• 제목/요약/키워드: Conductance method

검색결과 206건 처리시간 0.024초

전압 변환 GIC에 의한 WDF의 설계 방법 및 특성 (Design Method and Characteristics of WDF based on VGIC)

  • 박종연;장목순
    • 전자공학회논문지B
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    • 제30B권9호
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    • pp.45-53
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    • 1993
  • In this paper the voltage controlled GIC is classified into two structures, one has the dependent port conductance and the other has the independent port conductance. Nine kinds of configuration for the WDF with two voltage controlled GICs have been found and the design method for WD-LPF has been shown as an example. Their hardware complexity and amplitude characteristics are nearly same as the existing ones, but amplitude error according to coefficient quantization is reduced to about 5% of the error in existing structures. As the result of the numerical analysis of the RPSD to check up the product quantization effect at the WDF output, four kinds of proposed structures have about 10dB less RPSD than existed ones for 6 bits .leq.B .leq.20 bits.

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MPPT제어 알고리즘 고찰 및 효율시험 평가법 (A Study on the MPPT Control Algorithm and Efficiency Evaluation Method)

  • 유권종;김기현;정영석;김영석
    • 전력전자학회논문지
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    • 제6권2호
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    • pp.164-172
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    • 2001
  • 본 논문에서는 대표적인 MPPT(Maximum Power Point Tracking)제어 알고리즘인 일정전압제어, P&O(Perturbation and Observation)제어, IncCond(Incremental Conductance)제어에 대하여 서술하고, 그 효율성을 검토해 보았다. 이를 위하여 시뮬레이션 및 효율시험을 통하여 정상상태 및 과도상태에 대한 각 알고리즘별 특성 및 효율을 분석하였다. 또한, MPPT 제어의 고효율화를 위하여 기존의 제어 알고리즘을 개선한 Two-Mode 제어법을 제안하였으며, MPPT 효율측정을 위한 회로구성 및 측정 방법을 제시하였다.

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유한요소법에 의한 V구JFET의 해석에 관한 연구 (A study on the analysis of a vertical V-groove junction field effect transistor with finite element method)

  • 성영권;성만영;김일수;박찬원
    • 전기의세계
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    • 제30권10호
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    • pp.645-654
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    • 1981
  • A technique has been proposed for fabricating a submicron channel vertical V-groove JFET using standard photolithography. A finite element numerical simulation of the V-groove JFET operation was performed using a FORTRAN progrma run on a Cyber-174 computer. The numerical simulation predicts pentode like common source output characteristics for the p$^{+}$n Vertical V-groove JFET with maximum transconductance representing approximately 6 precent of the zero bias drain conductance value and markedly high drain conductance at large drain voltages. An increase in the acceptor concentration of the V-groove JFET gate was observed to cause a significant increase in the transconductance of the device. Therefore, as above mentioned, this paper is study on the analysis of a Vertical V-groove Junction Field Effect Transistor with Finite Element Method.d.

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The JFNK method for the PWR's transient simulation considering neutronics, thermal hydraulics and mechanics

  • He, Qingming;Zhang, Yijun;Liu, Zhouyu;Cao, Liangzhi;Wu, Hongchun
    • Nuclear Engineering and Technology
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    • 제52권2호
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    • pp.258-270
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    • 2020
  • A new task of using the Jacobian-Free-Newton-Krylov (JFNK) method for the PWR core transient simulations involving neutronics, thermal hydraulics and mechanics is conducted. For the transient scenario of PWR, normally the Picard iteration of the coupled coarse-mesh nodal equations and parallel channel TH equations is performed to get the transient solution. In order to solve the coupled equations faster and more stable, the Newton Krylov (NK) method based on the explicit matrix was studied. However, the NK method is hard to be extended to the cases with more physics phenomenon coupled, thus the JFNK based iteration scheme is developed for the nodal method and parallel-channel TH method. The local gap conductance is sensitive to the gap width and will influence the temperature distribution in the fuel rod significantly. To further consider the local gap conductance during the transient scenario, a 1D mechanics model is coupled into the JFNK scheme to account for the fuel thermal expansion effect. To improve the efficiency, the physics-based precondition and scaling technique are developed for the JFNK iteration. Numerical tests show good convergence behavior of the iterations and demonstrate the influence of the fuel thermal expansion effect during the rod ejection problems.

A Variable Step Size Incremental Conductance MPPT of a Photovoltaic System Using DC-DC Converter with Direct Control Scheme

  • Cho, Jae-Hoon;Hong, Won-Pyo
    • 조명전기설비학회논문지
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    • 제27권9호
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    • pp.74-82
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    • 2013
  • This paper presents a novel maximum power point tracking for a photovoltaic power (PV) system with a direct control plan. Maximum power point tracking (MPPT) must usually be integrated with photovoltaic (PV) power systems so that the photovoltaic arrays are able to deliver maximum available power. The maximum available power is tracked using specialized algorithms such as Perturb and Observe (P&O) and incremental Conductance (indCond) methods. The proposed method has the direct control of the MPPT algorithm to change the duty cycle of a dc-dc converter. The main difference of the proposed system to existing MPPT systems includes elimination of the proportional-integral control loop and investigation of the effect of simplifying the control circuit. The proposed method thus has not only faster dynamic performance but also high tracking accuracy. Without a conventional controller, this method can control the dc-dc converter. A simulation model and the direct control of MPPT algorithm for the PV power system are developed by Matlab/Simulink, SimPowerSystems and Matlab/Stateflow.

