• Title/Summary/Keyword: Contact Printing

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Investigation of the Ni/Cu metal grid space for high-effiency, low cost crystlline silicon solar cells (고효율, 저가화 태양전지에 적합한 Ni/Cu 금속 전극 간격에 따른 특성 평가)

  • Kim, Min-Jeong;Lee, Ji-Hun;Cho, Kyeng-Yeon;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
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    • 2009.04a
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    • pp.225-229
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    • 2009
  • The front metal contact is one of the most important element influences in efficiency in the silicon solar cell. First of all selective of the material and formation method is important in metal contacts. Commercial solar cells with screen-printed contacts formed by using Ag paste process is simple relatively and mass production is easy. But it suffer from a low fill factor and a high shading loss because of high contact resistance. Besides Ag paste too expensive. because of depends income. This paper applied for Ni/Cu metallization replace for paste of screen printing front metal contact. Low cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the screen-printed Ag contacts. Ni has been proposed as a suitable silicide for the salicidation process and is expected to replace conventional silicides. Copper is a promising material for the electrical contacts in solar cells in terms of conductivity and cost. In experiments Ni/Cu metal contact applied same grid formation of screen-printed solar cell. And it has variation of different grid spacing. It was verified that the wide spacing of grid finger could increase the series resistance also the narrow spacing of grid finger also implies a grid with a higher density of grid fingers. Through different grid spacing found alteration of efficiency.

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Formation of Ni-W-P/Cu Electrodes for Silicon Solar Cells by Electroless Deposition (무전해 도금을 이용한 Si 태양전지 Ni-W-P/Cu 전극 형성)

  • Kim, Eun Ju;Kim, Kwang-Ho;Lee, Duk Haeng;Jung, Woon Suk;Lim, Jae-Hong
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.54-61
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    • 2016
  • Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

Advances in Crystalline Silicon Solar Cell Technology

  • Lee, Hae-Seok;Park, Hyomin;Kim, Donghwan;Kang, Yoonmook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.82-82
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    • 2015
  • Industrial crystalline silicon (c-Si) solar cells with using a screen printing technology share the global market over 90% and they will continue to be the same for at least the next decade. It seems that the $2^{nd}$ generation and the $3^{rd}$ generation technologies have not yet demonstrated competitiveness in terms of performance and cost. In 2014, new world record efficiency 25.6% (Area-$143.7cm^2$, Voc-0.740V, $Jsc-41.8mA/cm^2$, FF-0.827) was announced from Panasonic and its cell structure is Back Contact $HIT^*$ c-Si solar cell. Here, amorphous silicon passivated contacts were newly applied to back contact solar cell. On the other hand, 24.9% $TOPCon^{**}$ cell was announced from Fraunhofer ISE and its key technology is an excellent passivation quality applying tunnel oxide (<2 nm) between metal and silicon or emitter and base. As a result, to realize high efficiency, high functional technologies are quite required to overcome a theoretical limitation of c-Si solar cell efficiency. In this presentation, Si solar cell technology summarized in the International Technology Roadmap for Photovoltaics ($^{***}ITRPV$ 2014) is introduced, and the present status of R&D associated with various c-Si solar cell technologies will be reviewed. In addition, national R&D projects of c-Si solar cells to be performed by Korea University are shown briefly.

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Improved Design for Enhanced Grip Stability of the Flexible Gripper in Harvesting Robot (파지 안정성을 강화한 과수 수확용 로봇 그리퍼의 설계 개선)

  • Choi, Du Soon;Moon, Sun Young;Hwang, Myun Joong
    • The Journal of Korea Robotics Society
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    • v.15 no.2
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    • pp.107-114
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    • 2020
  • In robotic harvesting, a gripper to manipulate the fruits needs to be attached to the robot system. We proposed a flexible robot gripper that can actively respond to the shape of an object such as fruits in the previous work. However, we found that there is a possibility of not being reliably gripped when the object slides during contact with a finger. In this paper, the improved gripper design is proposed to fundamentally solve the problems of the previous gripper. The position of the finger and the maximum closed position are changed, and the design improvement is performed to increase the grip stability by changing the installation angle of the link portion of the finger. Based on the improved design, a modified gripper is fabricated by 3-D printing, and then gripping experiments are performed on spherical object and fruit model object. It is shown that the gripper can stably grip the objects without excessive bending of the finger link of the gripper. The contact pressure between the finger and the surface of the object is measured, and it is verified that it is a sufficiently small pressure that does not cause damage to the fruit. Therefore, the proposed gripper is expected to be successfully applied in harvesting.

