• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.12a
• /
• pp.146-146
• /
• 2003

• Proceedings of the Korean Magnestics Society Conference
• /
• 1994.03a
• /
• pp.92-93
• /
• 1994

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.726-729
• /
• 1995

We investigated the effects of Sm on the microstructure and magnetic properties of Fe-Co Alloy films prepared by a DC triode sputtering. The magnetostriction was found to be changed with the Sm content from positive to negative values, taking a zero magnetostriction was at about 3 at% Sm. The Sm content dependence of magnetostriction was explained by the formation of Sm enriched amorphous phase surrounding the main bcc (Fe,Co) crystalline phase, which was observed by a high resolution transmission electron microscopy.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.829-833
• /
• 1996

Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.3
• /
• pp.35-38
• /
• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.675-675
• /
• 2013

CIGS thin films have received a great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films have been deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. In this study, Cu(In,Ga)Se2(CIGS) thin films were prepared using a single quaternary target by rf magnetron sputtering. The effect of sulfurization on the structural, compositional and electrical properties of the films was examined in order to develop the deposition process. An optimal sulfurization process will be selected for the preparation of CIGS thin films with good structural, optical and electrical properties by applying various sulfurization processes. In addition, the electrical properties of CIGS thin films were investigated by post-deposition annealing process. The carrier concentration of CIG(SSe) thin films after sulfurization was increased from $10^{14}cm^{-3}$ to $10^{16}cm^{-3}$ and the resistivity was increased from 10 ${\Omega}cm$ to $10^3$ ${\Omega}cm$. It is confirmed that CIG(SSe) thin films prepared at optimal deposition condition have similar atomic ratio to the target value after sulfurization.

• Journal of the Semiconductor & Display Technology
• /
• v.7 no.1
• /
• pp.29-34
• /
• 2008

In this paper, the DE(double erosion) cathode for the reactive magnetron sputtering system is developed for high deposition rate and high target utilization efficiency. The utilization efficiency of the developed DE cathode is 22% higher than that of normal SE(single erosion) cathode. Sputtering process for the nickel oxide thin films with the DE cathode is performed under the following conditions; power with $1kW{\sim}3kW$, pressure with 4mtorr and 8mtorr, oxygen flow ratio with $0%{\sim}80%$. As a result, the hysteresis phenomenon of discharge voltage in 4mtorr is lower than that in 8mtorr and the hysteresis phenomenon of discharge voltage is getting lower as the applied power is getting higher. The structure of cross section and surface roughness of the thin films are observed by FE-SEM and AFM. The structure of cross section of the thin films is columnar and the average surface roughness under oxygen flow ratio of 0%, 52.5% and 65.0% are $2.08{\AA}$, $2.20{\AA}$ and $0.854{\AA}$, respectively.

• Corrosion Science and Technology
• /
• v.9 no.6
• /
• pp.289-293
• /
• 2010

To investigate the corrosion behavior of tools steel surface in various coating film, the surface of hard coated Ti-Zr-N film on the tool steel by using magnetron-sputtering methods was researched using various experimental methods. STD 61 steels were manufactured by using vacuum furnace and solutionized for 1hr at $1050^{\circ}C$. Steel surface was coated with Ti-Zr-N film at $150^{\circ}C$ and 100W for 1h by using DC-sputtering equipment. Surface characteristics of Ti-Zr-N film coated specimens were investigated by OM, XRD, FE-SEM and nano-scratch tester. And corrosion behaviors of the coated specimen were investigated by polarization test and electrochemical impedance spectroscopy(EG&G Co, PARSTAT 2273. USA). It was found that Ti-Zr-N film coated sample had a thick coated layer and showed a good wear resistance and corrosion resistance of surface compared with ZrN and TiN coated sample. The corrosion resistance and mechanical property of Ti-Zr-N film coated STD 61 alloy increased as sputtering time increased.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.12
• /
• pp.607-613
• /
• 2001

Molybdenum thin films were deposited on the soda lime glass(SLG) substrates by direct-current planar magnetron sputtering, with a sputtering power density of $4.44W/cm^2$. The working pressure was varied from 0.5 mtorr to 20 mtorr to gain a better understanding of the effect of sputtering pressure on the morphology and microstructure of the Mo film. Thin films of $CU(InGa)Se_2$ (CIGS) were deposited on the Mo-coated glass by three stage co-evaporation process. The highest efficiency device was obtained at the maximum value of the tensive stress. The morphology of Mo-coated films were examined by using scanning electron microscopy The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the residual intrinsic stress were examined by X-ray diffraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04a
• /
• pp.39-42
• /
• 2004

The $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the sputtering method was compared with the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the evaporation method. In doing the ultra-low deposition because each element can exist on the substrate surface, both the sputtering method and the evaporation method could easily fabricate single phase of the Bi2212 phase. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.