• Title/Summary/Keyword: Coating density

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Corrosion Behaviors of TiN Coated Dental Casting Alloys (TiN피막 코팅된 치과주조용 합금의 부식거동)

  • Jo, Ho-Hyeong;Park, Geun-Hyeng;Kim, Won-Gi;Choe, Han-Cheol
    • Korean Journal of Metals and Materials
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    • v.47 no.2
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    • pp.129-137
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    • 2009
  • Corrosion behaviors of TiN coated dental casting alloys have been researched by using various electrochemical methods. Three casting alloys (Alloy 1: 63Co-27Cr-5.5Mo, Alloy 2: 63Ni-16Cr-5Mo, Alloy 3: 63Co-30Cr-5Mo) were prepared for fabricating partial denture frameworks with various casting methods; centrifugal casting(CF), high frequency induction casting(HFI) and vacuum pressure casting(VP). The specimens were coated with TiN film by RF-magnetron sputtering method. The corrosion behaviors were investigated using potentiostat (EG&G Co, 263A. USA) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion morphologies were analyzed using FE-SEM and EDX. Alloy 1 and Alloy 2 showed the ${\alpha}-Co$ and ${\varepsilon}-Co$ phase on the matrix, and it was disappeared in case of TiN coated Alloy 1 and 2. In the Alloy 3, $Ni_2Cr$ second phases were appeared at matrix. Corrosion potentials of TiN coated alloy were higher than that of non-coated alloy, but current density at passive region of TiN coated alloy was lower than that of non-coated alloy. Pitting corrosion resistances were increased in the order of centrifugal casting, high frequency induction casting and vacuum pressure casting method from cyclic potentiodynamic polarization test.

Development of Bi0.5(Na0.78K0.22)0.5TiO3 Lead-free Piezoelectric Ceramic Material with Core-shell Structure for Biomedical (바이오 메디컬용 코어-쉘 구조의 Bi0.5(Na0.78K0.22)0.5TiO3계 무연압전세라믹 소재의 개발)

  • Seong-jun Yun;Joonsoo Bae
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.46 no.3
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    • pp.15-22
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    • 2023
  • BNKT Ceramics, one of the representative Pb free based piezoelectric ceramics, constitutes a perovskite(ABO3) structure. At this time, the perovskite structure (ABO3) is in the form where the corners of the octahedrons are connected, and in the unit cell, two ions, A and B, are cations, A ion is located at the body center, B ion is located at each corner, and an anion O is located at the center of each side. Since Bi, Na, and K sources constituting the A site are highly volatile at a sintering temperature of 1100℃ or higher, it is difficult to maintain uniformity of the composition. In order to solve this problem, there should be suppression of volatilization of the A site material or additional compensation of the volatilized. In this study, the basic composition of BNKT Ceramics was set to Bi0.5(Na0.78K0.22)0.5TiO3 (= BNKT), and volatile site (Bi, Na, and K sources) were coated in the form of a shell to compensate additionally for the A site ions. In addition, the physical and electrical properties of BNKT and its coated with shell additives(= @BNK) were compared and analyzed, respectively. As a result of analyzing the crystal structure through XRD, both BNKT(Core) and @BNK(Shell) had perovskite phases, and the crystallinity was almost similar. Although the Curie temperature of the two sintered bodies was almost the same (TC = 290 ~ 300 ℃), it was confirmed that the d33 (piezoelectric coefficient) and Pr (residual polarization) values were different. The experimental results indicated that the additional compensation for a shell additive causes the coarsening, resulting in a decrease in sintering density and Pr(remanent polarization). However, coating shell additives to compensate for A site ion is an effective way to suppress volatilization. Based on these experimental results, it would be the biggest advantage to develop an eco-friendly material (Lead-free) that replaced lead (Pb), which is harmful to the human body. This lead-free piezoelectric material can be applied to a biomedical device or products(ex. earphones (hearing aids), heart rate monitors, ultrasonic vibrators, etc.) and skin beauty improvement products (mask packs for whitening and wrinkle improvement).

