• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.75-78
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• 2004

$Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.352-355
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• 2003

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the LaNiO3 (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thin films were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization $P_r$ and coercive field were $23.5\;{\mu}C/cm^2$ and 120 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.66-66
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• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• Journal of the Korean Society for Heat Treatment
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• v.8 no.2
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• pp.149-154
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• 1995

The alloying of 6.5wt % Silicon in iron decreases the magnetization and the anisotropy and minimizes the iron loss noticeably. But it is very difficult to make thin sheets because of its poor ductility which is due to an ordering reaction (body centered cubic to CsCI type crystal structure). However the ordering reaction can be suppressed by rapid solidification method. The cooling rate of rapidly solidified Fe-6.5wt % Si alloy is about $10^3K/s$ and rapidly solidified structure are fine structure, cellular structure, dendrite and equiaxed grain from surface. The precipitates of $DO_3$ Phase emerges on $B_2$ matrix and the coercive force was 0.51 Oe (50cycle, 15KGauss) in Fe-6.5wt% Si alloy which was processed by heat treatment of $1150^{\circ}C$ for 1hr in high vacuum.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.522-529
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• 2000

We present a new procedure to evaluate the residual life of 1Cr-1Mo-0.25V steel by reversible magnetic permeability. The method is based on the existence of the first harmonics in the differential magnetization around the coercive force. The apparatus is based on the detection of the voltage induced in a coil using a lock-in amplifier tuned to a frequency of the exciting one. Results obtained for the first harmonics and Vickers hardness on the aged samples show that the peak interval of reversible permeability and Vickers hardness decrease as ageing time increases. The correlation between Vickers hardness and the peak interval of the reversible permeability could well be used to evaluate the residual life of 1Cr-1Mo-0.25V steel, nondestructively.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.194-194
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• 2003

As a result of the recent miniaturization an enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with high magnetic permeability in the high frequency range, high saturation magnetization, in high electrical resistivity, and low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm and 1 $\mu\textrm{m}$ thickness were deposited on Si wafer, using RF magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2mTorr, O$_2$ partial pressure of 5%, input power of 400W, and Al pellets on an Fe disk with purity of 99,9%. Magnetic properties of the continuous films as followed: the 4$\pi$M$\_$s/ of 19.4kG, H$\_$c/ of 0.6Oe, H$\_$k/ of 6.0Oe and effective permeability of 2500 up to 100㎒ were obtained. In this work, we expect to enhance effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• Journal of National Security and Military Science
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• s.8
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• pp.239-270
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• 2010

This thesis is to make an appropriate national defense policy of Republic of Korea through studying the Hegemony Strategy of United States. I searched the theory of hegemony. The hegemony was differently defined by the point of time and region. The strong power nations with the hegemony have been making efforts to maintain their hegemony everytime. I have conclusion that the presence of hegemony once emerged, it brought regional stability in place whether it is coercive or beneficial. The stability and instability of international order IS not exclusively dependent on hegemony. Even if the safety of hegemony cannot guarantee absolute stability of international order, there IS on doubt that the hegemony has enormous impact on that. According to the hegemonic theory, the history of mankind equals to the history of rising and falling hegemony. The international order was changed as the hegemony changes. The United States has been making efforts to maintain her global hegemony during the post cold-war era as well. Taking all these into consideration, relevant military strategy direction able to pursue national interest is that to make up for the relative weakness in the strategic environment. South Korea have to prepare security policy response as following. First, South Korea should build the military force equipped with advanced weapons in military technology sector and solidify military diplomatic relation able to form cooperative relation in wartime. Second, South Korea should make solid Alliance of Korea and U.S. Third, develop and maintain multilateral security cooperation of East Asia. Forth, we could realize that there are means that can neutralize opponent's strong point by seeking one or two and more asymmetry in the aspect of strategy, tactics, and means through asymmetric strategy. Than the military force of South Korea should develop into a force that is able to overcome to the traditional North Korea's threat and new type of conflicts. And the force should have sufficient strength and be deployed to effectively defend the Korean Peninsula. So, we need to establish a denial and defense system against any hostile neighboring country. Therefore, ROK military forces preparing for the future should try to construct a future military power to gradually establish enough strength for self-defense to prepare for a uncertain security environment and when the Korean Peninsula is unified in a future.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.68-77
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• 1994

