• Title/Summary/Keyword: CoFeB/MgO

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Compositional Change of MgO Barrier and Interface in CoFeB/MgO/CoFeB Tunnel Junction after Annealing

  • Bae, J.Y.;Lim, W.C.;Kim, H.J.;Kim, D.J.;Kim, K.W.;Kim, T.W.;Lee, T.D.
    • Journal of Magnetics
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    • v.11 no.1
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    • pp.25-29
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    • 2006
  • Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces

  • Song, Kyung Mee;Kim, Dong-Ok;Kim, Jae-Sung;Lee, Dong Ryeol;Choi, Jun Woo
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1212-1217
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    • 2018
  • The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of -12.7 fJ/Vm and -8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.

Effects of Sputtering Conditions on the Growth of Ag/CoFeB Layer on MgO(100) Substrate (MgO(100) 기판 위에 증착된 Ag/CoFeB 박막의 스퍼터링 조건에 따른 미세성장구조 변화 연구)

  • Jeon, Bo-Geon;Jeong, Jong-Ryul;Takahashi, Hirokazu;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of the Korean Magnetics Society
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    • v.21 no.6
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    • pp.214-218
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    • 2011
  • In this study, we have systematically investigated the effect of sputtering conditions on the microstructural properties of Ag/CoFeB thin film on MgO substrate. It was found that the crystallinity and surface roughness of the Ag film strongly depends on the Ar sputtering pressure and sputtering power. Epitaxial growth of Ag(100) film on MgO(100) substrate was achieved under the sputtering conditions of high sputtering power and elevated temperature. XRR (X-ray reflectivity) and high-resolution TEM (transmission electron microscopy) measurements also revealed the interfacial roughening in the Ag/CoFeB interface due to the island structure formation and intermixing between Ag and CoFeB.

Microstructural and Magnetic Properties of CoFeB/MgO/CoFeB Based Magnetic Tunnel Junction Depending on Capping Layer Materials (Capping층 재료에 따른 CoFeB/MgO/CoFeB 자기터널접합의 미세구조와 자기저항 특성)

  • Chung, Ha-Chang;Lee, Seong-Rae
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.162-165
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    • 2007
  • We investigated the effects of the capping layer materials on the crystallization of the amorphous top-CoFeB (t-CoFeB) electrode and the magnetoresistance properties of the magnetic tunnel junctions (MTJs). When the hcp(002)-textured Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe(110). The CoFe(110)/Ru(002) texture relation can be minimized the lattice mismatch down to 5.6%. However, when the fine polycrystalline but almost amorphous TiAl or amorphous ZrAl were used, the amorphous t-CoFeB was crystallized to bcc-CoFe(002). When the amorphous capping materials were used, the evolution of the t-CoFeB texture was affected mainly by the MgO(001) texture. Consequently, the M ratios of the annealed MTJ capped with the ZrAl and TiAl (72.7 and 71.8%) are relatively higher than that of the MTJ with Ru capping layer (46.7%). In conclusions, the texture evolution of the amorphous t-CoFeB during the post deposition annealing could be controlled by the crystallinity of the adjacent capping layer and in turn, it affects the TMR ratio of MTJs.

Thermal Annealing Effect on Ferromagnetic Resonance Properties in CoFeB/MgO Thin Film (CoFeB/MgO 박막 재료의 열처리에 따른 강자성공명 특성)

  • Yoon, Seok-Soo;Kim, Dong-Young
    • Journal of the Korean Magnetics Society
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    • v.21 no.1
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    • pp.10-14
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    • 2011
  • We have measured the ferromagnetic resonance (FMR) signal in as deposited and $400^{\circ}C$ annealed CoFeB/MgO thin film to investigate the annealing effect on magnetic anisotropies and FMR linewidth (${\Delta}H_{PP}$). The uniaxial anisotropy field ($H_{K1}$) was only observed in the as deposited sample. Whereas, in the $400^{\circ}C$ annealed sample, the biaxial anisotropy field ($H_{K2}$) was additionally observed in accompany with uniaxial anisotropy field ($H_{K1}$). The appearance of biaxial anisotropy fields was originated from the crystalline growth of bcc CoFeB(001) from the MgO(001) interface and by the B diffusion during thermal annealing. Also, the ${\Delta}H_{PP}$ of $400^{\circ}C$ annealed sample was increased compared with that of as deposited sample, which was due to the broad distribution of the magnetization axis by the biaxial anisotropy.

THE ELECTROMAGNETIC PROPERTIES OF Mg-Mn FERRITES

  • Lee, D.Y.;Cho, S.I.;Shon, H.J.;Hur, W.D.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.552-555
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    • 1995
  • The magnetic properties of Mg-Mn ferrites were investigated in the composition range of $Mg_{a}Mn_{b}Fe_{c}O_{4\pm\delta}$ (a+b+c=3) with the addition of $Al_{2}O_{3}$. In $MgO-MnO-Fe_{2}O_{3}$ ternary system, the spinel single phase existed within the composition range of MgO-50 mol%, MnO-70 mol% and $Fe_{2}O_{3}-60\;mol%$. The saturation magnetic flux density increased with the increase of $Fe_{2}O_{3}$ content and showed the maximum at the stoichiometric composition of $(Mg,Mn)Fe_{2}O_{4}$. In $Mg_{x}Mn_{1-x}Fe_{2}O_{4}(x=0.2~0.8)$ system, the saturation magnetic flux density showed the maximum at $Mg_{0.2}Mn_{0.8}Fe_{2}O_{4}$. The addition of $Al_{2}O_{3}$ resulted in the decrease of saturation magnetic flux density but increased the electrical resistivity.

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Composition Dependence of Perpendicular Magnetic Anisotropy in Ta/CoxFe80-xB20/MgO/Ta (x=0, 10, 60) Multilayers

  • Lam, D.D.;Bonell, F.;Miwa, S.;Shiota, Y.;Yakushiji, K.;Kubota, H.;Nozaki, T.;Fukushima, A.;Yuasa, S.;Suzuki, Y.
    • Journal of Magnetics
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    • v.18 no.1
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    • pp.5-8
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    • 2013
  • The perpendicular magnetic anisotropy of sputtered CoFeB thin films covered by MgO was investigated by vibrating sample magnetometry. Three different $Co_xFe_{80-x}B_{20}$ alloys were studied. Under out-of plane magnetic field, the saturation field was found to increase with increasing the Co content. The magnetization and interface anisotropy energy were obtained for all samples. Both showed a marked dependence on the MgO overlayer thickness. In addition, their variations were found to be non-monotonous as a function of the Co concentration.

Improvement of Magnetic Transport Properties in Bottom-Type Pinning MgO Magnetic Tunnel Junctions with NiFeSiB/CoFeB Hybrid Free Layer (NiFeSiB / CoFeB 하이브리드 자유층을 사용한 자기터널접합구조에서 Bottom-Type Pinnning MgO 터널 배리어 두께변화에 따른 자기 저항비 증진 연구)

  • Kim, Do-Hyeong;Jo, Ji-Ung;Kim, Do-Gyun;Tan, Reasmey;Isogami, Shinji;Tsunoda, Masakiyo;Takahashi, Migaku;Kim, Yeong-Geun
    • Proceedings of the Korean Magnestics Society Conference
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    • 2009.05a
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    • pp.121-122
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    • 2009
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