• 제목/요약/키워드: Complex dielectric constant

검색결과 131건 처리시간 0.02초

Static Dielectric Constant and Relaxation Time for the Binary Mixture of Water, Ethanol, N. N-Dimethylformamide, Dimethylsulphoxide, and N, M-Dimethylacetamide with 20Hethoxyethanol

  • Ajay Chaudgari;N. M. More;S. C. Mehrotra
    • Bulletin of the Korean Chemical Society
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    • 제22권4호
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    • pp.357-361
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    • 2001
  • Frequency spectra of the complex permittivity of 2-methoxyethanol (2-ME) with water, ethanol, dimethylsulphoxide (DMSO), N,N-dimethylformamide (DMF) and N,N-dimethylacatamide (DMA) have been determined over the frequency range of 10 MHz to 20 GHz at 25 $^{\circ}C$, using the Time domain reflectometry method, for 11 concentrations for each system. The static dielectric constant, dielectric constant at microwave frequency, relaxation time, excess dielectric parameters, and Kirkwood correlation factor have been determined. The relaxation in these systems within the frequency range can be described by a single relaxation time constant, using the Debye model. The parameters show a systematic change with the concentration.

$La(Zn_{1/2}Ti_{1/2})O_3$의 합성 및 고주파 유전특성 (Synthesis and Microwave Dielectric Properties of $La(Zn_{1/2}Ti_{1/2})O_3$)

  • 서명기;조서용;홍국선;박순자
    • 한국세라믹학회지
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    • 제33권9호
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    • pp.1019-1023
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    • 1996
  • The dielectric properties at microwave frequencies of B site complex perovskite La(Zn1/2Ti1/2)O3 which has +3 ion in A site were investigated. maximum Q*F value of the specimens was 59000 dielectric constant 34, temperature coefficient of resonant frequency -52 ppm/$^{\circ}C$. XRD pattern of the sintered specimen shows (111) ssuperlattice reflection which indicates Zn and Ti cation ordering.

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유전상수 센서를 이용한 유압 작동유의 분석을 위한 실험장비 개발 (Development of Experimental Device for Analysis of Hydraulic Oil Characteristics with Dielectric Constant Sensors)

  • 홍성호
    • Tribology and Lubricants
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    • 제37권2호
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    • pp.41-47
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    • 2021
  • An experimental device was developed for analysis of hydraulic oil characteristics with dielectric constant sensors. Online analysis is the most effective method of the three methods used for analyzing lubricant oils. This is because it can monitor the machine condition effectively using oil sensors in real time without requiring excellent analysis skill and eliminates human errors. Determining the oil quality usually requires complex laboratory equipment for measuring factors such as density, viscosity, base number, acid number, water content, additive, and wear debris. However, the electric constant is another indicator of oil quality that can be measured on-site. The electric constant is the ratio of the capacitance of a capacitor using that material as a dielectric, compared with a similar capacitor that has a vacuum as its dielectric. The electric constant affects the factors such as the base oil, additive, temperature, electric field frequency, water content, and contaminants. In this study, the tendency of the electric constant is investigated with a variation of temperature, water content, and dust weight. The experimental device can control working temperature and mix the contaminants with oil. A machine condition monitoring program developed to analyze hydraulic oil is described. This program provides graph and digital values with variation of time. Moreover, it includes an alarm system for when the oil condition is bad.

매립지 침출수로 오염된 토양의 측정주파수에 따른 유전특성 변화 (Complex Dielectric Constant of Soil Contaminated by Landfill Leachate with Measured Frequency)

  • 오명학;방선영;박준범;이주형;이석헌;안규홍
    • 한국지하수토양환경학회지:지하수토양환경
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    • 제9권3호
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    • pp.1-11
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    • 2004
  • 매립지 침출수로 오염된 지반의 오염도 조사에 유전상수 측정기법의 적용성을 평가하기 위하여 매립지 침출수로 오염된 간극수를 포함한 사질토 지반의 유전특성을 분석하였다. 본 연구에서는 75kHz-12MHz 범위의 주파수에서 유전 상수를 실수부와 허수부로 구분하여 분석을 수행하였다. 유전상수 실수부는 공간전하분극과 배향분극의 발현정도에 영향을 받기 때문에 침출수 농도가 증가함에 따라 저주파 영역에서는 유전상수의 실수부 값이 증가하는 경향을 나타내었으나, 고주파 영역에서는 감소하는 경향을 나타내었다. 유전상수 허수부의 경우에는 측정 주파수에 관계없이 침출수의 농도가 증가함에 따라 전류전도에 의한 에너지 손실량이 증대되어 유전상수 허수부가 증가하는 경향을 나타내었다. 유전상수의 실수부와 허수부가 간극수 내 침출수 농도에 따라 변하는 것에 기초하여 유전상수 측정기법이 침출수로 오염된 지반의 오염도 평가에 효과적으로 적용될 수 있음을 확인하였다.