Grid type 70Ni-30Co thin films on slide glass at $250^{\circ}C$ has been fabricated to develope. From fabricated sensors using above process, we investigated the relation of temperature, resistivity, line width to magnetoresistance and we obtained the following results after observation of coercive force, saturated magnetization, maxium usable sensitivity, delay time, slew rate, white noise, resolution of the sensors. We confirmed that the $600{\AA}$ thin film at $250^{\circ}C$ formed crystalized magnetic anisotropy spontaneously and the sensor using the thin film had capability of detecting magnetic field with sensitivity of 230 nT. In these devices, the magnetoresistance change was increased linearly in ${\pm}10$ Oe range, and the magnetoresistance effect was increased when the ratio between line width and length was increased. When the devices was soldered using indium, the temperature-resistivity coefficient showed $8{\times}10^{-3}/deg$ and increased during the specific properties as magnetic field sensor were weakened. In this studies, the coercive forces of the films were about 5.1 A/cm and saturated magnetizations were 0.64 T, and the delay time in these devises was $5{\mu}s$ and slew rate showed 0.39 $Oe/{\mu}s$ and white noise was -120 dB.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.210-219
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• 2000

The magnetoresistance characteristics of FeN/Co/Cu/Co and FeN/Co/Cu/Co/Cu/Co/FeN multilayers using ferromagnetic iron-nitrides (FeN) has been studied. The microstructure of FeN film is the mixed ${\alpha}$-Fe and $\varepsilon$-Fe$_3$N phase on the condition that the flow rate of N$_2$ gas is over 0.4 sccm. The magnetoresistance effect is observed because of shape magnetic anisotropy induced by needle-shaped $\varepsilon$-Fe$_3$N phase. This magnetoresistance effect changes, because the degree that the shape magnetic anisotropy adheres to the adjacent Co pinned layer is varied according to the flow rate of N$_2$ gas and the thickness of FeN film. The best magnetoresistance effect is obtained on the condition that the thickness of Co free layer is 70 ${\AA}$ and the maximum MR ratio(%) value of 3.2% shows in the FeN(250 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/FeN(250 ${\AA}$) mutilayer film which is fabricated at the N, gas flow rate of 0.5 sccm and the FeN film thickness of 250 ${\AA}$. Four steps are observed in the magnetoresistance curve owing to this difference of coercive force, because respective magnetic layers in the multilayer possess different coercive forces. These effects observed in these mutilayer films can be expected to application to the memory device the same MRAM as can carry out simultaneously four signals.

• Journal of the Korean Magnetics Society
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• v.2 no.3
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• pp.244-250
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• 1992

Iron nitride $Fe_4N$ by partial substitution of nitrogen by carbon was prepared by nitriding the iron oxalate whose thermal decomposition gives a carburating atmosphere. Iron oxalates, the precursors, were prepared by precipitation and co-precipitation. The size and shape of the carbonitride particles could be controlled by modifying the conditions of preparation of the oxalate precursor. From the results of electron micrographs, it is clear that the $Fe_4N$ pigment particle maintains the original shape(needle shape) of the starting materials and that it consists of fine unit particles which link together to form a stereo-network structure. An investigation of the $Fe^{II}_3\;Fe^I_{1-x}\;Sn_xN_{1-y}C_y$ solid solution has shown that Sn plays the role of a growth inhibitor of the elementary microcrystallites of the iron carbonitride. The coercive force and saturation magnetization of iron carbonitride obtained from co-precipitated iron oxalate were 500 Oe and 120 emu/g, respectively.