• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.346-351
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• 2012

$Li_{1+x}Al_xTi_{2-x}(PO_4)_3$(LATP) is a promising solid electrolyte for all-solid-state Li ion batteries. In this study, LATP is prepared through a sol-gel method using relatively the inexpensive reagents $TiCl_4$. The thermal behavior, structural characteristics, fractured surface morphology, ion conductivity, and activation energy of the LATP sintered bodies are investigated by TG-DTA, X-ray diffraction, FE-SEM, and by an impedance method. A gelation powder was calcined at $500^{\circ}C$. A single crystalline phase of the $LiTi_2(PO_4)_3$(LTP) system was obtained at a calcination temperature above $650^{\circ}C$. The obtained powder was pelletized and sintered at $900^{\circ}C$ and $1000^{\circ}C$. The LTP sintered at $900{\sim}1000^{\circ}C$ for 6 h had a relatively low apparent density of 75~80%. The LATP(x = 0.3) pellet sintered at $900^{\circ}C$ for 6 h was denser than those sintered under other conditions and showed the highest ion conductivity of $4.50{\times}10^{-5}$ S/cm at room temperature. However, the ion conductivity of LATP (x = 0.3) sintered at $1000^{\circ}C$ decreased to $1.81{\times}10^{-5}$ S/cm, leading to Li volatilization and abnormal grain growth. For LATP sintered at $900^{\circ}C$ for 6 h, x = 0.3 shows the lowest activation energy of 0.42 eV in the temperature range of room temperature to $300^{\circ}C$.

• Journal of Surface Science and Engineering
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• v.57 no.4
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• pp.317-324
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• 2024

We demonstrate a direct growth of carbon nanotubes (CNTs) on the surface of LiFePO₄ (LFP) powders for use in lithium-ion batteries (LIB). LFP has been widely used as a cathode material due to its low cost and high stability. However, there is a still enough room for development to overcome its low energy density and electrical conductivity. In this study, we fabricated novel structured composites of LFP and CNTs (LFP-CNTs) and characterized the electrochemical properties of LIB. The composites were prepared by direct growth of CNTs on the surface of LFP using a rotary chemical vapor deposition. The growth temperature and rotation speed of the chamber were optimized at 600 ℃ and 5 rpm, respectively. For the LIB cell fabrication, a half-cell was fabricated using polytetrafluoroethylene (PTFE) and carbon black as binder and conductive additives, respectively. The electrochemical properties of LIBs using commercial carbon-coated LFP (LFP/C), LFP with CNTs grown for 10 (LFP/CNTs-10m) and 30 min(LFP/CNTs-30m) are comparatively investigated. For example, after the formation cycle, we obtained 149.3, 160.1, and 175.0 mAh/g for LFP/C, LFP/CNTs-10m, and LFP/CNTs-30m, respectively. In addition, the improved rate performance and 111.9 mAh/g capacity at 2C rate were achieved from the LFP/CNTs-30m sample compared to the LFP/CNTs-10m and LFP/C samples. We believe that the approach using direct growth of CNTs on LFP particles provides straightforward solution to improve the conductivity in the LFP-based electrode by constructing conduction pathways.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korean Society of Groundwater Environment
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• v.5 no.2
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• pp.88-100
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• 1998

Since fractures may serve as major conduits of groundwater flow in crystalline rocks, characterization of conductive fractures is especially important for interpretation of flow system. In this study, characterization of fractures to investigate hydraulically conductive fractures in gneisses at an abandoned mine area was performed. The orientation, width, length, movement sense, infilling materials, spacing, aperture, roughness of both joints and faults and intersection and connectivity to other joints were measured on outcrops. In addition, characteristics of subsurface fractures were examined by core logging in five boreholes, of which the orientations were acquired by acoustic televiewer logging from three boreholes. The dominant fracture sets were grouped from outcrops; GSet 1: N50-82$^{\circ}$E/55-90$^{\circ}$SE, GSet 2: N2-8$^{\circ}$E/56-86$^{\circ}$SE, GSet 3: N46-72$^{\circ}$W/60-85$^{\circ}$NE, GSet 4:Nl2-38$^{\circ}$W/15-40$^{\circ}$SW and from subsurface; HSet 1: N50-90$^{\circ}$E/55-90$^{\circ}$SE, HSet 2: N10-30$^{\circ}$E/50-70$^{\circ}$SE, HSet 3: N20-60$^{\circ}$W/50-80$^{\circ}$NE, HSet 4: N10-50$^{\circ}$E/$\leq$40$^{\circ}$NW. Among them, GSet 1, GSet 3 and HSet 1, HSet 3 are the most intensely developed fracture sets in the study area. The mean fracture spacings of HSet 1 are 30-47cm and code 1 fractures, such as faults and open fractures, comprise 21.0-42.9 percent of the whole fractures in each borehole. HSet 3 shows the mean fracture spacings of 55-57cm and the ratio of code 1 fractures is 15.4-26.9 percent. In spite of the mean fracture spacing of 239cm, code 1 fractures of HSet 4 have the highest ratio of 54.5 percent. From the fact that faults or open fractures have high hydraulic conductivity, it can be inferred that the three fracture sets of N55-85$^{\circ}$E/50-80$^{\circ}$SE, N20-60$^{\circ}$W/50-75$^{\circ}$NE and N10-30$^{\circ}$E/$\leq$30$^{\circ}$NW from a fracture system of relatively high conductivity. It is indirectly verified with geophysical loggings and constant injection tests performed in the boreholes.