유전알고리듬을 이용한 도체 입자가 함유된 복합물질의 복수유전율 측정 (Complex Dielectric Constant Measurements for Conductor-Loaded Composite Materials Using Genetic Algorithms)

  • 이상일
    • 한국통신학회논문지
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    • 제30권2C호
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    • pp.10-15
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    • 2005
  • 본 논문에서는 전송방식과 유전알고리듬을 이용하여 간단하지만 빠르고 신뢰성 있는 복수유전율 측정 기법을 제안한다. 측정된 S-파라메터 중 전파계수만을 이용하여 복수 유전율을 얻었으며, 그 이유는 전파계수만을 이용한 복수유전율 측정기법이 반사 계수를 이용한 방법보다 측정오차에 대해 안정적인 결과 값을 제공하였기 때문이다. 또한 역추출 방식으로 유전알고리듬을 적용함으로써 매우 효율적이고 정확한 측정결과 값을 얻을 수 있었다. 제안된 방법을 이용하여 도체입자가 함유된 복합유전체 및 PCB 기판의 복소유전율을 측정하였다.

초고주파 대역에서의 기판의 유전상수 및 손실계수 측정 (Measurements of Dielectric constant and Loss tangent of Microwave Substrates)

  • 이선하;한상민;김영식
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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    • pp.238-242
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    • 2000
  • In this paper, the method for dielectric constant and less tangent measurements of microwave substrates using a microstrip line is presented. The two samples of an open-ended line and a short-ended tine are made and complex propagation constant is evaluated from the one-port scattering parameter measurements. This method has been automated fully using a personal computer and a vector network analyzer.

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Ellipsometry를 이용한 저 유전상수를 갖는 SiOCH박막의 광학특성 연구 (A Study of Optical Characteristics Correlated with Low Dielectric Constant of SiOCH Thin Films Through Ellipsometry)

  • 박용헌
    • 한국전기전자재료학회논문지
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    • 제23권3호
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    • pp.228-233
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    • 2010
  • We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

Leaky Dispersion Characteristics in Circular Dielectric Rod Using Davidenko's Method

  • Kim Ki Young;Tae Heung-Sik;Lee Jeong-Hae
    • Journal of electromagnetic engineering and science
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    • 제5권2호
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    • pp.72-79
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    • 2005
  • The leaky dispersion characteristics of a circular dielectric rod were investigated using Davidenko's method for several lower-order transverse magnetic(TM) modes. The normalized complex propagation constants were precisely determined and their tolerances below $10^{-10}$ compared with zero for both real and imaginary parts. It was also checked whether the normalized complex propagation constants obtained represented forward leaky waves. The leaky modes existing below the cutoff frequency of the guided mode were classified as a nonphysical mode, reactive mode, antenna mode, and spectral gap based on a precise determination of the complex propagation constants. Finally, the effects of the dielectric constant and radius of the dielectric rod on the leaky dispersion characteristics were also considered.

Ellipsometry를 이용한 Low-k SiOCH 박막의 유전특성에 관한 연구 (A Study of the Dielectric Characteristics of the Low-k SiOCH Thin Films by Ellipsometry)

  • 이인환;황창수;김홍배
    • 한국전기전자재료학회논문지
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    • 제21권12호
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    • pp.1083-1089
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    • 2008
  • We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

(1-x)Ba($Mg_{1/3}Ta_{2/3})O_3$-xBa($Co_{1/3}Nb_{2/3})O_3$(x=0.25~0.5) 세라믹스의 구조 및 마이크로파 유전특성 (The structural and Microwave Dielectric Properties of (1-x)Ba($Mg_{1/3}Ta_{2/3})O_3$-xBa($Co_{1/3}Nb_{2/3})O_3$(x=0.25~0.5) Ceramics)

  • 황태광;최의선;임인호;이영희
    • 한국전기전자재료학회논문지
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    • 제14권3호
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    • pp.197-201
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    • 2001
  • The microwave dielectric properties of (1-x)Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3)O$_3$(x=0.25~0.5) ceramics depending on the Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BCN] contents and the possibility of application as a microwave dielectric resonator were investigated. The specimens were prepared by he conventional mixed oxide method using there sintering temperature of 1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As the mole fraction of BCN increased, dielectric constant increased while temperature coefficient of resonant frequency decreased. The highest value of quality factor, Qxf$_{0}$=138,205GHz, obtained in the sample of 0.9BMT-0.1BCN ceramics. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Qxf$_{0}$=75,325GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.EX>.

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