Chemistry of mist deposition of organic polymer PEDOT:PSS on crystalline Si

  • Shirai, Hajime;Ohki, Tatsuya;Liu, Qiming;Ichikawa, Koki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.388-388
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    • 2016
  • Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated with cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature $T_s$, and substrate dc bias $V_s$ as variables for efficient PEDOT:PSS/crystalline (c-)Si heterojunction solar cells (Fig. 1). The high-speed camera and differential mobility analysis characterizations revealed that average size and flux of PEDOT:PSS mist depend on f, solvent, and $V_s$. The size distribution of mist particles including EG/DI water cosolvent is also shown at three different $V_s$ of 0, 1.5, and 5 kV for a f of 3 MHz (Fig. 2). The size distribution of EG/DI water mist without PEDOT:PSS is also shown at the bottom. A peak maximum shifted from 300-350 to 20-30 nm with a narrow band width of ~150 nm for PEDOT:PSS solution, whose maximum number density increased significantly up to 8000/cc with increasing $V_s$. On the other hand, for EG/water cosolvent mist alone, the peak maximum was observed at a 72.3 nm with a number density of ~700/cc and a band width of ~160 nm and it decreased markedly with increasing $V_s$. These findings were not observed for PEDOT:PSS/EG/DI water mist. In addition, the Mie scattering image of PEDOT:PSS mist under white bias light was not observed at $V_s$ above 5 kV, because the average size of mist became smaller. These results imply that most of solvent is solvated in PEDOT:PSS molecule and/or solvent is vaporized. Thus, higher f and $V_s$ generate preferentially fine mist particle with a narrower band width. Film deposition occurred when $V_s$ was impressed on positive to a c-Si substrate at a Ts of $30-40^{\circ}C$, whereas no deposition of films occurred on negative, implying that negatively charged mist mainly provide the film deposition. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrate by adjusting $T_s$ and $V_s$. The adhesion of CMD PEDOT:PSS to c-Si enhanced by $V_s$ conspicuously compared to that of spin-coated film. The CMD PEDOT:PSS/c-Si solar cell devices on textured c-Si(100) exhibited a ${\eta}$ of 11.0% with the better uniformity of the solar cell parameters. Furthermore, ${\eta}$ increased to 12.5% with a $J_{sc}$ of $35.6mA/cm^2$, a $V_{oc}$ of 0.53 V, and a FF of 0.67 with an antireflection (AR) coating layer of 20-nm-thick CMD molybdenum oxide $MoO_x$ (n= 2.1) using negatively charged mist of 0.1 wt% 12 Molybdo (VI) phosphoric acid n-Hydrate) $H_3(PMo_{12}O_40){\cdot}nH_2O$ in methanol. CMD. These findings suggest that the CMD with negatively charged mist has a great potential for the uniform deposition of organic and inorganic on textured c-Si substrate by adjusting $T_s$ and $V_s$.

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Influence of Soil Temperature on Growth and Nodulation Competition of Bradyrhizobium sp. Strains in the Rhizosphere of Peanut (온도(溫度)가 땅콩근류균(根瘤菌)의 근류형성(根瘤形成) 경합(競合)에 미치는 영향(影響))

  • Lee, Sand-Bok;Choi, Youn-Hee;So, Jae-Don;Kim, Moo-Key
    • Korean Journal of Soil Science and Fertilizer
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    • v.26 no.3
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    • pp.197-203
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    • 1993
  • Greenhouse experiments were conducted to avaluate strain competition, nodulation, patterns of nodule occupancy and population changes of Bradyrhizobium sp. strain HCR-46 $str^{r}cep^{r}$ and CB756 $str^{r}rif^{r}$ in the rhizosphere of peanut(Arachis hypogaea L.) under different root temperatures. Inoculated with two strains using seed coating with peat slurry under different root temperatures, population of each strain in the rhizosphere increased with plant growth and multiplication rate of inoculum in the unit weight of root were showed the highest from 10 to 15days after sowing. The multiplication rate of inoculum in the rhizosphere was $28^{\circ}C$>$34^{\circ}C$>$22^{\circ}C$. The density of HCR-46 $str^{r}cep^{r}$ was more increased than that of CB756 $str^{r}rif^{r}$ under $22^{\circ}C$ and $28^{\circ}C$. While the density of two strains showed no difference under $34^{\circ}C$. Inoculated with HCR-46 $str^{r}cep^{r}$ and CB756 $str^{r}rif^{r}$, respectively at 22, 28 and $34^{\circ}C$, nodulation of each strain was dominated in its inoculation portion. Inoculated with the mixture of HCR-46 $str^{r}cep^{r}$ and CB756 $str^{r}rif^{r}$, occupancy rate of HCR-46 $str^{r}cep^{r}$ was dominated over that of CB756 $str^{r}rif^{r}$ at $22^{\circ}C$ and $28^{\circ}C$, but that was similar between them at $34^{\circ}C$. Dry mass, nodulation, nitrogen content per plant and nitrogenase activity showed higher at $28^{\circ}C$ than at $32^{\circ}C$ and $22^{\circ}C$, while those were higher in HCR-46 $str^{r}cep^{r}$ and mixing HCR-46 $str^{r}cep^{r}$ with CB756 $str^{r}rif^{r}$ than in CB756 $str^{r}rif^{r}$.