A Study of Surface Modification of TiO2 Semiconductor Electrode by Various Overlayers Coating in Dye Sensitized Solar Cells(DSSC) (염료감응형 태양전지에서 $TiO_2$ 반도체전극 표면의 다양한 overlayer 코팅에 따른 특성연구)

  • Kim, Jun-Tak;Kim, Sang-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.100-100
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    • 2009
  • $TiO_2$ is widely being used as a semiconductor electrode for DSSC. Anti-recombination property and surface area of $TiO_2$ give an important influence to the DSSC efficiency. In this study, $TiO_2$ electrode was fabricated on FTO using screen printing method. Various overlayers were coated on them by dip coating in solution of saturated $Ba(NO_3)_2$, $Mg(NO_3)_2$ and $N_{2}O_{6}Sr$. They reduced the recombination of electrons from photo excited state of Ru dye. The atmospheric plasma treatment was applied to both the $TiO_2$ and each overlayer coated $TiO_2$ surfaces to improve contact ability with dye. We prepared four samples, one sample has bare $TiO_2$ surfaces to improve contact ability with dye. We prepared four samples, one sample has bare $TiO_2$ electrode and the other samples consist of each overlayer coated $TiO_2$ electrodes. We used XRD, FE-SEM, J-V, IPCE and EIS in order to investigate characteristic.

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Development of High-Quality Poly(3,4-ethylenedioxythiophene) Electrode Pattern Array Using SC1 Cleaning Process (SC1 세척공정을 이용한 고품질 Poly(3,4-ethylenedioxythiophene) 전극 패턴 어레이의 개발)

  • Choi, Sangil;Kim, Wondae;Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.4 no.4
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    • pp.311-314
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    • 2011
  • Application of self-assembled monolayers (SAMs) to the fabrication of organic thin film transistor has been recently reported very often since it can help to provide ohmic contact between films as well as to form simple and effective electrode pattern. Accordingly, quality of these ultra-thin films is becoming more imperative. In this study, in order to manufacture a high quality SAM pattern, a hydrophobic alkylsilane monolayer and a hydrophilic aminosilane monolayer were selectively coated on $SiO_2$ surface through the consecutive procedures of a micro-contact printing (${\mu}CP$) and dip-coating methods under extremely dry condition. On a SAM pattern cleaned with SC1 solution immediately after ${\mu}CP$, poly(3,4-ethylenedioxythiophene) (PEDOT) source and drain electrode array were very selectively and nicely vapour phase polymerized. On the other side, on a SC1-untreated SAM pattern, PEDOT array was very poorly polymerized. It strongly suggests that the SC1 cleaning process effectively removes unwanted contaminants on SAM pattern, thereby resulting in very selective growth of PEDOT electrode pattern.

Sintering and Consolidation of Silver Nanoparticles Printed on Polyimide Substrate Films

  • Yoon, Sang-Hwa;Lee, Jun-Ho;Lee, Pyoung-Chan;Nam, Jae-Do;Jung, Hyun-Chul;Oh, Yong-Soo;Kim, Tae-Sung;Lee, Young-Kwan
    • Macromolecular Research
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    • v.17 no.8
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    • pp.568-574
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    • 2009
  • We investigated the sintering and consolidation phenomena of silver nanoparticles under various thermal treatment conditions when they were patterned by a contact printing technique on polyimide substrate films. The sintering of metastable silver nanoparticles commenced at 180 $^{\circ}C$, where the point necks were formed at the contact points of the nanoparticles to reduce the overall surface area and the overall surface energy. As the temperature was increased up to 250 $^{\circ}C$, silver atoms diffused from the grain boundaries at the intersections and continued to deposit on the interior surface of the pores, thereby filling up the remaining space. When the consolidation temperature exceeded 270 $^{\circ}C$, the capillary force between the spherical silver particles and polyimide flat surface induced the permanent deformation of the polyimide films, leaving crater-shaped indentation marks. The bonding force between the patterned silver metal and polyimide substrate was greatly increased by the heat treatment temperature and the mechanical interlocking by the metal particle indentation.

