• Korean Journal of Materials Research
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• v.8 no.2
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• pp.165-172
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• 1998

Epitaxial ultrathin films of $CoSi_2$ and double heteroepitaxial structure of Si/$CoSi_2$/Si(lll) were prepared on Si(111)-$7\times{7}$ substrate by in situ solid-phase epitaxy in a ultrahigh vacuum(LHV). The phase, chemical composition, crystallinity, and the microsructure of the Si/$CoSi_2$/Si(lll) interface were investigated by 2-MeV $^4He^{++}$ ion backscattering spectrometry, X-ray diffraction, and high-resolution transmission electron microscopy. The growth mode of the Co film was the Stransky-Krastanov type with texture when the substrate temperature was room temperature. A-type $CoSi_2$ ultrathin film was grown by deposition of about 50A Co on Si(ll1)-$7\times{7}$ substrate followed by in situ annealing at $700^{\circ}C$ for 10 min. The matching face relationships were $CoSi_2$[110]//Si[110] and $CoSi_2$(002)//Si(002) with no misorientation angle. The A-type $CoSi_2$/Si(lll) interface was abrupt and coherent. The best epi-Si/epi-$CoSi_2$2(A-type)/Si(lll) structure was obtained by deposition of Si film on the CoSii at $500^{\circ}C$ followed by in situ annealing at $700^{\circ}C$ for 10 min in UHV.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.301-311
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• 1994

The growth of amorphous and first crystalline phase, and phase sequence by solid state reaction were examined in Co/Si multilayer thin films by DSC and XRD. The experimental results were compared with the results expected by effective driving force models, PDF and effective heat of formation models.Amorphous phase growth was not observed in Co/Si system and it was consistent with the predicted result by effective driving force. It was observed that the first crystalline phase is CoSi. According to the PDF and effective heat of formation models, the first crystalline phases were CoSi and $CO_2Si$, respectively. The experiemental results were coincident with the PDF model considering structure factors. In case of the atomic concentration ratios of 2Co : 1Si and 1Co : 2Si, the phases sequences were $CoSi\to Co_2Si$ and $CoSi \to Co_2Si \to CoSi \to CoSi_2$, respectively and it was analysized through the effective heat of formation model. The formations of CoSi, $CO_2Si$ and $COSi_2$ in initial stage were controlled by nucleation and the activation energies for the nucleation of three phases were 1.71, 2.34 and 2.79eV.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.738-741
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• 2000

Univorm epitaxial $CoSi_2$layers have been grown in situ on a (100) Si substrate at temperatures near$ 600^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, (Co(η(sup)5-C(sub)5H(sub)5) ($CO_2$). The growth kinetics of an epitaxial $CoSi_2$layer on al Si(100) substrate was investigated at temperatures ranging from 575 to $650^{\circ}C$. In initial deposition stage, plate-like discrete $CoSi_2$spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete $CoSi_2$plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial $CoSi_2$growth on (100) Si, the activation energy of the parabolic growth was found to be 2.82 eV. The growth rate seems to be controlled by the diffusion of Co through the $CoSi_2$layer.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.30-36
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• 2006

A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.13-17
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• 2007

Effect of Co substitution on crystal structures of two nickel silicides, NiSi and $NiSi_2$, is investigated by using an ab initio calculation. Relaxed NiSi and $NiSi_2$ structures are calculated and the calculated lattice parameters are in good agreement with experimentally determined lattice parameters within about 2%. A Co atom substitutes a Ni and Si site, respectively, to evaluate the preferable site between them. Co prefers Ni site to Si site in both NiSi and $NiSi_2$. The calculated total energy also indicates that the Co substitution to Ni site stabilizes both the NiSi and $NiSi_2$ structures. Co also prefers Ni site in $NiSi_2$ to that in NiSi, indicating that $NiSi_2$ becomes more stable than NiSi with Co substitution. As Co addition to NiSi improves its thermal stability experimentally, this indicates that the energy barrier between the two phases is high enough to prevent the phase transformation from NiSi to $NiSi_2$ up to high temperature.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.1012-1018
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• 1996

To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.439-454
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• 1993

The phase sequence of codeposited Co-Si alloy and Co/si multilayer thin film was investigated by differential scanning calormetry(DSC) and X-ray diffraction (XRD) analysis, The phase sequence in codeposition and codeposited amorphous Co-Si alloy thin film were CoSilongrightarrow Co2Si and those in Co/Si multilayer thin film were CoSilongrightarrowCo2Silongrightarrow and CoSilongrightarrowCo2Si longrightarrowCoSilongrightarrowCoSi2 with the atomic concentration ration of Co to Si layer being 2:1 and 1:2 respectively. The observed phase sequence was analyzed by the effectvie heat of formatin . The phase determining factor (PDF) considering structural facotr in addition to the effectvie heat of formation was used to explain the difference in the first crystalline phase between codeposition, codeposited amorphous Co-Si alloy thin film and Co/Si multilayer thin film. The crystallinity of Co-silicide deposited by multitarget bias cosputter deposition (MBCD) wasinvestigated as a funcion of deposition temperature and substrate bias voltage by transmission electron microscopy (TEM) and epitaxial CoSi2 layer was grown at $200^{\circ}C$ . Parameters, Ear, $\alpha$(As), were calculate dto quantitatively explain the low temperature epitaxial grpwth of CoSi2 layer. The phase sequence and crystallinity had a stronger dependence on the substrate bias voltage than on the deposition temperature due to the collisional daxcade mixing, in-situ cleannin g, and increase in the number of nucleation sites by ion bombardment of growing surface.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.