• Title/Summary/Keyword: Conductive 3D Printing

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Tape-Type Liquid Leakage Film Sensor (액체누설 감지용 테이프형 필름센서)

  • Yu, D.K.;Kim, K.S.;Yub, H.K.;Han, G.H.;Jin, D.J.;Kim, J.H.;Han, S.H.;Cho, G.S.
    • Journal of the Korean Vacuum Society
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    • v.20 no.2
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    • pp.146-154
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    • 2011
  • The adhesive-tape of a liquid leak film sensor including the alarm system is developed. The sensing film is composed of three layers such as base film layer, conductive line layer, and protection film layer. The thickness of film is 300~500 um, the width is 3.55 cm, and the unit length is 200 m. On the conductive line layer, three conducting lines and one resistive line are formulated by the electronic printing method with a conducting ink of silver-nano size. When a liquid leaks for the electricity to be conducted between the conductive line and the resistive line, the position of leakage is monitored by measuring the voltage varied according to the change of resistance between two lines. The error range of sensing position of 200 m film sensor is ${\pm}1m$.

Electrical Characteristics of Copper Circuit using Inkjet Printing (잉크젯 프린팅 방식으로 형성된 구리 배선의 전기적 특성 평가)

  • Kim, Kwang-Seok;Koo, Ja-Myeong;Joung, Jae-Woo;Kim, Byung-Sung;Jung, Seung-Boo
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.43-49
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    • 2010
  • Direct printing technology is an attractive metallization method, which has become immerging as "Green technology" to the conventional photolithography, on account of low cost, simple process and environment-friendliness. In order to commercialize the printed electronics in industry, it is essential to evaluate the electrical properties of conductive circuits using direct printing technology. In this contribution, we focused on the electrical characteristics of inkjet-printed circuits. A Cu nanoink was inkjet-printed onto a Bisaleimide triazine(BT) substrate with parallel transmission line(PTL) and coplanar waveguide(CPW) type, then was sintered at $250^{\circ}C$ for 30 min. We calculated the resistivity of printed circuits through direct current resistance by the measurement of I-V curve: the resistivity was approximately 0.558 ${\mu}{\Omega}{\cdot}cm$ which is about 3.3 times that of bulk Cu. Cascade's probe system in the frequency range from 0 to 30 GHz were employed to measure the Scattering parameter(S-parameter) with or without a gap between the substrate and the probe station chuck. The result of measured S-parameter showed that all printed circuits had over 5 dB of return loss in the entire frequency range. In the curve of insertion loss, $S_{21}$, showed that the PTL type circuits had better transmission of radio frequency (RF) than CPW type.

CPW-fed UWB Monopole Paper Antenna (CPW 급전 UWB 모노폴 종이 안테나)

  • Park, Dong-Kook
    • Journal of IKEEE
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    • v.25 no.4
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    • pp.607-612
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    • 2021
  • This paper presents a novel CPW-fed UWB monopole paper antenna made by paper and copper tape. Through the simulation, the optimized antenna design parameters were obtained, and an antenna having an omni-directional radiation pattern and a gain of 2.2 dBi or more in the UWB frequency band of 3.1-10.6 GHz was designed. The antenna was manufactured using general A4 paper and copper tape, and the measurement result satisfies the return loss of -10dB or less in the UWB frequency band and confirm that the return loss characteristic was maintained even when the antenna plane was bent by 3 mm in the longitudinal direction. The proposed antenna is a wearable device that can provide services in the UWB band, and can be manufactured inexpensively by printing it with a conductive print on paper. So it can be used as a wearable antenna for UWB communication in various application fields such as logistics and disposable terminals.

