• ETRI Journal
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• v.41 no.6
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• pp.820-828
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• 2019

A highly reliable conductive adhesive obtained by transient liquid-phase sintering (TLPS) technologies is studied for use in high-power device packaging. TLPS involves the low-temperature reaction of a low-melting metal or alloy with a high-melting metal or alloy to form a reacted metal matrix. For a TLPS material (consisting of Ag-coated Cu, a Sn96.5-Ag3.0-Cu0.5 solder, and a volatile fluxing resin) used herein, the melting temperature of the metal matrix exceeds the bonding temperature. After bonding of the TLPS material, a unique melting peak of TLPS is observed at 356 ℃, consistent with the transient behavior of Ag₃Sn + Cu₆Sn₅ → liquid + Cu₃Sn reported by the National Institute of Standards and Technology. The TLPS material shows superior thermal conductivity as compared with other commercially available Ag pastes under the same specimen preparation conditions. In conclusion, the TLPS material can be a promising candidate for a highly reliable conductive adhesive in power device packaging because remelting of the SAC305 solder, which is widely used in conventional power modules, is not observed.

• Journal of Powder Materials
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• v.9 no.6
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• pp.409-415
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• 2002

In this review the methods for production and processing of isolated or agglomerated nanoscale metal particles embedded in organic liquids (nanosuspensions) and polymer matrix composites are elucidated. Emphasis is laid on the techniques of inert gas condensation (IGC) and high pressure sputtering for obtaining highly porous metal powders ("nanopowder") as well as on vacuum evaporation on running liquids for obtaining nanosuspensions. Functional properties and post-processing are outlined in view of applications in the fields of electrically conductive adhesives and anti-microbially active materials for medical articles and consumer goods.mer goods.

• 전기의세계
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• v.25 no.2
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• pp.87-91
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• 1976

Experimentally to investigate the conductive characteristic of oil-immersed paper, we observed the leakage current-voltage characteristic of oil-immersed paper, the temperature dependence of ionization rate and the effect of metal electrode on the leakage current. The results showed that the leakage current-voltage characteristic generally followed the experimental equation i=i$_{0}$ exp (K.root.E) and the slope K did not change by the temperature and electric strength, but only when the direct voltage was applied. And also the leakage current seemed to depend on the work function of metal electrode. From the above results we concluded that the deterioration of oil-immersed paper was not only caused by the thermionic emission from the cathode but also by the conductive property of oil-immersed paper in itself and the work function of metal electrode.e.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.12.1-12.1
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• 2009

For the micro conductive line, memory device fabrication process use many expensive processes such as manufactur-ing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because nano-metal particles contained inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as FPCB, PCB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line on flexible PCB substrate for the next generation electronic circuit using Ag nano-particles contained ink. To improve the line tolerance on flexible PCB, metal lines are fabricated by sequential prinitng method. Sequential printing method has vari-ous merits about fine, thick and high resolution pattern lines without bulge.

• Advances in nano research
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• v.3 no.1
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• pp.49-54
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• 2015

The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.314-314
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• 2013

Recently, flexibility is one of the hottest issues in the field of electronic devices. For flexible displays or solar cells, a development of transparent conductive electrodes (TCEs) with flexibility, bendability and foldability is an essential element. Hundreds of nanometers indium-tin-oxide (ITO) films have been widely used and commercialized as a transparent electrode, but their brittleness make them difficulty to apply flexible electronics. Many researchers have been studying for flexible TCEs such as a few layers of graphene sheets, carbon nanotube networks, conductive polymer films and combinations among them. Although gained flexibility, their transmittance and resistivity have not reached those of commercialized ITO films. Metal grids electrode cannot act as TCEs only, but they can be used to lower the resistance of TCEs with few losses of transmittance. However, the possibility of device shortage will be rise at the devices with metal grids because a surface flatness of TCEs may be deteriorated when metal grids are introduced using conventional methods. In our research, we have developed hybrid TCEs, which combined tens of nanometers ITO film and metal grids which are embedded in flexible substrate. They show $13{\Omega}$/${\Box}f$ sheet resistance with 94% of transmittance. Moreover, the sheet resistance was maintained up to 1 mm of bending radius. Also, we have verified that flexible organic light emitting diodes and organic solar cells with the TCEs showed similar performances compared to commercial ITO (on glass substrate) devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.862-867
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• 2016

In this study, the embroidery textile conductive wire of conductive yarn was designed into the wearable integrated clothing for sensing the infant's body temperature. To develop a high quality of the stable fiber-based textile conductive wire, firstly the five types of conductive yarns were twisted or covering polyester yarns and the coated conductive fiber with silver(Ag) or iron(Fe). As a result of comparative conductivity in conductive yarns of yarn processing, the 250 denier of conductive yarns with $0.74{\Omega}$/1~5cm were proposed and used for the integrated embroidery textile conductive wire for sensing. During experiments using the proposed embroidery textile conductive wire, measured resistance of thermistor according to the body temperature was correctly delivered to amplifier module, and showed feasible reliability of temperature sensing. As a wearable application, conductive yarns which takes forms of embroidery textile conductive wire would seems to be reliable as a conductive wire and could be replaced by the conductive metal wires.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.1
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• pp.126-131
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• 2008

In this investigation, various factors affecting manufacturing conductive inks are presented, examined and discussed. The discussion includes inherent difficulties in making conductive inks successful and at the same time offers ways in which these difficulties might be overcome. One of the solutions to overcome such difficulties is to use low melting metals and alloys. This aspect is also detailed.

• Journal of the Korean Chemical Society
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• v.51 no.2
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• pp.171-177
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• 2007

Polymer-based electrically conductive pastes have been used to make the conductive paths between voltage sources and devices. The pastes used for these applications consist of two main components: a polymer binder and a conductive filler. Having both low viscosity and good metal-encapsulating properties, cellulose acetate butyrate (CAB) was regarded to be a good candidate as a binder for the conductive paste. We have prepared a formulation for a novel conductive paste based on CAB. Preliminary studies showed that this conductive paste revealed stable conductivity, together with uniform coating and flexibility.