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New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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MnO2 co-catalyst effect on Photoelectrochemical Properties of GaN Photoelectrode (MnO2 조촉매가 코팅된 GaN 광전극의 광전기화학적 특성)

  • Kim, Haseong;Bae, Hyojung;Kang, Sung-Ju;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.4
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    • pp.113-117
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    • 2016
  • Recently, hydrogen is regarded as important energy in the future, because it is clean and renewable. The photoelectrochemical (PEC) system, which produce hydrogen using water splitting by solar energy, is one of the most promising energy systems because it has abundant energy sources and good theoretical efficiency. GaN has recently been regarded as suitable photoelectrode that could be used to split water to generate hydrogen without extra bias because its band edge position include water redox potential ($V_{redox}=1.23$ vs. SHE). GaN also shows considerable corrosion resistance in aqueous solutions and it is possible to control its properties, such as structure, band gap, and catalyst characteristics, in order to improve solar energy conversion efficiency. But, even if the band edge position of GaN make PEC reaction facilitate without bias, the overpotential of oxygen evolution reaction could reduce the efficiency of system. One of the ways to decrease overpotential is introduction of co-catalyst on photoelectrode. In this paper, we will investigate the effect of manganese dioxide ($MnO_2$) as a co-catalyst. $MnO_2$ particles were dispersed on GaN photoelectrode by spincoater and analyzed properties of the PEC system using potentiostat (PARSTAT4000). After coating $MnO_2$, the flat-band potential ($V_{fb}$) and the onset voltage ($V_{onset}$) were moved negatively by 0.195 V and 0.116 V, respectively. The photocurrent density increased on $MnO_2$ coated sample and time dependence was also improved. These results showed $MnO_2$ has an effect as a co-catalyst and it would enhance the efficiency of overall PEC system.

Stellite bearings for liquid Zn-/Al-Systems with advanced chemical and physical properties by Mechanical Alloying and Standard-PM-Route

  • Zoz, H.;Benz, H.U.;Huettebraeucker, K.;Furken, L.;Ren, H.;Reichardt, R.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2000.04a
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    • pp.9-10
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    • 2000
  • An important business-field of world-wide steel-industry is the coating of thin metal-sheets with zinc, zinc-aluminum and aluminum based materials. These products mostly go into automotive industry. in particular for the car-body. into building and construction industry as well as household appliances. Due to mass-production, the processing is done in large continuously operating plants where the mostly cold-rolled metal-strip as the substrate is handled in coils up to 40 tons unwind before and rolled up again after passing the processing plant which includes cleaning, annealing, hot-dip galvanizing / aluminizing and chemical treatment. In the liquid Zn, Zn-AI, AI-Zn and AI-Si bathes a combined action of corrosion and wear under high temperature and high stress onto the transfer components (rolls) accounts for major economic losses. Most critical here are the bearing systems of these rolls operating in the liquid system. Rolls in liquid system can not be avoided as they are needed to transfer the steel-strip into and out of the crucible. Since several years, ceramic roller bearings are tested here [1.2], however, in particular due to uncontrollable Slag-impurities within the hot bath [3], slide bearings are still expected to be of a higher potential [4]. The today's state of the art is the application of slide bearings based on Stellite\ulcorneragainst Stellite which is in general a 50-60 wt% Co-matrix with incorporated Cr- and W-carbides and other composites. Indeed Stellite is used as the bearing-material as of it's chemical properties (does not go into solution), the physical properties in particular with poor lubricating properties are not satisfying at all. To increase the Sliding behavior in the bearing system, about 0.15-0.2 wt% of lead has been added into the hot-bath in the past. Due to environmental regulations. this had to be reduced dramatically_ This together with the heavily increasing production rates expressed by increased velocity of the substrate-steel-band up to 200 m/min and increased tractate power up to 10 tons in modern plants. leads to life times of the bearings of a few up to several days only. To improve this situation. the Mechanical Alloying (MA) TeChnique [5.6.7.8] is used to prOduce advanced Stellite-based bearing materials. A lubricating phase is introduced into Stellite-powder-material by MA, the composite-powder-particles are coated by High Energy Milling (HEM) in order to produce bearing-bushes of approximately 12 kg by Sintering, Liquid Phase Sintering (LPS) and Hot Isostatic Pressing (HIP). The chemical and physical behavior of samples as well as the bearing systems in the hot galvanizing / aluminizing plant are discussed. DependenCies like lubricant material and composite, LPS-binder and composite, particle shape and PM-route with respect to achievable density. (temperature--) shock-reSistibility and corrosive-wear behavior will be described. The materials are characterized by particle size analysis (laser diffraction), scanning electron microscopy and X-ray diffraction. corrosive-wear behavior is determined using a special cylinder-in-bush apparatus (CIBA) as well as field-test in real production condition. Part I of this work describes the initial testing phase where different sample materials are produced, characterized, consolidated and tested in the CIBA under a common AI-Zn-system. The results are discussed and the material-system for the large components to be produced for the field test in real production condition is decided. Outlook: Part II of this work will describe the field test in a hot-dip-galvanizing/aluminizing plant of the mechanically alloyed bearing bushes under aluminum-rich liquid metal. Alter testing, the bushes will be characterized and obtained results with respect to wear. expected lifetime, surface roughness and infiltration will be discussed. Part III of this project will describe a second initial testing phase where the won results of part 1+11 will be transferred to the AI-Si system. Part IV of this project will describe the field test in a hot-dip-aluminizing plant of the mechanically alloyed bearing bushes under aluminum liquid metal. After testing. the bushes will be characterized and obtained results with respect to wear. expected lifetime, surface roughness and infiltration will be discussed.

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