• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5B
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• pp.985-991
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• 2000

In this paper, the optimum structure of 2GHz magnetic thin film planar inductor were designed and fabricated to reduce the inductor area and to maximize the inductance L and quality factor Q of the inductor. The optimum design was performed utilizing Co90Fe10 layer multilayered with SiO2 layers to avoid the eddy-current skin effect and considering new lumped element model. New magnetic thin film inductors operating at 2GHz were fabricated on a Si substrate utilizing photo-lithography and lift-off techniques. The frequency characteristics of L, Q, and impedance in more than fifty identical inductors were measured using an RF Impedance Analyzer(HP4291B with HP16193A test fixture). The self-resonant frequencies(SRF) of the inductors were measured by a Vector Network Analyzer(HP8510). The developed inductors have SRF of 1.8 to 2.3GHz, L of 47 to 68nH, and Q of 70 to 80 near 1GHz. Finally, high frequency, high performance, planar micro-inductor(area=30.8 x 30.8il$^2$) with maximized L and Q were fabricated succefully.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.110-110
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• 2015

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.146-147
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• 2010

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.129-129
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• 2014

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.193-197
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• 2003

To materialize the magnetoelastic devices, such as a highly functional sensor and a signal processing device, using the Fe base amorphous film which has both excellent soft magnetic and magnetostrictive properties, in this study, a new method to control the magnetic anisotropy of a highly magnetostrictive film using bias stress has been proposed and tested. The film pattern, which was stressed by its substrate bending, was subjected to annealing for relieving its stress. Successively, the compressive stress occurred by flattening the substrate was formed in the pattern. With the introduction of the residual compressive stress, the magnetization of the film pattern was aligned in the transverse direction through magnetoelasic coupling. The magnetic domain structure and magnetization curve of the film pattern of which magnetic anisotropy was controlled by the proposed method were presented to verify the availability of the method.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.87-88
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.122-123
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• 2014

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.72-73
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• 2012

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.413-417
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• 1998

In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.83-87
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• 2011

We have analyzed the torque signals measured in synthetic antiferromagnetic (SAF) coupled CoFeB/Ru/CoFeB thin film, which signals were drastically changed at flopping field ($H_F$) and saturation field ($H_s$). The minimum value of negative uniaxial anisotropy constant ($-\;K_1$) was appeared at HF. The $-\;K_1$ was due to the zero net magnetization by the antiferromagnetic coupling between two ferromagnetic layers. Whereas, the biaxial anisotropy constant (K2) was induced in the field range of $H_F$ < H < $H_s$. The induced $K_2$ was originated from deviation angles between magnetization directions of two ferromagnetic layers. And at H > $H_s$, intrinsic uniaxial anisotropy constant of CoFeB layer was observed. These change of the anisotropy constant with magnetic field was explained by the magnetization process of two ferromagnetic layers based on Stoner-Wohlfarth model calculation for SAF thin film.