• Title/Summary/Keyword: Computer Simulation Technology

Search Result 2,705, Processing Time 0.031 seconds

A Mass-Processing Simulation Framework for Resource Management in Dense 5G-IoT Scenarios

  • Wang, Lusheng;Chang, Kun;Wang, Xiumin;Wei, Zhen;Hu, Qingxin;Kai, Caihong
    • KSII Transactions on Internet and Information Systems (TIIS)
    • /
    • v.12 no.9
    • /
    • pp.4122-4143
    • /
    • 2018
  • Because of the increment in network scale and test expenditure, simulators gradually become main tools for research on key problems of wireless networking, such as radio resource management (RRM) techniques. However, existing simulators are generally event-driven, causing unacceptably large simulation time owing to the tremendous number of events handled during a simulation. In this article, a mass-processing framework for RRM simulations is proposed for the scenarios with a massive amount of terminals of Internet of Things accessing 5G communication systems, which divides the time axis into RRM periods and each period into a number of mini-slots. Transmissions within the coverage of each access point are arranged into mini-slots based on the simulated RRM schemes, and mini-slots are almost fully occupied in dense scenarios. Because the sizes of matrices during this process are only decided by the fixed number of mini-slots in a period, the time expended for performance calculation is not affected by the number of terminals or packets. Therefore, by avoiding the event-driven process, the proposal can simulate dense scenarios in a quite limited time. By comparing with a classical event-driven simulator, NS2, we show the significant merits of our proposal on low time and memory costs.

A Study on the Optimal Structural Design and Computer Simulation of Delta Stage for ultra Precision Positioning (초정밀위치결정을 위한 델타스테이지의 최적 설계 및 컴퓨터 시뮬레이션에 관한 연구)

  • 김재열;김영석;송찬일;곽이구;한재호
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2001.04a
    • /
    • pp.221-225
    • /
    • 2001
  • Recently, high accuracy and high precision are required in various industrial fields that are composed of semiconductor manufacturing apparatus and ultra precision positioning apparatus and information system and so on. The positioning technology is a very important one among them. This technology has been rapidly developed, its field needs for positioning accuracy to high as submicron. It is expected that accuracy with 10 nm in precision working and accuracy with 1 nm in ultra precision working are reached at the beginning of 2000s. Recently, to accomplish this positioning technology, many researches are concerned about it and make efforts it. This paper contain design technology of ultra precision 2-axis(X-Y Delta) stage for materialize to positioning accuracy with submicron, where, Delta stage is design as optimum against load and disturbance. And computer simulation is performed for stability and dynamic characteristic of Delta stage.

  • PDF

Simulation of Moire Effect in 3D Displays

  • Saveljev, Vladimir;Kim, Sung-Kyu
    • Journal of the Optical Society of Korea
    • /
    • v.14 no.4
    • /
    • pp.310-315
    • /
    • 2010
  • Theoretical and experimental investigations of moires in 3D displays were performed. To describe and minimize moires, we propose the polar representation form of moire waves. The experimental and theoretical data are in good agreement except in the neighborhood of the minimization angle. The implicit formulas are found for visible moires of line gratings at finite distances. The computer simulation and the physical experiments confirm the moire appearance for this case.

Electrical analysis of Metal-Ferroelectric - Semiconductor Field - Effect Transistor with SPICE combined with Technology Computer-Aided Design (Technology Computer-Aided Design과 결합된 SPICE를 통한 금속-강유전체-반도체 전계효과 트랜지스터의 전기적 특성 해석)

  • Kim, Yong-Tae;Shim, Sun-Il
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.12 no.1 s.34
    • /
    • pp.59-63
    • /
    • 2005
  • A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.

  • PDF

Analyzing the Impact of Social Distancing on the Stoning Ritual of the Islamic Pilgrimage

  • Ilyas, Qazi Mudassar;Ahmad, Muneer;Jhanjhi, Noor Zaman;Ahmad, Muhammad Bilal
    • KSII Transactions on Internet and Information Systems (TIIS)
    • /
    • v.16 no.6
    • /
    • pp.1953-1972
    • /
    • 2022
  • The COVID-19 pandemic has resulted in a profound impact on large-scale gatherings throughout the world. Social distancing has become one of the most common measures to restrict the spread of the novel Coronavirus. Islamic pilgrimage attracts millions of pilgrims to Saudi Arabia annually. One of the mandatory rituals of pilgrimage is the symbolic stoning of the devil. Every pilgrim is required to perform this ritual within a specified time on three days of pilgrimage. This ritual is prone to congestion due to strict spatiotemporal requirements. We propose a pedestrian simulation model for implementing social distancing in the stoning ritual. An agent-based simulation is designed to analyze the impact of inter-queue and intra-queue spacing between adjacent pilgrims on the throughput and congestion during the stoning ritual. After analyzing several combinations of intra-queue and inter-queue spacings, we conclude that 25 queues with 1.5 meters of intra-queue spacing result in an optimal combination of throughput and congestion. The Ministry of Hajj in Saudi Arabia may benefit from these findings to manage and plan pilgrimage more effectively.