An Improved Variable Step Size MPPT Algorithm Based on INC

  • Xu, Zhi-Rong;Yang, Ping;Zhou, Dong-Bao;Li, Peng;Lei, Jin-Yong;Chen, Yuan-Rui
    • Journal of Power Electronics
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    • 제15권2호
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    • pp.487-496
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    • 2015
  • In order to ensure that photovoltaic (PV) systems work at the maximum power point (MPP) and maximize the economic benefits, maximum power point tracking (MPPT) techniques are normally applied to these systems. One of the most widely applied MPPT methods is the incremental conductance (INC) method. However, the choice of the step size still remains controversial. This paper presents an improved variable step size INC MPPT algorithm that uses four different step sizes. This method has the advantages of INC but with the ability to validly adjust the step size to adapt to changes of the PV's power curve. The presented algorithm also simultaneously achieves increased rapidity and accuracy when compared with the conventional fixed step size INC MPPT algorithm. In addition, the theoretical derivation and specific applications of the proposed algorithm are presented here. This method is validated by simulation and experimental results.

충돌 액막 분석을 위한 전기전도 액막 두께 측정장치 최적설계 (Optimum Design of a Liquid Film Thickness Measurement Device Using Electric Conductance for Impingement Liquid Film)

  • 이형원;이현창;김태성;안규복;윤영빈
    • 센서학회지
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    • 제27권6호
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    • pp.386-391
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    • 2018
  • To analyze the film cooling in a liquid rocket engine, it is necessary to understand the characteristics of the wall-impingement liquid film. We designed an optimal two-dimensional device for measuring the thickness of the liquid film thickness. This device quantitatively measures the liquid-film thickness distribution. In previous liquid-film thickness measuring devices, the liquid film was formed over the entire area of the sensor. However, its formation depended on injection conditions. To compensate for this, optimal resistors are selected. Additionally, saturation variations with partial saturation are analyzed. Furthermore, calibration using the enhanced plate method is conducted with improvements in spatial resolution. The device designed here can be used to analyze the properties of an impingement liquid film with a slit injector. This study can be used for film-cooling analysis in liquid rocket engines.

Experimental Approach to Equalizing the Orifice Method with the Throughput One for the Measurement of TMP Pumping Speed

  • Lim, J.Y.;Kang, S.B.;Shin, J.H.;Koh, D.Y.;Cheung, W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.18-18
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    • 2010
  • Methods of the characteristics evaluation of turbo-molecular pumps (TMP) are well-defined in the international measurement standards such as ISO, PNEUROP, DIN, JIS, and AVS. The Vacuum Center in the Korea Research Institute of Standards and Science has recently designed, constructed, and established the integrated characteristics evaluation system of TMPs based on the international documents by continuously pursuing and acquiring the reliable international credibility through measurement perfection. The measurement of TMP pumping speed is normally performed with the throughput and orifice methods dependent on the mass flow regions. However, in the UHV range of the molecular flow region, the high uncertainties of the gauges, mass flow rates, and conductance are too critical to precisely accumulate reliable data. With UHV gauges of uncertainties less than 15% and a calculated conductance of the orifice, about 35% of pumping speed uncertainties are experimentally derived in the pressure range of less than $10^{-6}$ mbar. In order to solve the uncertainty problems of pumping speeds in the UHV range, we introduced an SRG with 1% accuracy and a constant volume flow meter (CVFM) to measure the finite mass flow rates down to $10^{-3}$ mbar-L/s with 3% uncertainty for the throughput method. In this way we have performed the measurement of pumping speed down to less than $10^{-6}$ mbar with an uncertainty of 6% for a 1000 L/s TMP. In this article we suggest that the CVFM has an ability to measure the conductance of the orifice experimentally with flowing the known mass through the orifice chambers, so that we may overcome the discontinuity problem encountering during introducing two measurement methods in one pumping speed evaluation sequence.

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비휘발성 SNOSEFT EFFPROM 기억소자의 임피던스 효과에 관한 연구 (A Study on the Impedance Effect of Nonvolatile SNOSEFT EFFPROM Memory Devices)

  • 강창수;김동진;김선주;이상배;이성배;서광열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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    • pp.86-89
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    • 1995
  • In this pacer, The effect of the impedances in SNOSEFT s memory devices has been developed. The effect of source and drain impedances are measuring using the method of the field effect bias resistance in the inner resistance regions of the device structure and external bias resistance. The effect of impedance by source and drain resistance shows according to increasing to the storage of memory charges, shows according to a function of decreasing to the gate voltages, shows the delay of threshold voltages, The delay time of low conductance state and high conductance state by the impedance effect shows 3 [${\mu}$sec] and 1[${\mu}$sec] respectively.

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Dual Action of d-Tubocurarine on Large-Conductance $Ca^{2+}-activated$ $K^+$ Channels from Rat Brain Reconstituted into Planar Lipid Bilayer

  • Chung, Sung-Kwon;Shin, Jung-Hoon
    • The Korean Journal of Physiology and Pharmacology
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    • 제2권5호
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    • pp.549-553
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    • 1998
  • Using the planar lipid bilayer method, we investigated the effect of d-tubocurarine (dTC) on the extracellular side of large-conductance $Ca^{2+}-activated\;K^+$ channel from rat brain. When the initial open probability (Po) of the channel was relatively high, dTC decreased channel activity in a concentration dependent manner. In contrast, when the initial Po was lower, sub-micro molar dTC increased channel activity by destabilizing the closed states of the channel. Further addition of dTC up to micro molar range decreased channel activity. This dual effect of dTC implicates that there exist at least two different binding sites for dTC.

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