• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.179-180
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• 2012

Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.206-207
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• 2002

전기도금방식으로 구현된 자기박막 재료로서 CoPtP 박막은 이제까지 보고된 재료 중 가장 높은 보자력 (H$_{c}$ > 5 kOe)과 뛰어난 각형비 (S＊≒0.7)를 가지고 있는 3원계 합금 박막재료이며[1], 차세대 고밀도 자기저장매체로서 [2] 각광받고 있다. 하지만 이제까지 보고된 연구결과는 CoPtP 박막을 전기도금방식으로 제작했을 때, 두께가 약 1$\mu\textrm{m}$ 이상일 경우, 결정립이 큰 칼럼구조(columnar structure)가 성장하여 보자력이 현저히 떨어지는 현상[3]을 보여왔으며, 이러한 이유 때문에 MEMS 등에 응용되는데 많은 제약을 받아왔다. (중략)

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.27-31
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• 2007

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.41-41
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• 1998

Rare earth metal films have been used as a buffer layer for growing ferroelectric t thin film or a seed layer for magnetic multilayer. But when it was deposited on s semiconductor substrates for the application of magneto-optic (MO) storage media, it i is difficult to exactly measure magnetic cons떠nts due to shunting current, and so it n needs to grow metal films on insulator substrate to reduce such effect. Recently, it w was reported that ultra-thin Pt layer were epitaxially grown on A12O:J by ion beam s sputtering in 비떠 high vacuum and it can be used as a seed layer for the growth of C Co-contained magnetic multilayer. In this stu$\phi$, Pt thin film were epi떠xially grown on AI2D3 ($\alpha$)OJ) by RF magnetron s sputtering. The crystalline structure was analyzed by transmission electron microscope ( (TEM) and Rutherford Back Scattering (RBS)/Ion Channeling. In TEM study, Pt was b believed to be twinned on AI잉3($\alpha$)01) su$\pi$ace about Pt(ll1) plane.Moreover, RBS c channeling spectra showed that minimum scattering yield of Pt(111)/AI2O:J(1$\alpha$)OJ) was 4 4% and Pt(11J)/AI2D3($\alpha$)OJ) had 3-fold symmetry.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.68-71
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• 2006

Multi-component $ZnO-In_2O_3-SnO_2$ thin films have been prepared by RF magnetron co-sputtering using targets composed of $In_3Sn_4O_{12}$(99.99%) [1] and ZnO(99.99%) at room temperature. $In_3Sn_4O_{12}$ contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / (RFI + RF2)] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied $0{\sim}100W$ respectively. The thickness of the films was $350{\sim}650nm$. The composit ion concentrations of the each film were measured with EPMA, AES and XPS. The low resistivity of $1-2\;{\times}\;10^3$ and an average transmittance above 80% in the visible range were attained for the films over a range of ${\delta}\;(0.3\;{\leq}\;{\delta}\;{\leq}\;0.5)$. The films also showed a high chemical stability with time and a good uniformity.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.5-9
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• 2007

Phase transition and dopant redistribution during silicidation of $CoSi_2$ thin films were characterized depending on their preparation methods. Our results indicated that cleanness of the substrate surface played an important role in the formation of the final phase. This effect was found to be reduced by addition of W resulting in the formation of $CoSi_2$. However, even in this case, the formation of the final phase was achieved at the cost of extra thermal energy, which induced rough interface between the substrate and the silicide film. As for the dopant redistribution, the deposition sequence of Co and Si on SiGe was observed to induce significant differences in the dopant profiles. It was found that co-deposition of Co and Si resulted in the least redistribution of dopants thus maintaining the original dopant profile.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.242-247
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• 2000

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3(PNZST)$ thin films were deposited by RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3(LSCO)/Pt/Ti/SiO_2/Si$ substrate using a PNZST target with excess PbO of 10 mole%. The thin films deposited at substrate temperature of $500^{\circ}C$, and at RF power of 80W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at $650^{\circ}C$ for 10 seconds in air exhibited the good structures and electrical properties. The fabricated PNZST capacitor had a remanent polarization value of about $20\;{\mu}C/cm^2$ and coercive field of about 50 kV/cm. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Journal of Magnetics
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• v.11 no.2
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• pp.70-73
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• 2006

The magnetization angle and thickness dependence of magnetic anisotropy in the exchange-biased [Pd/Co]${\times}$5/FeMn multilayers with an out-of-plane anisotropy were investigated to determine the origin of perpendicular exchange biasing. As the Co thickness increased to 1.5 nm in the [Pd(0.8 nm)/Co(t)]${\times}$5/FeMn(120 nm) films, the hysteresis loops were converted from square loops at a thin Co (<0.4 nm) to complicated round ones at a thick Co. The irregularly asymmetric step (IAS) at the left top of the loop appeared in the loop of the 0.6-nm Co film due to an inhomogeneity in the exchange anisotropy. As the Pd thickness increased to 1.6 nm, the step disappeared, and the perpendicular magnetic anisotropy was maximized in the Co thickness between 0.6 and 0.9 nm. The conversion of the magnetization loop along the magnetization angle coincided with the equation $H_{(eff)}=H_o\;cos{\theta}$. The IAS of the 0.8-nm Pd film disappeared after thermal annealing up to $200^{\circ}C$ under an external magnetic field.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.187.1-187.1
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• 2007