reach to the low pressure part of upper amphibolite facies. According to the calculation by TWEEQU thermobarometry and amphibole-plagioclase thermometry, the metamorphic temperature of initial regional metamorphism is $439-537^{\circ}C$ under pressure of 4.6-7.3 kb and its peak temperature and pressure are considered to reach to the range of 492-537 and 5.2-7.3 kb. And the temperature range of contact metamorphism occurred by intrusion of cretaceous granitic body, is $588-739^{\circ}C$ under pressure of 2.6-5.2 kb and its peak temperature and pressure are estimated as having the range of $697-739^{\circ}C$ and 3.8-5.2 kb that this amphibolites are estimated to pass through the metamorphic evolution of both the rise of temperature and the drop of pressure.

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Immunohistochemical Study on the Activation of Cell mediated immunity in Murine Lymph node on Allergic Contact Dermatitis by DNCB -Based on the change of T lymphocytes and Il-2 receptors- (알러지성 접촉피부염 유발 피부 주변 림프절에서의 세포성 면역 활성에 관한 면역조직화학적 연구 - T 림프구와 IL-2 수용기의 분포 변화를 중심으로 -)

  • kim, Jin-Taek;Ahn, Sang-Hyun;Park, In-Sick;Chung, Jae-Man;Kim, Ho-Hyun
    • The Journal of Dong Guk Oriental Medicine
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    • v.7 no.1
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    • pp.33-41
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    • 1998
  • Lymph node tissues of BALB/C mouse treated with DNCB were immunohistochemically observed to investigate the activation of cell mediated immunity in lymph node of murine with allergic contact dermatitis. The inguinal region of BALB/C mice were sensitized by one application of $25{\mu}l$ of 5% 2,4-dinitrochlorobenzene(DNCB) onto an abdominal skin and 2 weeks later, the mice were challenged with $4{\mu}l$ of 2.5% DNCB. The inguinal lymph node were obtained at hour 24, 48, and 72 after 2nd DNCB treatment and embedded with paraffin, and then stained by following ABC method that used monoclonal antibody including L3T4(CD4), Ly2(CD8), IL-2R(CD25). The distribution of helper T lymphocytes, cytotoxic T lymphocytes and IL-2 receptors began to increase at hour 24 after after 2nd DNCB treatment and these increase appeared in paracortical area and medullary sinius. These increase were greatest at hour 48. These results indicated that the IL-2 secretion began to increase by activation of helper T lymphocytes in lymph node of DNCB re-exposure area and subsequently to activate suppress T lymphocytes.

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Crystallographic and Magnetic Properties of Cu0.1Fe0.9Cr2S4 (Cu0.1Fe0.9Cr2S4의 결정학적 및 자기적 성질에 관한 연구)

  • Son, Bae-Soon;Kim, Sam-Jin;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.14 no.1
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    • pp.33-37
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    • 2004
  • Cu$_{0.1}$Fe$_{0.9}$Cr$_2$S$_4$ has been studied with Mossbauer spectroscopy, x-ray diffraction, vibrating sample magnetometer (VSM), and magnetoresistance (MR) measurement. The crystal structure was determined to be a cubic spinel with lattice parameter a$_{0}$=9.9880 $\AA$. The MR measurements show a semiconductor behavior below 110 K and metal behaved above 100 K. The temperature dependence of magnetization of Cu$_{0.1}$Fe$_{0.9}$Cr$_2$S$_4$ was reported. In addition to a large irreversibility between the zero-field-cooling (ZFC) and the field-cooling (FC) magnetization at applied field H=100 Oe, a cusp-like anomaly was observed in both the FC and ZFC curves. It shifted toward the lower temperature region with increasing magnetic field, and then showed convex type maximum at 110 K, under the applied field of 5 kOe. The Mossbauer spectra were measured from 15 K to room temperature. The asymmetric line broadening was observed for the sample Cu$_{0.1}$Fe$_{0.9}$Cr$_2$S$_4$, and it was considered to be dynamic Jahn-Teller relaxation. The charge state of Fe ions was ferrous in character. The unusual reduction of magnetic hyperfine field below 110 K was interpreted in terms of cancellation effect between the mutually opposite orbital current field (H$_{L}$) and Fermi contact field (H$_{C}$).

Study on Fiber Laser Annealing of p-a-Si:H Deposition Layer for the Fabrication of Interdigitated Back Contact Solar Cells (IBC형 태양전지 제작을 위한 p-a-Si:H 증착층의 파이버 레이저 가공에 관한 연구)

  • Kim, Sung-Chul;Lee, Young-Seok;Han, Kyu-Min;Moon, In-Yong;Kwon, Tae-Young;Kyung, Do-Hyun;Kim, Young-Kuk;Heo, Jong-Kyu;Yoon, Ki-Chan;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.430-430
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    • 2008
  • Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

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An Experimental Approach to Evaluate the Desulfurization Yield in Spray Drying Sorber (반건식 세정기의 산성가스 제거성능에 관한 실험적 연구)

  • Yang, Hyun-Mo;Kim, Sang-Soo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.24 no.4
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    • pp.589-598
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    • 2000
  • A pilot-scale Spray Drying Sorber (SDS) system was set up to evaluate the effect of spray characteristics on the desulfurization yield. The size distribution and the Sauter Mean Diameters of slurry droplets were measured in advance using the optical size measurement system, Malvern 2600. The desulfurization yield of the drying chamber by size was measured for the conditions of inlet gas and spray injection. As a reagent, 10% limestone slurry of $Ca(OH)_2$ was treated with flue gas containing $SO_2$, and the combustion gas analyzer and gas detectors were attached to measure the $SO_2$ concentration. With a flow rate of 144 Nm3/h and a temperature range of $200{\sim}300^{\circ}C$, the experiments were performed for the Stoichiometric Ratio (SR) of 1.0 to 3.0 and droplet mean diameter of 6.5 to $34.3{\mu}m$. In case of smaller spray droplets, the desulfurization efficiency improved due to the increase of total droplet surface area, while the reduction in evaporation time reduced the contact time between the droplets and $SO_2$ gas. In some typical region of droplet diameter, this negative effect, reduction of contact time, became dominant and the desulfurization yield decreases the desulfurization yield in spite of the expansion in absorption area. These results revealed that there exists the optimal size of spray droplets for a given state, which is determined by the compromise between the total surface area of slurry droplets and the evaporation time of droplets. The measurements also indicated that the inlet temperature of flue gas changes the optimal injection condition by varying the driving force for evaporation. The results confirm that the effect of the evaporation time of slurry droplets should be considered in analyzing the desulfurization yield as well as the total surface area, for it is a significant aspect of the correlation with the capabilities of $SO_2$ absorption in wet droplets. In conclusion, the optimal condition of spray can be determined based on these results, which might be applied to design or scale-up of SDS system.

Characteristics of a-Si:H Multilayer for Contact-type Linear Image Sensor (밀착형 1차원 영상감지소자를 위한 a-Si:H 다층막의 특성)

  • Oh, Sang-Kwang;Kim, Ki-Wan;Choi, Kyu-Man
    • Journal of Sensor Science and Technology
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    • v.1 no.1
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    • pp.5-12
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    • 1992
  • We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

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