Dispersion Characteristics of Ag Pastes and Properties of Screen-printed Source-drain Electrodes for OTFTs (Ag Pastes의 분산 특성 및 스크린 인쇄된 OTFTs용 전극 물성)

  • Lee, Mi-Young;Nam, Su-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.835-843
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    • 2008
  • We have fabricated the source-drain electrodes for OTFTs by screen printing method and manufactured Ag pastes as conductive paste. To obtain excellent conductivity and screen-printability of Ag pastes, the dispersion characteristics of Ag pastes prepared from two types of acryl resins with different molecular structures and Ag powder treated with caprylic acid, triethanol amine and dodecane thiol as surfactant respectively were investigated. The Ag pastes containing Ag powder treated with dodecane thiol having thiol as anchor group or AA4123 with carboxyl group(COOH) of hydrophilic group as binder resin exhibited excellent dispersity. But, Ag pastes(CA-41, TA-41, DT-41) prepared from AA4123 fabricated the insulating layer since the strong interaction between surface of Ag powder and carboxyl group(COOH) of AA4123 interfered with the formation of conduction path among Ag powders. The viscosity behavior of Ag pastes exhibited shear-thinning flow in the high shear rate range and the pastes with bad dispersion characteristic demonstrated higher shear-thinning index than those with good dispersity due to the weak flocculated network structure. The output curve of OTFT device with a channel length of 107 ${\mu}m$ using screen-printed S-D electrodes from DT-30 showed good saturation behavior and no significant contact resistance. And this device exhibited a saturation mobility of $4.0{\times}10^{-3}$ $cm^2/Vs$, on/off current ratio of about $10^5$ and a threshold voltage of about 0.7 V.

A Printing Process for Source/Drain Electrodes of OTFT Array by using Surface Energy Difference of PVP (Poly 4-vinylphenol) Gate Dielectric (PVP(Poly 4-vinylphenol) 게이트 유전체의 표면에너지 차이를 이용한 유기박막트랜지스터 어레이의 소스/드레인 전극 인쇄공정)

  • Choi, Jae-Cheol;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.3
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    • pp.7-11
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    • 2011
  • In this paper, we proposed a simple and high-yield printing process for source and drain electrodes of organic thin film transistor (OTFT). The surface energy of PVP (poly 4-vinylphenol) gate dielectric was decreased from 56 $mJ/m^2$ to 45 $mJ/m^2$ by adding fluoride of 3000ppm into it. Meanwhile the surface energy of source and drain (S/D) electrodes area on the PVP was increased to 87 $mJ/m^2$ by treating the areas, which was patterned by photolithography, with oxygen plasma, maximizing the surface energy difference from the other areas. A conductive polymer, G-PEDOT:PSS, was deposited on the S/D electrode areas by brushing painting process. With such a simple process we could obtain a high yield of above 90 % in $16{\times}16$ arrays of OTFTs. The performance of OTFTs with the fluoride-added PVP was similar to that of OTFTs with the ordinary PVP without fluoride, generating the mobility of 0.1 $cm^2/V.sec$, which was sufficient enough to drive electrophoretic display (EPD) sheet. The EPD panel employing the OTFT-backpane successfully demonstrated to display some patterns on it.

Heat Dissipation Trends in Semiconductors and Electronic Packaging (반도체 및 전자패키지의 방열기술 동향)

  • S.H. Moon;K.S. Choi;Y.S. Eom;H.G. Yun;J.H. Joo;G.M. Choi;J.H. Shin
    • Electronics and Telecommunications Trends
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    • v.38 no.6
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    • pp.41-51
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    • 2023
  • Heat dissipation technology for semiconductors and electronic packaging has a substantial impact on performance and lifespan, but efficient heat dissipation is currently facing limited improvement. Owing to the high integration density in electronic packaging, heat dissipation components must become thinner and increase their performance. Therefore, heat dissipation materials are being devised considering conductive heat transfer, carbon-based directional thermal conductivity improvements, functional heat dissipation composite materials with added fillers, and liquid-metal thermal interface materials. Additionally, in heat dissipation structure design, 3D printing-based complex heat dissipation fins, packages that expand the heat dissipation area, chip embedded structures that minimize contact thermal resistance, differential scanning calorimetry structures, and through-silicon-via technologies and their replacement technologies are being actively developed. Regarding dry cooling using single-phase and phase-change heat transfer, technologies for improving the vapor chamber performance and structural diversification are being investigated along with the miniaturization of heat pipes and high-performance capillary wicks. Meanwhile, in wet cooling with high heat flux, technologies for designing and manufacturing miniaturized flow paths, heat dissipating materials within flow paths, increasing heat dissipation area, and reducing pressure drops are being developed. We also analyze the development of direct cooling and immersion cooling technologies, which are gradually expanding to achieve near-junction cooling.