• Korean Journal of Materials Research
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• v.4 no.2
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• pp.143-151
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• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.