• Applied Chemistry for Engineering
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• v.29 no.3
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• pp.336-341
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• 2018

In general, the synthesis of poly(3-hexylthiophene)(P3HT)-based block copolymers requires at least a 4-5 step process. To control the molecular weight, molecular weight distribution, and block ratio, the reaction conversion and time should be monitored. In addition, the reaction scale usually limited to several mg to g was difficult to increase due to the limitations of living radical polymerizations. In this study, we synthesized P3HT-b-poly(4-vinylprydine) (P3HT-b-P4VP) with a final product quantity of > 19 g via a 2-step synthetic method with an anionic polymerization. In this method, the molecular weight and molecular weight distribution of P3HT-b-P4VP can be well controlled without monitoring the reaction conversion. We also studied physical properties of P3HT-b-P4VP depending on different solvent systems, which were investigated by UV-vis spectroscopy, atomic force microscopy, and ultraviolet photoelectron spectroscopy.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.05a
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• pp.23-28
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• 2002

This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

• Applied Chemistry for Engineering
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• v.23 no.4
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• pp.372-376
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• 2012

Carbon nanotubes (CNT) are considered as one of ideal nano-fillers in the field of composites with their excellent electrical, mechanical, and thermal properties. Therefore CNT composites are increasingly used in fabricating conductive materials, structural materials with high strength and low weight, and multifunctional materials. The main problem of the CNT composites is difficulty in the dispersion of CNT in the polymer matrix. In this study multi-walled carbon nanotubes (MWNT) were pretreated by the physical process utilizing a wrapping method. After the pretreatment polymer/MWNT nanocomposites were prepared by melt processing. The effect of functionalization MWNT by wrapping with styrene acrylonitrile (SAN) on the mechanical and electrical properties of acrylonitrile butadiene styrene resin (ABS)/MWNT composites was studied by comparing the properties of ABS mixed with the neat MWNT. Electrical and mechanical properties of ABS/MWNT nanocomposites were studied as a function of the functionalization and content of MWNT. The tensile strength of the ABS/MWNT nanocomposites increased, but the impact strength decreased. The polymer wrapping in ABS system has little effect on the improvement of electrical properties.

• Journal of the Korean Solar Energy Society
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• v.39 no.4
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• pp.1-9
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• 2019

Modules using 6 inch cells have problems with loss due to empty space between cells. To solve this problem made by shingled structure which can generate more power by utilizing empty space by increasing the voltage level than modules made in 6inch cell. Thus, in this paper, the c-Si cutting cells were produced using nanosecond green laser, and then the ECA was sprayed and cured to perform cutting cell bonding. Three types of ECA materials (B1, B2, B3) with Ag as the main component were used, and experimental conditions varied from 5 to 120 seconds of curing time, 130 to $210^{\circ}C$ of curing temperature, and 1 to 3 of curing numbers. As a results of experiments varying curing time, B1 showed efficiency 19.88% in condition of 60 seconds, B2 showed efficiency 20.15% in 90 seconds, and B3 showed efficiency 20.27% in 60 seconds. In addition, experiments with varying curing temperature, It was confirmed highest efficiency that 20.04% in condition of $170^{\circ}C$ with B1, 20.15% in condition of $150^{\circ}C$ with B2, 20.27% in condition of $150^{\circ}C$ with B3. These are because the Ag particles are densely formed on the surface to make the conduction path. After optimizing the conditions of temperature and curing time, the secondary-tertiary curing experiments were carried out. as the structural analysis, conditions of secondary-tertiary curing showed cracks that due to damp heat aging. As a result, it was found that the ECA B3 had the highest efficiency of 20.27% in condition of 60 seconds of curing time, $150^{\circ}C$ of curing temperature, and single number of curing, and that it was suitable for the manufacture of Solar cell of shingled structure rather than ECA B1 and B2 materials.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.