• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Nuclear Engineering and Technology
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• 제53권7호
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• pp.2364-2370
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• 2021

The ⁿMCP (Neutron sensitive microchannel plate) combined with advanced readout electronics is widely used in energy selective neutron imaging because of its good spatial and timing resolution. Neutron detection efficiency is a crucial parameter for the ⁿMCP. In this paper, a mathematical model based on the oblique cylindrical channel and elliptical pore was established to calculate the neutron absorption probability, the escape probability of charged particles and overall detection efficiency of ⁿMCP and analyze the effects of neutron incident position, pore diameter, wall thickness and bias angle. It was shown that when the doping concentration of the ⁿMCP was 10 mol%, the thickness of ⁿMCP was 0.6 mm, the detection efficiency could reach maximum value, about 24% for thermal neutrons if the pore diameter was 6 ㎛, the wall thickness was 2 ㎛ and the bias angle was 3 or 6°. The calculated results are of great significance for evaluating the detection efficiency of the ⁿMCP. In a subsequent companion paper, the mathematical model would be extended to the case of the spatial resolution and detection efficiency optimization of the coating ⁿMCP.

• Korean Chemical Engineering Research
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• 제59권4호
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• pp.639-643
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• 2021

본 연구에서는 3차원 다층 미세유체 디바이스를 제작하기 위한 접착제로서 불소화 에틸렌 프로필렌(fluorinated ethylene propylene, FEP) 나노입자를 연구하였다. FEP 분산 용액을 1500 rpm에서 30초 동안 단순 스핀 코팅하여 기판에 3 ㎛ 두께의 균일하게 분포된 FEP 나노 입자 층을 형성하였다. FEP 나노입자는 300 ℃에서 1시간 동안 열처리 후 소수성 박막으로 변형되었으며, FEP 나노입자를 이용하여 제작된 폴리이미드 필름 기반 미세유체 디바이스는 최대 2250 psi의 압력을 견디는 것을 확인하였다. 마지막으로 기존의 포토리소그래피로 제작하기 어려운 16개의 마이크로 반응기로 구성된 3차원 다층 미세유체 디바이스를 FEP가 코팅된 9개의 폴리이미드 필름을 간단한 1단계 정렬로 성공적으로 구현하였다. 개발된 3차원 다층 미세유체 디바이스는 화학 및 생물학의 다양한 응용을 위한 고속대량 스크리닝, 대량 생산, 병렬화 및 대규모 미세유체 통합과 같은 강력한 도구가 될 가능성이 있습니다.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.421-427
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• 2009

We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.

• 한국수산과학회지
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• 제34권3호
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• pp.254-259
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• 2001

프레임에 그물감을 부착하여 구성되는 우리형 구조물의 유수저항을 설계 도면으로부터 정확하게 산정하기 위한 기초 단계로 해서, 4가지 규격의 나일론 랏쉘 그물감과 2가지 규격의 PE 막매듭 그물감에 대해 회류 수조에서 수리 실험을 실시하고 저항 특성을 조사하였다. 또한 일정 기간 해중에 침지되어 생물이 부착한 그물감에 대해 저항을 측정한 기존의 실험 결과를 사용하여 그것의 저항계수를 구하고 생물이 부착되지 않은 그물감의 저항계수와 비교하였다. 실험에서 얻어진 결과를 요약하면 다음과 같다. 1. 벽 면적이 S되는 그물감이 유속 U에서 받는 저항 R을 $R=kSU^2$으로 표시할 경우 저항계수 $k(kg{\cdot}s^2/m^4)$는 $R_e$에 따라 크게 달라지는데, $R_e$의 대표 치수로서 그물코의 면적에 대한 발의 체적의 비 $\lambda,$ 즉$$\lambda=\frac{{\pi}d^2}{2L\;sin\;2{\phi}}$$을 사용하면 (d: 그물실의 지름, L: 발의 길이, $2{\phi}$: 그물코의 전개각), k는 $R_{e}<180$의 영역에서는$$k=350(\frac{{\lambda}U}{v})^{-0.25}$$으로 주어졌고, $R_e{\geq}180$의 영역에서는 큰 변화 없이 $92\~102(kg{\cdot}s^2/m^4$) 범위의 값을 취하였다. 2. 실험에 사용한 그물감들에 대해 벽 면적 S에 대한 투영 면적 $S_n$의 비인 $S_n/S$를 계산하고, 그것을 저항계수 k와 비교한 결과 $$k=98.6(\frac{S_n}{S})^{1.19}$$이 얻어 졌다. 3. 해중에 30일간 침지하여 생물이 부착된 상태의 평면 그물감에 대한 k와 $S_n$와의 관계는 $$k=176(\frac{S_n}{S})^{1.65}$$으로 주어 졌다. 4. 그물감의 유수저항은 방오 도료를 도장하지 않은 그물감보다 도장한 그물감에서 약간 더 큰 경향이었으나, 그 차이는 무시해도 좋을 정도로 작았다.