Implementation of User Interface for DNA Micro Array Printing Technology (DNA 마이크로어레이 프린팅을 위한 사용자 인터페이스 적용기술)

  • Park, Jae-Sam
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.12
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    • pp.1875-1882
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    • 2013
  • Micro-array technology contributes numerous achievements such as ordering of gene network and integration of genomic. This technology is well established as means for investigating patterns of gene expression. DNA micro-arrays utilize Affymetric chips where a large quantity of DNA sequences may be synthesized. There are two general type of conventional DNA array spotter: contact and piezoelectric. The contact technology used spotting pin technology to make contact with the glass slide surface. This may caused damage or scratches to the surface matrix where protein will be contaminated and may not bind specifically. Piezoelectric technology available at this present time on the other hand requires the analyzer to print the result that can only be done within the laboratory despite of mass production. Therefore, in this paper, high-throughput technology is developed for providing greater consistency in feature spot without touching the glass slide surface.

Development of the Large-area Au/Pd Transfer-printing Process Applying Both the Anti-Adhesion and Adhesion Layers (접착방지막과 접착막을 동시에 적용한 대면적 Au/Pd 트랜스퍼 프린팅 공정 개발)

  • Cha, Nam-Goo
    • Korean Journal of Materials Research
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    • v.19 no.8
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    • pp.437-442
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    • 2009
  • This paper describes an improved strategy for controlling the adhesion force using both the antiadhesion and adhesion layers for a successful large-area transfer process. An MPTMS (3-mercaptopropyltrimethoxysilane) monolayer as an adhesion layer for Au/Pd thin films was deposited on Si substrates by vapor self assembly monolayer (VSAM) method. Contact angle, surface energy, film thickness, friction force, and roughness were considered for finding the optimized conditions. The sputtered Au/Pd ($\sim$17 nm) layer on the PDMS stamp without the anti-adhesion layer showed poor transfer results due to the high adhesion between sputtered Au/Pd and PDMS. In order to reduce the adhesion between Au/Pd and PDMS, an anti-adhesion monolayer was coated on the PDMS stamp using FOTS (perfluorooctyltrichlorosilane) after $O_2$ plasma treatment. The transfer process with the anti-adhesion layer gave good transfer results over a large area (20 mm $\times$ 20 mm) without pattern loss or distortion. To investigate the applied pressure effect, the PDMS stamp was sandwiched after 90$^{\circ}$ rotation on the MPTMS-coated patterned Si substrate with 1-${\mu}m$ depth. The sputtered Au/Pd was transferred onto the contact area, making square metal patterns on the top of the patterned Si structures. Applying low pressure helped to remove voids and to make conformal contact; however, high pressure yielded irregular transfer results due to PDMS stamp deformation. One of key parameters to success of this transfer process is the controllability of the adhesion force between the stamp and the target substrate. This technique offers high reliability during the transfer process, which suggests a potential building method for future functional structures.

Electroless plating of buried contact solar cell (전극함몰형 태양전지의 무전해도금)

  • Dong Seop Kim;Eun Chel Cho;Soo Hong Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.1
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    • pp.88-97
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    • 1996
  • The metallization is the key to determining cell costs, cell performance, and system reliability. Screen printing technology suffers from several limitations affecting mainly the front grid. The buried contact solar cell (BCSC) was specifically desinged to be compatible with low cost, mass production techniques and avoid the conventional metallization problem. By using electroless plating technique, we performed this metallization inexpensively and reliably. This paper presents the details of the optimization procedure of metallization schemes on laser grooved cell surfaces. Commercially available Ni, Cu and Ag plating solutions were applied for the cell metallization. The application of those solutions on the buried contact front metallization has resulted in an cell efficiency of 18.8%. The cell parameters are an open circuit voltage of 651 mV, short circuit current density of 37.1 mA/$\textrm{cm}^2$, and fill factor of 77.8 %. The efficiency of over 18 % was achieved in the above 90% of the batch.

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