• Spatial Information Research
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• v.7 no.1
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• pp.63-79
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• 1999

In this research, the operational principle and the internal algorithm of theodolite measuring systems are studied and coded for a new software, and the feasibility of the laser system for the above mentioned usage is studied by simulation set-up of the system in the laboratory environment, and for the theodolite system modules for the communication between theodolite and computer is implemented, the data collection and storage, the simultaneous photogrammetric ' bundle ' adjustment for the theodolite position and the target points are coded, compiled and tested. for the simulation set-up of the laser system extensive studies on laser sources and laser detectors are performed, the system composition for the system simulation in the laboratory environment is studied and implemented, and the beam fluctuation due to the environmental changes in the course of the laser beam, such as changes in current of wind or in temperature is experimented. According to Experiment on the Source of 17 meters interval and the Detector, Laser beam is almost doesn't depend on air How, but it is effected by variations of temperature and light. Selecting cloudy day and time without change of temperature, it was realized that it is possible to perform deformation measurement more than approximately 2mm precision.precision.

• Journal of KIISE:Software and Applications
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• v.31 no.5
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• pp.677-696
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• 2004

Component-based software engineering (CBSE) composes reusable components and develops applications with the components. CBSE is admitted to be a new paradigm that reduces the costs and times to develop software systems. The high quality of component designs can be assured if the consistency and correctness among the elements of a component are verified with formal specifications. Current formal languages for components include only some parts of contracts between interfaces, structural aspects and behavioral aspects of component, component-based system, component composition and variability. Therefore, it is not adequate to use current formal languages in all steps of a component design process. In this paper, we suggest a formal language to specify component designs Component-Z. Component-Z extends Object-Z, adds new notations to specify components. It can be possible to specify interfaces, the inner structure of a component, inner workflows, and workflows among interfaces with Component-Z. In addition, Component-Z provides the notations and semantics to specify variability with variation points, variants and required interfaces. The relation between interfaces and components is defined with mapping schemas. Parallel operator is used to specify component composition. It can be possible to describe deployed components with the specifications of component-based systems. Therefore, the formal specification language proposed in this paper can represent all elements to design components. In the case study, we specify an account management system in a bank so that we show that Component-Z can be used in all steps of component design.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2004.11a
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• pp.266-270
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• 2004

SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine because it has excellent high temperature strength, low coefficient of thermal expansion, good resistance to oxidation and good thermal and chemical stability etc. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, SiC/SiC composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing jiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of SiC/SiC composites by hot pressing method. In the present work, monolithic Liquid Phase Sintered SiC (LPS-SiC) was fabricated by hot pressing method in Ar atmosphere at $1800^{\circ}C$ under 20MPa using $Al_2O_3,\;Y_2O_3\;and\;SiO_2$ as sintering additives in order to low sintering temperature and sintering pressure. The starting powder was high purity $\beta-SiC$ nano-powder with all average particle size of 30mm. The characterization of LPS-SiC was investigated by means of SEM and three point bending test. Base on the composition of sintering additives-, microstructure- and mechanical property correlation, tire compositions of sintering additives are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.594-599
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• 2007

[ $CulnS_2$ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature $200^{\circ}C$. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the annealed $200^{\circ}C$ of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for $200^{\circ}C$ material can be conveniently described by non-molecularity$({\Delta}x=[Cu/In]-1)$ and non-stoichiometry $({\Delta}y=[{2S/(Cu+3In)}-1])$. The variation of ${\Delta}x$ would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The ${\Delta}y$ parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with ${\Delta}y>0$ would behave as p-type material while ${\Delta}y<0$ would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}cm^{-3},\;312.502cm^2/V{\cdot}s\;and\;2.36{\times}10^{-2}\;{\Omega}{\cdot}cm$, respectively.

• Journal of Microbiology and Biotechnology
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• v.32 no.5
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• pp.564-574
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• 2022

Microbial diversity in the soil is responsive to changes in soil composition. However, the impact of soil amendments on the diversity and structure of rare and abundant sub-communities in agricultural systems is poorly understood. We investigated the effects of different Chinese herb residue (CHR) soil amendments and cropping systems on bacterial rare and abundant sub-communities. Our results showed that the bacterial diversity and structure of these sub-communities in soil had a specific distribution under the application of different soil amendments. The CHR soil amendments with high nitrogen and organic matter additives significantly increased the relative abundance and stability of rare taxa, which increased the structural and functional redundancy of soil bacterial communities. Rare and abundant sub-communities also showed different preferences in terms of bacterial community composition, as the former was enriched with Bacteroidetes while the latter had more Alphaproteobacteria and Betaproteobacteria. All applications of soil amendments significantly improved soil quality of newly created farmlands in whole maize cropping system. Rare sub-communitiy genera Niastella and Ohtaekwangia were enriched during the maize cropping process, and Nitrososphaera was enriched under the application of simple amendment group soil. Thus, Chinese medicine residue soil amendments with appropriate additives could affect soil rare and abundant sub-communities and enhance physicochemical properties. These findings suggest that applying soil composite amendments based on CHR in the field could improve soil microbial diversity, microbial redundancy, and soil fertility for sustainable agriculture on the Loess Plateau.