Development of a system dynamics computer model to simulate the operational effects of the new environmental technology certification system (환경신기술인증제도의 운영효과를 모의하기 위한 시스템다이내믹스 컴퓨터 모델의 개발)

  • Kim, Taeyoung;Park, Suwan
    • Journal of Korean Society of Water and Wastewater
    • /
    • v.34 no.2
    • /
    • pp.105-114
    • /
    • 2020
  • In this study, based on the System Dynamics (SD) methodology, the interrelationship between the factors inherent in the operation of the New Technology Certification System (NTCS) in Korea was identified by a causal map containing a feedback loop mechanism in connection with 'new technology development investment', 'commercialization of new technology', and 'sales by new technology'. This conceptualized causal map was applied to the simulation of the operations of the New Excellent Technology and Environmental Technology Verification System (NET&ETV) run by the Ministry of Environment among various NTCSs in Korea. A SD computer simulation model was developed to analyze and predict the operational performance of the NET&ETV in terms of key performance indices such as 'sales by new technology'. Using this model, we predicted the future operational status the NET&ETV and found a policy leverage that greatly influences the operation of the NET&ETV. Also the sensitivity of the key indicators to changes in the external variables in the model was analyzed to find policy leverage.

New Monte-Carlo based simulation program suitable for low-energy ions irradiation in pure materials

  • Ghadeer H. Al-Malkawi;Al-Montaser Bellah A. Al-Ajlony;Khaled F. Al-Shboul;Ahmed Hassanein
    • Nuclear Engineering and Technology
    • /
    • v.55 no.4
    • /
    • pp.1287-1299
    • /
    • 2023
  • A new Monte-Carlo-based computer program (RDS-BASIC) is developed to simulate the transport of energetic ions in pure matter. This computer program is utilizing an algorithm that uses detailed numerical solutions for the classical scattering integral for evaluating the outcomes of the binary collision processes. This approach is adopted by several prominent similar simulation programs and is known to provide results with higher accuracy compared to other approaches that use approximations to shorten the simulation time. Furthermore, RDS-BASIC simulation program contains special methods to reduce the displacement energy threshold of surface atoms. This implementation is found essential for accurate simulation results for sputtering yield in the case of very low energy ions irradiation (near sputtering energy threshold) and also successfully solve the problem of simultaneously obtaining an acceptable number of atomic displacements per incident ions. Results of our simulation for several irradiation systems are presented and compared with their respective TRIM (SRIM-2013) and the state-of-the-art SDTrimSP simulation results. Our sputtering simulation results were also compared with available experimental data. The simulation execution time for these different simulation programs has also been compared.

Die Design of Semi-Solid Forging by Computer Simulation and their Experimental Investigation (Computer Simulation에 의한 Semi-Solid 단조금형의 설계 및 실험적 검정)

  • Seo P. K.;Lee D. H.;Kang C. G.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2000.10a
    • /
    • pp.185-190
    • /
    • 2000
  • Die design by computer simulation has some advantages compared with the conventional method which has performed by designer's experiences and trials and errors. The die filling and solidification process of thixoforming process were simulated by MAGMAsoft/thixo module. First of all, thixoforming die design was applied to previously geometry shape. The value of pressure distribution shows high and uniform as the gate diameter is 18mm. Designed gating system considering the deformation of die and product was suggested by the filling simulation. Gate velocity(7.25m/s) of designed gating system shows that propriety to semi-solid metal working process and CAE results were in good agreement with experimental results.

  • PDF

Predictive Role of Computer Simulation in Assessing Signaling Pathways of Crizotinib-treated A549 Lung Cancer Cells

  • Xia, Pu;Mou, Fei-Fei;Wang, Li-Wei
    • Asian Pacific Journal of Cancer Prevention
    • /
    • v.13 no.7
    • /
    • pp.3119-3121
    • /
    • 2012
  • Non-small-cell lung cancer (NSCLC) is a leading cause of cancer deaths worldwide. Crizotinib has been approved by the U.S. Food and Drug Administration for the treatment of patients with advanced NSCLC. However, understanding of mechanisms of action is still limited. In our studies, we confirmed crizotinib-induced apoptosis in A549 lung cancer cells. In order to assess mechanisms, small molecular docking technology was used as a preliminary simulation of signaling pathways. Interesting, our results of experiments were consistent with the results of computer simulation. This indicates that small molecular docking technology should find wide use for its reliability and convenience.

Analysis semiconductor FAB line on computer modeling & simulation (컴퓨터 모델링과 시뮬레이션을 통한 반도체 FAB Line 분석)

  • 채상원;한영신;이칠기
    • Proceedings of the Korea Society for Simulation Conference
    • /
    • 2002.11a
    • /
    • pp.115-121
    • /
    • 2002
  • The growth of semiconductor industry attracted to researchers like design, facility technique and making small size chip areas. But nowadays, cause of technology extension and oversupply and price down, yield improvement is the most important point on growth. This paper describes the computer mode]ing technique as the solutions to analyze the problem, to formalize the semiconductor manufacturing process and to build advanced manufacturing environments. The computer models are built referring an existing 8' wafer production line in Korea.

  • PDF